公开(公告)号：US09647426B1

公开(公告)日：2017-05-09

申请号：US14318468

申请日：2014-06-27

Applicant: Aurrion, Inc.

Inventor： Gregory Alan Fish ,  Erik Johan Norberg ,  John M. Garcia ,  Robert Silvio Guzzon ,  Daniel Knight Sparacin

IPC: H04B10/00 ,  H01S5/50 ,  G02B27/28 ,  H04J14/06 ,  H04J14/02

CPC classification number: H01S5/5018 ,  G02B27/283 ,  G02B27/286 ,  H01S5/005 ,  H01S5/5009 ,  H04J14/02 ,  H04J14/06

Abstract: Embodiments of the invention describe polarization insensitive optical devices utilizing polarization sensitive components. Light comprising at least one polarization state is received, and embodiments of the invention select a first optical path for light comprising a first polarization state or a second optical path for light comprising a second polarization state orthogonal to the first polarization state. The optical paths include components to at least amplify and/or modulate light comprising the first polarization state; the second optical path includes a polarization rotator to rotate light comprising the second polarization state to the first polarization state. Embodiments of the invention further describe optical devices including a polarization mode converter to convert light comprising a first and a second polarization state to light comprising different spatial modes of the first polarization state; light comprising the different spatial modes of the first polarization state is subsequently amplified and modulated.

公开(公告)号：US20130279910A1

公开(公告)日：2013-10-24

申请号：US13449515

申请日：2012-04-18

Applicant: Mehrdad Ziari ,  Scott Corzine ,  Masaki Kato ,  Michael Francis Van Leeuwen ,  Radhakrishnan L. Nagarajan ,  Matthew L. Mitchell ,  Fred A. Kish, JR.

Inventor： Mehrdad Ziari ,  Scott Corzine ,  Masaki Kato ,  Michael Francis Van Leeuwen ,  Radhakrishnan L. Nagarajan ,  Matthew L. Mitchell ,  Fred A. Kish, JR.

IPC: H01S5/06 ,  H04J14/02

CPC classification number: H04B10/2914 ,  H01S5/4087 ,  H01S5/5009 ,  H01S5/5036 ,  H01S5/5045 ,  H04J14/02 ,  H04J14/0221 ,  H04J14/06

Abstract: A semiconductor optical amplifier module may include a beam splitter to split an optical signal into two polarization optical signals including a first polarization optical signal with a Transverse Magnetic (TM) polarization provided along a first path of two paths, and a second polarization optical signal with a Transverse Electric (TE) polarization provided along a second path of the two paths; a first rotator to rotate the TM polarization of the first polarization optical signal to TE polarization; a first semiconductor optical amplifier to amplify the rotated first polarization optical signal to output a first resultant optical signal; a second semiconductor optical amplifier to amplify the second polarization optical signal; and a second rotator to rotate the polarization of the amplified second polarization optical signal to output a second resultant optical signal; and a beam combiner to combine the first resultant optical signal and the second resultant optical signal.

Abstract translation: 半导体光放大器模块可以包括光束分离器，以将光信号分成两个偏振光信号，包括具有沿着两条路径的第一路径提供的横向磁（TM）偏振的第一偏振光信号，以及第二偏振光信号， 沿着两个路径的第二路径提供的横向电（TE）极化; 第一旋转器，用于将第一偏振光信号的TM偏振旋转为TE极化; 第一半导体光放大器，用于放大旋转的第一偏振光信号以输出第一合成光信号; 第二半导体光放大器，用于放大第二偏振光信号; 以及第二旋转器，用于旋转放大的第二偏振光信号的偏振，以输出第二合成光信号; 以及光束组合器，以组合第一合成光信号和第二合成光信号。

公开(公告)号：US08363309B2

公开(公告)日：2013-01-29

申请号：US12814686

申请日：2010-06-14

Applicant: Tomoaki Takeyama

Inventor： Tomoaki Takeyama

IPC: H04B10/17 ,  H01S3/067

CPC classification number: H01S3/06754 ,  B82Y20/00 ,  G02F1/0311 ,  G02F1/116 ,  G02F1/1335 ,  G02F1/133528 ,  G02F1/133533 ,  G02F1/133536 ,  G02F1/13362 ,  G02F1/133788 ,  G02F2001/0139 ,  G02F2001/133531 ,  G02F2001/133538 ,  G02F2203/06 ,  G02F2203/07 ,  H01S3/06712 ,  H01S3/06758 ,  H01S3/08036 ,  H01S3/08054 ,  H01S3/094015 ,  H01S3/094023 ,  H01S3/094073 ,  H01S3/10 ,  H01S3/10061 ,  H01S3/1308 ,  H01S5/06236 ,  H01S5/06821 ,  H01S5/18355 ,  H01S5/3201 ,  H01S5/3403 ,  H01S5/3404 ,  H01S5/4012 ,  H01S5/5009 ,  H01S5/5036 ,  H01S2301/14 ,  H01S2301/145

Abstract: An apparatus includes a first optical amplifier that uses a rare-earth-doped optical medium, an isolator that inputs amplified light amplified by the first optical amplifier, a second optical amplifier that uses a rare-earth-doped optical medium to amplify a light output from the isolator, and a first light router that routes amplified spontaneous emission light generated by the first optical amplifier or the second optical amplifier to input, by a second light router, the routed amplified spontaneous emission light to the optical rare-earth-doped medium other than the optical rare-earth-doped medium where the routed amplified spontaneous emission light is generated.

Abstract translation: 一种装置包括使用稀土掺杂光介质的第一光放大器，输入由第一光放大器放大的放大光的隔离器，使用稀土掺杂光介质放大光输出的第二光放大器 以及第一光路由器，其路由由第一光放大器或第二光放大器产生的放大的自发发射光，由第二光路由器将路由放大的自发发射光输入到光稀土掺杂介质 除了产生路线放大的自发发射光的光稀土掺杂介质之外。

公开(公告)号：US07158291B2

公开(公告)日：2007-01-02

申请号：US10767651

申请日：2004-01-29

Applicant: Simarjeet S. Saini ,  Peter J. S. Heim ,  Scott A. Merritt ,  Mario Dagenais

Inventor： Simarjeet S. Saini ,  Peter J. S. Heim ,  Scott A. Merritt ,  Mario Dagenais

IPC: H01S4/00 ,  H04B10/12

CPC classification number: H01S5/5009 ,  H01S5/2231 ,  H01S5/3211

Abstract: A semiconductor optical amplifier (SOA) has an overall gain that is substantially polarization independent, i.e., less than 1 dB difference between transverse electric (TE) and transverse magnetic (TM) gain. The SOA includes a residual cladding layer having different thicknesses over different portions of the gain section. Over a first portion of the gain section, the residual cladding layer is thinner than over a second portion of the gain section. This results in the first portion providing more gain to optical energy having a TE polarization state than optical energy having a TM polarization state. In the second portion of the gain section, however, more gain is provided to optical energy having a TM polarization state than energy having a TE polarization state. The resulting gain differences can be designed to offset one another so that the output has a gain that is substantially polarization independent.

Abstract translation: 半导体光放大器（SOA）具有基本上偏振无关的总体增益，即横向电（TE）和横向磁（TM）增益之间的差小于1dB。 SOA包括在增益部分的不同部分上具有不同厚度的残余覆层。 在增益部分的第一部分上，残余覆层比增益部分的第二部分薄。 这导致第一部分比具有TM偏振状态的光能提供具有TE极化状态的光能的更多增益。 然而，在增益部分的第二部分中，对具有TM极化状态的光能比具有TE极化状态的能量提供更多的增益。 所产生的增益差异可被设计为彼此偏移，使得输出具有基本上与偏振无关的增益。

公开(公告)号：US07030415B2

公开(公告)日：2006-04-18

申请号：US10473049

申请日：2002-03-27

Applicant: Dong-han Lee

Inventor： Dong-han Lee

IPC: H01L27/15

CPC classification number: B82Y20/00 ,  H01S5/3412 ,  H01S5/5009 ,  H04B10/2914

Abstract: The present invention relates to an optical communication, and more particularly, to a wideband wavelength division multiplexing (WDM) optical communication system which can have a broad amplification band while overcoming a polarization dependency and solving a signal leakage between channels. In an optical amplifier module and optical transmission system for a WDM optical communication system using this, the optical amplifier module uses a semiconductor quantum dot optical amplifier as an amplifying means, and thus has a wide amplification bard and has no a polarization dependency of a gain and a signal leakage between channels, and the optical transmision system uses a semiconductor quantum dot optical amplifier module when several optical amplifier modules are connected for use so that a gain automatically becomes flat and automatically becomes fixed even though a channel number and an input signal size become different. Accordingly, the semiconductor quantum dot optical amplifier module of the present invention can be used as a repeater, an amplifier of a metro WDM system, and an amplifying means for the other systems of a WDM type. The optical transmission system using the semiconductor quantum dot optical amplifier module of the present invention can be used in a long-distance transmission system of a WDM type and a WDM network which pass through the optical amplifier module several times.

Abstract translation: 光通信技术领域本发明涉及一种光通信，更具体地说，涉及宽带波分复用（WDM）光通信系统，该系统可以在克服极化依赖性和解决信道之间的信号泄漏的同时具有宽的放大频带。 在使用这种光放大器模块的WDM光通信系统的光放大器模块和光传输系统中，光放大器模块使用半导体量子点光放大器作为放大装置，因此具有宽的放大ard，并且没有增益的偏振依赖性 并且通道之间的信号泄漏，并且当多个光放大器模块连接使用时，光传输系统使用半导体量子点光放大器模块，使得增益自动变得平坦并且即使通道号和输入信号尺寸自动变得固定 变得不一样 因此，本发明的半导体量子点光放大器模块可以用作中继器，城域WDM系统的放大器和用于WDM类型的其他系统的放大装置。 使用本发明的半导体量子点光放大器模块的光传输系统可以用于通过光放大器模块多次的WDM型和WDM网络的长距离传输系统。

公开(公告)号：US06545801B2

公开(公告)日：2003-04-08

申请号：US09960400

申请日：2001-09-24

Applicant: Ken Morito

Inventor： Ken Morito

IPC: H01S325

CPC classification number: H01S5/5009 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/1085 ,  H01S5/4043

Abstract: A semiconductor optical amplifier includes a plurality of active layers of bulk crystal with at least one intervening spacer for optical amplification, wherein each of the active layers accumulates a tensile strain therein.

公开(公告)号：US5790302A

公开(公告)日：1998-08-04

申请号：US570462

申请日：1995-12-11

Applicant: Lukas F. Tiemeijer

Inventor： Lukas F. Tiemeijer

IPC: H01S5/00 ,  H01S5/028 ,  H01S5/227 ,  H01S5/343 ,  H01S5/50 ,  H01S3/19 ,  H01S3/00

CPC classification number: B82Y20/00 ,  H01S5/028 ,  H01S5/5009 ,  H01S5/2277 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434 ,  H01S5/5045 ,  H01S5/5063

Abstract: A semiconductor diode laser amplifier (100) includes an active layer (4) which is situated between two cladding layers (1A, (3,6)) and in which a strip-shaped active region is present which is bounded in longitudinal direction by two end faces (7,8) which are practically perpendicular to the active region and are provided each with an antireflection layer (71,81). The amplification ripple of such a laser amplifier (100) is comparatively high, in particular when radiation of different wavelengths is present in the laser (100), such as the TE and TM portions of the radiation to be amplified. In a laser amplifier (100), a first end face (7) is provided with a first antireflection layer (71) which has a minimum reflection at a first wavelength, for example that at which the reflection is a minimum for the TE polarized portion of the radiation to be amplified, and the second end face (8) is provided with a second antireflection layer (81) which has a minimum reflection at a second wavelength different from the first, for example that at which the reflection is a minimum for the TM polarized portion of the radiation to be amplified. The product of the reflections is a minimum for both wavelengths as a result of this, at least lower than in the known laser (100) in which both end faces (7,8) are provided with an identical antireflection layer (71,81) which is optimized for an intermediate wavelength. The laser (100) has a particularly low amplification ripple because this ripple is indeed proportional to the square root of said product of reflections. Good results are obtained with antireflection layers (71,81) which include only a single layer, preferably made of silicon oxynitride.

Abstract translation: 半导体二极管激光放大器（100）包括位于两个包层（1A，（3,6）之间）的有源层（4），并且其中存在沿纵向方向限制两个的带状有源区 端面（7,8），其实际上垂直于有源区域并且设置有各自的抗反射层（71,81）。 这种激光放大器（100）的放大纹波相对较高，特别是当激光器（100）中存在不同波长的辐射时，例如要放大的辐射的TE部分和TM部分。 在激光放大器（100）中，第一端面（7）设置有第一抗反射层（71），其在第一波长处具有最小反射，例如对于TE极化部分的反射最小 并且第二端面（8）设置有第二抗反射层（81），该第二防反射层在与第一反射层不同的第二波长处具有最小反射，例如反射最小的反射层 要放大的辐射的TM偏振部分。 由于这个原因，反射的乘积对于两个波长都是最小的，至少比已知的两个端面（7,8）设置有相同的防反射层（71,81）的激光器（100）更低， 其针对中间波长进行了优化。 激光器（100）具有特别低的放大纹波，因为该纹波确实与所述反射乘积的平方根成比例。 使用仅包含单层的防反射层（71,81）获得良好的结果，优选由氮氧化硅制成。

公开(公告)号：US5654814A

公开(公告)日：1997-08-05

申请号：US563356

申请日：1995-11-28

Applicant: Toshihiko Ouchi ,  Takeo Ono ,  Masao Majima

Inventor： Toshihiko Ouchi ,  Takeo Ono ,  Masao Majima

IPC: H01L27/15 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/12 ,  G02B6/124 ,  G02B6/34 ,  G02B6/42 ,  H01L31/10 ,  H01S5/00 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/30 ,  H01S5/34 ,  H01S5/40 ,  H01S5/50 ,  H04B10/07 ,  H04B10/25 ,  H04B10/272 ,  H04B10/278 ,  H04B10/54 ,  H04B10/548 ,  H04B10/564 ,  H04B10/572 ,  H04J14/00 ,  H04J14/02 ,  H04J14/04 ,  H04J14/06 ,  H04B10/00

CPC classification number: H04J14/06 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/124 ,  G02B6/4246 ,  H01S5/5045 ,  H04B10/2572 ,  H04J14/02 ,  H04J14/04 ,  G02B2006/1204 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/06258 ,  H01S5/1003 ,  H01S5/3404 ,  H01S5/4031 ,  H01S5/4068 ,  H01S5/5009

Abstract: An optical semiconductor apparatus having no polarization dependency and an optical communication system using the semiconductor apparatus are provided. In an optical communication system wherein a signal is demultiplexed by using a semiconductor waveguide type filter disposed on a receiver side, two semiconductor lasers disposed on a transmitter side modulate two light signals having different wavelengths using a common modulation signal and transmit the modulated light signals. One of the different wavelengths is accorded, for example, to the TE mode transmission wavelength of the filter, and the other is accorded, for example, to the TM mode transmission wavelength of the filter. On the receiver side, lights at different wavelengths may be branched into two light portions and the branched light portions may be respectively detected by two photodetectors.

Abstract translation: 提供一种没有偏振依赖性的光学半导体装置和使用该半导体装置的光通信系统。 在通过使用设置在接收机侧的半导体波导型滤波器对信号进行解复用的光通信系统中，设置在发送器侧的两个半导体激光器使用公共调制信号来调制具有不同波长的两个光信号并发送调制的光信号。 不同波长之一例如与滤波器的TE模式传输波长相一致，另一个符合例如滤波器的TM模式传输波长。 在接收器侧，不同波长的光可以分支成两个光部分，并且分支光部分可以分别由两个光电检测器检测。

公开(公告)号：US5579155A

公开(公告)日：1996-11-26

申请号：US337271

申请日：1994-11-10

Applicant: Mitsuhiro Kitamura

Inventor： Mitsuhiro Kitamura

IPC: H01S3/10 ,  H01S5/00 ,  H01S5/10 ,  H01S5/227 ,  H01S5/343 ,  H01S5/50 ,  H01S3/19 ,  H01S3/18

CPC classification number: B82Y20/00 ,  H01S5/50 ,  H01S5/1064 ,  H01S5/2272 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/5009

Abstract: A semiconductor optical amplifier having a large gain and a high saturation optical output power has a uniform cross-section of an active layer. In the semiconductor optical amplifier, the band gap wavelength of the active layer in the vicinity of the light-emitting end is shorter than that in the vicinity of the light-receiving end. The active layer may have a multiple quantum well structure, or the active layer may have a tesile-strained (compressively strained) multiple quantum well structure in which the absolute strain quantity in the vicinity of the light-emitting end is larger than that in the vicinity of the light-receiving end.

Abstract translation: 具有大增益和高饱和光输出功率的半导体光放大器具有活性层的均匀横截面。 在半导体光放大器中，发光端附近的有源层的带隙波长比光接收端附近的带隙波长短。 有源层可以具有多量子阱结构，或者有源层可以具有应变（压缩应变）多量子阱结构，其中发光端附近的绝对应变量大于 光接收端附近。

公开(公告)号：US5414549A

公开(公告)日：1995-05-09

申请号：US191180

申请日：1994-02-03

Applicant: Michiyo Nishimura ,  Jun Nitta ,  Kenji Nakamura ,  Masao Majima ,  Toru Nakata

Inventor： Michiyo Nishimura ,  Jun Nitta ,  Kenji Nakamura ,  Masao Majima ,  Toru Nakata

IPC: G02F1/35 ,  B82Y10/00 ,  B82Y20/00 ,  H01L27/15 ,  H01S5/00 ,  H01S5/026 ,  H01S5/32 ,  H01S5/34 ,  H01S5/50 ,  H04B10/27 ,  H04B10/272 ,  H04B10/275 ,  H04B10/278 ,  H04B10/29 ,  H04B10/297 ,  H01S3/19 ,  G02B6/12 ,  H01L33/00

CPC classification number: B82Y20/00 ,  H01S5/026 ,  H01S5/34 ,  H01S5/5009 ,  H04B10/2914 ,  H01S2301/14 ,  H01S5/3203

Abstract: A semiconductor optical amplifying apparatus includes: a substrate; an active layer having a quantum well structure formed on the substrate, the active layer guiding first waveguide mode light and second waveguide mode light having a polarization direction perpendicular to that of the first waveguide mode light and amplifying the first waveguide mode light and the second waveguide mode light, the active layer having quantum wells such that projected quantization axes obtained by projecting quantization axes of the quantum wells thereof on a plane perpendicular to a light waveguide direction are inclined at 45.degree. with respect to vibration directions of electric field vectors of the first waveguide mode light and the second waveguide mode light; and an electrode for supplying a current to the active layer.

Abstract translation: 一种半导体光放大装置，包括：基板; 具有形成在基板上的量子阱结构的有源层，有源层引导第一波导模式光和具有与第一波导模式光垂直的偏振方向的第二波导模式光，并且放大第一波导模式光和第二波导 有源层具有量子阱，使得通过将量子阱的量子轴投影在垂直于光波导方向的平面上而获得的投影量化轴相对于第一像素的电场矢量的振动方向倾斜45度 波导模式光和第二波导模式光; 以及用于向有源层提供电流的电极。