Invention Grant
- Patent Title: Semiconductor optical amplifying apparatus
- Patent Title (中): 半导体光放大装置
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Application No.: US191180Application Date: 1994-02-03
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Publication No.: US5414549APublication Date: 1995-05-09
- Inventor: Michiyo Nishimura , Jun Nitta , Kenji Nakamura , Masao Majima , Toru Nakata
- Applicant: Michiyo Nishimura , Jun Nitta , Kenji Nakamura , Masao Majima , Toru Nakata
- Applicant Address: JPX Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JPX Tokyo
- Priority: JPX2-163665 19900621; JPX3-151023 19910527
- Main IPC: G02F1/35
- IPC: G02F1/35 ; B82Y10/00 ; B82Y20/00 ; H01L27/15 ; H01S5/00 ; H01S5/026 ; H01S5/32 ; H01S5/34 ; H01S5/50 ; H04B10/27 ; H04B10/272 ; H04B10/275 ; H04B10/278 ; H04B10/29 ; H04B10/297 ; H01S3/19 ; G02B6/12 ; H01L33/00
Abstract:
A semiconductor optical amplifying apparatus includes: a substrate; an active layer having a quantum well structure formed on the substrate, the active layer guiding first waveguide mode light and second waveguide mode light having a polarization direction perpendicular to that of the first waveguide mode light and amplifying the first waveguide mode light and the second waveguide mode light, the active layer having quantum wells such that projected quantization axes obtained by projecting quantization axes of the quantum wells thereof on a plane perpendicular to a light waveguide direction are inclined at 45.degree. with respect to vibration directions of electric field vectors of the first waveguide mode light and the second waveguide mode light; and an electrode for supplying a current to the active layer.
Public/Granted literature
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