摘要:
A method of fabricating a photonics stack includes providing a silicon photonics structure having a silicon substrate, an oxide layer, and an epitaxial silicon layer with one or more active devices. The method also includes providing an interposer structure and attaching the silicon photonics structure and the interposer structure. The method further includes removing the silicon substrate from the silicon photonics structure and removing at least a portion of the oxide layer from the silicon photonics structure. In addition, the method includes disposing a thin film lithium niobate coupon on or within the silicon photonics structure and encapsulating the thin film lithium niobate coupon with an optical material.
摘要:
An optical device comprises a photonic integrated circuit having an optical mode coupler. The optical mode coupler optically couples a first planar optical waveguide having a first optical core at one horizontal plane to a second planar optical waveguide having a second optical core at a different second horizontal plane. The optical mode coupler comprises two or more intermediate optical layers stacked vertically between the horizontal planes of the optical cores, and intermediate optical layer comprises one or more optical rails. The optical mode coupler causes light received from the first planar optical waveguide to excite an optical mode and guide the light of the optical mode such that the optical mode substantially overlaps the first planar optical waveguide and the optical rails of at least two of the intermediate optical layers in a vertical cross-section of the photonic integrated circuit.
摘要:
In an integrated optical device, squeezed light is used internally to effectively increase an optical modulation effect. One exemplary device operates by squeezing the light at the input, then sending it through an electro-optic stage where its phase picks up the signal of interest, and finally anti-squeezing it to obtain a displaced coherent state. Thus the displacement is amplified by the level of squeezing that is achieved inside the device and it is thereby less sensitive to loss. Since this device behaves simply as an electro-optic modulator, albeit one with an exponentially enhanced sensitivity, no extra considerations are needed to integrate the modulator into a system. Such devices can be operated as modulators or as sensors, and can make use of optical phase shift effects other than the electro-optic effect.
摘要:
A method of integrating an optoelectronic device comprising a Pockels material, such as lithium niobate (LiNbO3), includes forming an optoelectronic device layer over a semiconductor layer. The optoelectronic device layer includes a patterned optoelectronic device segment in an interlayer dielectric. A window is etched in the interlayer dielectric using the patterned optoelectronic device segment as a sacrificial etch stop. The patterned optoelectronic device segment is removed in the window. The optoelectronic device comprising the Pockels material is formed in place of the removed patterned optoelectronic device segment. The optoelectronic device comprising the Pockels material may be formed from an optoelectronic chiplet.
摘要:
An optical device is described. At least a portion of the optical device includes ferroelectric non-linear optical material(s) and is fabricated utilizing ultraviolet lithography. In some aspects the at least the portion of the optical device is fabricated using deep ultraviolet lithography. In some aspects, the short range root mean square surface roughness of a sidewall of the at least the portion of the optical device is less than ten nanometers. In some aspects, the at least the portion of the optical device has a loss of not more than 2 dB/cm.
摘要:
A highly-efficient ridge waveguide includes a base substrate of a single-crystal and a core substrate made of a nonlinear optical medium, the base substrate and the core substrate being directly bonded, and includes a thin film layer formed on a surface of the core substrate on the upper side of a periodically polarization-reversed structure, and becomes a wavelength conversion element. A direct bonding method through thermal diffusion is applied to bonding. The core substrate has a ridge structure formed in a light propagating direction and a reversed structure formed by processing this. A surface of the core substrate is ground and a thin film layer is formed on the ground surface. A core formed by digging a core layer of the core substrate in an unbonded state is provided on an upper surface of an undercladding layer of the base substrate in a bonded state. Two side surfaces of the core are in contact with an air layer.
摘要:
A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.
摘要:
Novel methods and systems for waveguide fabrication and design are disclosed. Designs are described for fabricating ridge, buried and hybrid waveguides by a femtosecond pulsed laser. A laser system may combine a diode bar, a wavelength combiner and a waveguide. The waveguide may convert the electromagnetic radiation of an infrared laser into that the visible-wavelength range.
摘要:
An optical module includes: a substrate; a first terminal; a plurality of second terminals; a plurality of third terminals; and a plurality of wirings. The plurality of second terminals are on the substrate. The plurality of third terminals are disposed closer to an electrode than the plurality of second terminals on the substrate. The plurality of wirings extend from the plurality of second terminals through a side opposite to the first terminal and reach the electrode.
摘要:
An optical communication device includes two photoelectric conversion devices, and an optical fiber connection between the photoelectric conversion devices. The photoelectric conversion devices include an optical coupling device, a light emitting device, and an optical receiver. The optical coupling device includes a substrate, a top surface, a bottom surface opposite to the top surface, a first waveguide a second waveguide and a grating, the first connecting portion and the second connecting portion are connected with each other at an overlap area and form a Y-shape, the grating is used to reflect transverse electric waves and passes transverse magnetic waves.