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    SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    3.
    发明公开
    SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20230143614A1

    公开(公告)日：2023-05-11

    申请号：US18049706

    申请日：2022-10-26

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： ITARU OSHIYAMA

    IPC分类号： H01L27/146 ,  H01L31/10

    CPC分类号： H01L27/14621 ,  H01L27/14636 ,  H01L31/10

    摘要： The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes: a substrate; a first photoelectric conversion region that is provided in the substrate; a second photoelectric conversion region that is provided in the substrate; a trench that is provided between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate; a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion region; and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region. The technology of the present disclosure can be applied to, for example, a backside illumination solid-state imaging device and the like.

    Avalanche photodiode structure
    5.
    发明授权
    Avalanche photodiode structure 有权

    公开(公告)号：US11508868B2

    公开(公告)日：2022-11-22

    申请号：US16613739

    申请日：2018-05-15

    申请人： ROCKLEY PHOTONICS LIMITED

    发明人： Guomin Yu

    IPC分类号： H01L31/10 ,  H01L31/107 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18 ,  H01L29/66

    摘要： A germanium based avalanche photo-diode device and method of manufacture thereof. The device including: a silicon substrate; a lower doped silicon region, positioned above the substrate; a silicon multiplication region, positioned above the lower doped silicon region; an intermediate doped silicon region, positioned above the silicon multiplication region; an un-doped germanium absorption region, position above the intermediate doped silicon region; an upper doped germanium region, positioned above the un-doped germanium absorption region; and an input silicon waveguide; wherein: the un-doped germanium absorption region and the upper doped germanium region form a germanium waveguide which is coupled to the input waveguide, and the device also includes a first electrode and a second electrode, and the first electrode extends laterally to contact the lower doped silicon region and the second electrode extends laterally to contact the upper doped germanium region.

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11508856B2

    公开(公告)日：2022-11-22

    申请号：US17187369

    申请日：2021-02-26

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    发明人： Koichi Kokubun ,  Mitsuhiro Sengoku

    IPC分类号： H01L31/02 ,  H01L31/10 ,  H01L31/0256 ,  H01L27/144

    摘要： A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.

    Solid-state imaging device and electronic apparatus
    7.
    发明授权
    Solid-state imaging device and electronic apparatus 有权

    公开(公告)号：US11508768B2

    公开(公告)日：2022-11-22

    申请号：US16959709

    申请日：2018-12-28

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Itaru Oshiyama

    IPC分类号： H01L27/146 ,  H01L31/10

    摘要： The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes a substrate, a first photoelectric conversion region in the substrate, a second photoelectric conversion region in the substrate, a trench between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate, a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion regions, and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region. The technology of the present disclosure can be applied to, for example, a backside illumination solid-state imaging device and the like.