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    Light detection device
    1.
    发明授权
    Light detection device 有权

    公开(公告)号：US10224437B2

    公开(公告)日：2019-03-05

    申请号：US15551099

    申请日：2015-12-14

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Shogo Kamakura ,  Ryuta Yamada ,  Kenichi Sato

    IPC: H01L31/02 ,  G01J1/02 ,  H01L31/10 ,  H01L31/107 ,  H04N5/369 ,  G01J1/44 ,  H01L23/00 ,  H01L27/144 ,  H01L31/0203 ,  H01L31/0232

    Abstract: A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole.

    Photodiode array
    4.
    发明授权
    Photodiode array 有权

    公开(公告)号：US10050069B2

    公开(公告)日：2018-08-14

    申请号：US15293784

    申请日：2016-10-14

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Kazuhisa Yamamura ,  Kenichi Sato

    IPC: H01L31/107 ,  H01L27/144 ,  H01L27/14 ,  H01L27/146

    CPC classification number: H01L27/1446 ,  H01L27/14 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14636 ,  H01L31/107

    Abstract: A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p−-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p−-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

    Photodiode array
    6.
    发明授权
    Photodiode array 有权

    公开(公告)号：US10396107B2

    公开(公告)日：2019-08-27

    申请号：US16040709

    申请日：2018-07-20

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Kazuhisa Yamamura ,  Kenichi Sato

    IPC: H01L31/107 ,  H01L27/144 ,  H01L27/14 ,  H01L27/146

    Abstract: A photodiode array 1 has a plurality of photodetector channels 10 which are formed on an n-type substrate 2 having an n-type semiconductor layer 12, with a light to be detected being incident to the plurality of photodetector channels 10. The photodiode array 1 comprises: a p−-type semiconductor layer 13 formed on the n-type semiconductor layer 12 of the substrate 2; resistors 4 each of which is provided to each of the photodetector channels 10 and is connected to a signal conductor 3 at one end thereof; and an n-type separating part 20 formed between the plurality of photodetector channels 10. The p−-type semiconductor layer 13 forms a pn junction at the interface between the substrate 2, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels. The separating part 20 is formed so that each of the multiplication regions AM of the p−-type semiconductor layer 13 corresponds to each of the photodetector channels 10.

    Photodiode array
    7.
    发明授权
    Photodiode array 有权
    光电二极管阵列

    公开(公告)号：US09484366B2

    公开(公告)日：2016-11-01

    申请号：US13774002

    申请日：2013-02-22

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Kazuhisa Yamamura ,  Kenichi Sato

    IPC: H01L31/107 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146

    CPC classification number: H01L27/1446 ,  H01L27/14 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14636 ,  H01L31/107

    Abstract: A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p−-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p−-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

    Abstract translation: 光电二极管阵列具有形成在具有n型半导体层的n型衬底上的多个光电检测器通道，待检测的光入射到光电检测器通道。 阵列包括：衬底的n型半导体层上的p型半导体层; 电阻器被提供到每个光电检测器通道并且在其一端连接到信号导体; 以及在所述多个光电检测器通道之间的n型分离部。 p型半导体层在衬底之间的界面处形成pn结，并且包括用于由待检测的光的入射产生的载流子的雪崩乘法的多个乘法区域，使得每个乘法区域对应于每个 的光电检测器通道。

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