Invention Grant
- Patent Title: Photodiode array
- Patent Title (中): 光电二极管阵列
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Application No.: US13655907Application Date: 2012-10-19
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Publication No.: US08791538B2Publication Date: 2014-07-29
- Inventor: Koei Yamamoto , Terumasa Nagano , Kazuhisa Yamamura , Kenichi Sato , Ryutaro Tsuchiya
- Applicant: Hamamatsu Photonics K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2012-230921 20121018
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L31/00
Abstract:
A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.
Public/Granted literature
- US20140110810A1 PHOTODIODE ARRAY Public/Granted day:2014-04-24
Information query
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