公开(公告)号：US09252056B2

公开(公告)日：2016-02-02

申请号：US14793181

申请日：2015-07-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/304 ,  H01L23/00

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US09142458B2

公开(公告)日：2015-09-22

申请号：US14517552

申请日：2014-10-17

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/768 ,  B23K26/00 ,  B23K26/06 ,  B23K26/40 ,  B28D5/00 ,  H01L21/304 ,  H01L23/00

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US09711405B2

公开(公告)日：2017-07-18

申请号：US14984066

申请日：2015-12-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/768 ,  B23K26/00 ,  B28D5/00 ,  H01L21/304 ,  H01L23/00 ,  B23K26/0622 ,  B23K26/40 ,  H01L21/268 ,  H01L21/683 ,  H01L23/544 ,  H01L21/306 ,  B23K103/00

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US09548246B2

公开(公告)日：2017-01-17

申请号：US15226519

申请日：2016-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L23/00 ,  H01L21/306 ,  H01L21/683

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract translation: 一种衬底分割方法，其可以在防止碎裂的同时对衬底进行薄层化和分裂，并发生裂纹。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，从而形成包含熔融处理区域的改质区域 在半导体衬底1内进行多光子吸收，并且使包含熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

公开(公告)号：US09287177B2

公开(公告)日：2016-03-15

申请号：US14793181

申请日：2015-07-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/304 ,  H01L23/00

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US11101315B2

公开(公告)日：2021-08-24

申请号：US15782114

申请日：2017-10-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Terumasa Nagano ,  Kazuhisa Yamamura ,  Kenichi Sato ,  Ryutaro Tsuchiya

IPC: H01L27/144 ,  H01L27/146 ,  G01T1/24 ,  G01N23/046 ,  G01T1/29 ,  H01L31/0224 ,  H01L31/115

Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

公开(公告)号：US09553023B2

公开(公告)日：2017-01-24

申请号：US15226284

申请日：2016-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/304 ,  H01L21/306

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US08993361B2

公开(公告)日：2015-03-31

申请号：US14012273

申请日：2013-08-28

Applicant: Hamamatsu Photonics K.K.

Inventor： Hiroshi Oguri ,  Yoshitaka Ishikawa ,  Akira Sakamoto ,  Tomoya Taguchi ,  Yoshimaro Fujii

IPC: H01L21/00 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/18 ,  Y02E10/50

Abstract: A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions.

Abstract translation: 边缘照明型光电二极管的制造方法具有：在半导体衬底中的器件形成区域的每一个中形成第一导电类型的杂质掺杂层的工序; 在每个器件形成区域中形成第二导电类型的杂质掺杂层的工艺; 在相邻的器件形成区域的边界的位置处，通过蚀刻从主表面形成在半导体衬底的厚度方向上延伸的沟槽的工艺，以暴露器件形成区域的侧面; 在器件形成区域的露出侧面上形成绝缘膜的工序; 在半导体衬底的主表面侧上形成用于每个对应的杂质掺杂层的电极的工艺; 以及将半导体衬底分离成单个器件形成区域的过程。

公开(公告)号：US11424162B2

公开(公告)日：2022-08-23

申请号：US17202807

申请日：2021-03-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/768 ,  B23K26/53 ,  B28D5/00 ,  B23K26/0622 ,  B23K26/40 ,  H01L21/304 ,  H01L21/268 ,  H01L21/683 ,  H01L23/544 ,  H01L21/306 ,  B23K103/00

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US08889525B2

公开(公告)日：2014-11-18

申请号：US13953443

申请日：2013-07-29

Applicant: Hamamatsu Photonics K.K.

Inventor： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC: H01L21/00 ,  H01L21/78 ,  B23K26/40 ,  B23K26/06 ,  B28D5/00 ,  B23K26/00

CPC classification number: H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract translation: 一种衬底分割方法，其可以在防止发生破裂和破裂的同时使衬底细分割。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，从而形成包含熔融处理区域的改质区域 在半导体衬底1内进行多光子吸收，并且使包含熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。