公开(公告)号：US09553023B2

公开(公告)日：2017-01-24

申请号：US15226284

申请日：2016-08-02

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US08865566B2

公开(公告)日：2014-10-21

申请号：US13829683

申请日：2013-03-14

申请人： Hamamatsu Photonics K.K.

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

IPC分类号： H01L21/00 ,  H01L21/263 ,  B23K26/00 ,  B23K26/08 ,  B23K26/40 ,  B28D1/22 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00

CPC分类号： H01L21/2633 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

摘要翻译： 产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。 这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离 由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

公开(公告)号：US20130252403A1

公开(公告)日：2013-09-26

申请号：US13829683

申请日：2013-03-14

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

IPC分类号： H01L21/263

CPC分类号： H01L21/2633 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

摘要翻译： 产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。 这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离 由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

公开(公告)号：US09852898B2

公开(公告)日：2017-12-26

申请号：US14437345

申请日：2013-09-06

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yoshinori Honda ,  Hiroyuki Taketomi ,  Fumitsugu Fukuyo ,  Koji Kawai ,  Hidetsugu Takaoka ,  Takashi Suzuki

IPC分类号： H01J63/06 ,  H01J63/04 ,  C09K11/77

CPC分类号： H01J63/06 ,  C09K11/7774 ,  H01J63/04

摘要： A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer, disposed on the substrate, for generating ultraviolet light in response to an electron beam. The light-emitting layer includes a powdery or granular oxide crystal containing Lu and Si doped with an activator (e.g., Pr:LPS and Pr:LSO crystals).

公开(公告)号：US09711405B2

公开(公告)日：2017-07-18

申请号：US14984066

申请日：2015-12-30

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L21/768 ,  B23K26/00 ,  B28D5/00 ,  H01L21/304 ,  H01L23/00 ,  B23K26/0622 ,  B23K26/40 ,  H01L21/268 ,  H01L21/683 ,  H01L23/544 ,  H01L21/306 ,  B23K103/00

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US09548246B2

公开(公告)日：2017-01-17

申请号：US15226519

申请日：2016-08-02

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L23/00 ,  H01L21/306 ,  H01L21/683

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

摘要翻译： 一种衬底分割方法，其可以在防止碎裂的同时对衬底进行薄层化和分裂，并发生裂纹。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，从而形成包含熔融处理区域的改质区域 在半导体衬底1内进行多光子吸收，并且使包含熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

公开(公告)号：US09287177B2

公开(公告)日：2016-03-15

申请号：US14793181

申请日：2015-07-07

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L21/304 ,  H01L23/00

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US09240313B2

公开(公告)日：2016-01-19

申请号：US14437376

申请日：2013-09-06

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yoshinori Honda ,  Hiroyuki Taketomi ,  Fumitsugu Fukuyo ,  Koji Kawai ,  Hidetsugu Takaoka ,  Norio Ichikawa ,  Takashi Suzuki

IPC分类号： C23C16/40 ,  H01J63/06

CPC分类号： H01J63/06 ,  C09K11/7774 ,  C23C16/40 ,  H01J63/04

摘要： A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light in response to an electron beam. The light-emitting layer includes a polycrystalline film constituted by an oxide polycrystal containing Lu and Si doped with an activator or a polycrystalline film constituted by a rare-earth-containing aluminum garnet polycrystal doped with an activator.

摘要翻译： 紫外光产生的目标包括适于透射紫外光的基板和设置在基板上的发光层，并响应于电子束产生紫外光。 发光层包括由掺杂有活化剂的Lu和Si的氧化物多晶体或由掺杂有活化剂的含稀土的铝石榴石多晶构成的多晶膜构成的多晶膜。

公开(公告)号：US11241757B2

公开(公告)日：2022-02-08

申请号：US16380660

申请日：2019-04-10

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Kazuhiro Atsumi ,  Koji Kuno ,  Masayoshi Kusunoki ,  Tatsuya Suzuki ,  Kenshi Fukumitsu ,  Fumitsugu Fukuyo

IPC分类号： B23K26/04 ,  B28D5/00 ,  H01L21/67 ,  B23K26/53 ,  B23K26/40 ,  B23K26/38 ,  B23K26/06 ,  B23K26/046 ,  H01L21/78 ,  B23K101/40 ,  B23K103/00

摘要： A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided.
This laser processing method comprises a preparatory step of holding a lens at an initial position set such that a converging point is located at a predetermined position within the object; a first processing step (S11 and S12) of emitting a first laser beam for processing while holding the lens at the initial position, and moving the lens and the ltd object relative to each other along a main surface so as to form a modified region in one end part of a line to cut; and a second processing step (S13 and S14) of releasing the lens from being held at the initial position after forming the modified region in the one end part of the line to cut, and then moving the lens and the object relative to each other along the main surface while adjusting the gap between the lens and the main surface after the release, so as to form the modified region.

公开(公告)号：US09728393B2

公开(公告)日：2017-08-08

申请号：US14437236

申请日：2013-09-06

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yoshinori Honda ,  Hiroyuki Taketomi ,  Fumitsugu Fukuyo ,  Koji Kawai ,  Hidetsugu Takaoka ,  Takashi Suzuki

IPC分类号： H01J63/06 ,  C09K11/77 ,  B05D5/06 ,  H01J9/22

CPC分类号： H01J63/06 ,  B05D5/061 ,  C09K11/7774 ,  C09K2211/1416 ,  H01J9/221

摘要： A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light UV in response to an electron beam. The light-emitting layer includes a powdery or granular rare-earth-containing aluminum garnet crystal doped with an activator. The light-emitting layer has an ultraviolet light emission peak wavelength of 300 nm or shorter.