公开(公告)号：US20240153765A1

公开(公告)日：2024-05-09

申请号：US18280621

申请日：2022-03-09

申请人： SCREEN Holdings Co., Ltd. ,  National University Corporation Tokai National Higher Education and Research System

发明人： Masaki INABA ,  Kei SUZUKI ,  Masaru HORI ,  Osamu ODA ,  Kazuki KODAMA

IPC分类号： H01L21/02 ,  C23C16/30 ,  H01L21/263 ,  H01L21/67

CPC分类号： H01L21/0254 ,  C23C16/303 ,  H01L21/02252 ,  H01L21/0242 ,  H01L21/2636 ,  H01L21/67017 ,  H01L21/67115

摘要： A method for producing a group III nitride semiconductor includes a loading step (S1), a decompression step (S2), a heating step (S3), an excitation gas supply step (S5), and an organometallic gas supply step (S6). In the loading step (Si), a substrate is loaded into a chamber. In the decompression step (S2), a suction part reduces a pressure inside the chamber. In the heating step (S3), a heater provided inside the chamber heats the substrate. In the excitation gas supply step (S5), a first gas that contains nitrogen without containing hydrogen is supplied to a plasma generator, and an excitation gas obtained by turning the first gas into plasma by the plasma generator is supplied to the substrate inside the chamber. In the organometallic gas supply step (S6), a second gas that is an organometallic gas that contains a group III element is supplied to the substrate inside the chamber.

公开(公告)号：US11823898B2

公开(公告)日：2023-11-21

申请号：US17120093

申请日：2020-12-11

申请人： FUJI ELECTRIC CO., LTD.

发明人： Yuichi Onozawa

IPC分类号： H01L29/36 ,  H01L21/02 ,  H01L29/10 ,  H01L29/739 ,  H01L21/263 ,  H01L29/32 ,  H01L29/66 ,  H01L29/861 ,  H01L29/06 ,  H01L29/167 ,  H01L29/868 ,  H01L29/40

CPC分类号： H01L21/02351 ,  H01L21/02304 ,  H01L21/263 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36 ,  H01L29/365 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/868 ,  H01L29/8611 ,  H01L29/402 ,  H01L29/404

摘要： A semiconductor device is disclosed in which proton implantation is performed a plurality of times to form a plurality of n-type buffer layers in an n-type drift layer at different depths from a rear surface of a substrate. The depth of the n-type buffer layer, which is provided at the deepest position from the rear surface of the substrate, from the rear surface of the substrate is more than 15 μm. The temperature of a heat treatment which is performed in order to change a proton into a donor and to recover a crystal defect after the proton implantation is equal to or higher than 400° C. In a carrier concentration distribution of the n-type buffer layer, a width from the peak position of carrier concentration to an anode is more than a width from the peak position to a cathode.

公开(公告)号：US11772198B2

公开(公告)日：2023-10-03

申请号：US17115284

申请日：2020-12-08

申请人： SEMES CO., LTD.

发明人： Won Geun Kim ,  Tae Shin Kim

IPC分类号： B23K26/362 ,  H01L21/263 ,  B23K101/40

CPC分类号： B23K26/362 ,  H01L21/2633 ,  B23K2101/40

摘要： A thin layer etching apparatus includes an etchant supply unit configured to supply an etchant onto a substrate to etch a thin layer formed on the substrate, a temperature measuring unit configured to measure a temperature of the substrate while an etching process is performed by the etchant, a laser irradiating unit configured to irradiate a first laser beam on a first portion including a central portion of the substrate and to irradiate a second laser beam in a ring shape on a second portion surrounding the first portion so that the temperature of the substrate is maintained at a predetermined temperature during the etching process, and a process control unit configured to control power of the first and second laser beams based on the temperature of the substrate measured by the temperature measuring unit to reduce a temperature difference between the first and second portions of the substrate.

公开(公告)号：US20230245933A1

公开(公告)日：2023-08-03

申请号：US17591569

申请日：2022-02-02

申请人： KLA Corporation

发明人： Youfei JIANG ,  Michael STEIGERWALD ,  Christopher SEARS

IPC分类号： H01L21/66 ,  H01J37/31 ,  H01J37/147 ,  H01L21/263 ,  B23K15/00 ,  B23K15/02 ,  B23K15/08

CPC分类号： H01L22/26 ,  H01J37/31 ,  H01J37/1474 ,  H01L21/2633 ,  B23K15/0013 ,  B23K15/002 ,  B23K15/0006 ,  B23K15/02 ,  B23K15/08 ,  B23K2103/56

摘要： The dual focused ion beam and scanning electron beam system includes an electron source that generates an electron beam and an ion source that generates an ion beam. The electron beam column directs an electron beam at a normal angle relative to a top surface of the stage. An ion beam column directs the ion beam at the stage. The ion beam is at an angle relative to the electron beam. A detector receives the electron beam reflected from the wafer on the stage.

公开(公告)号：US20230050650A1

公开(公告)日：2023-02-16

申请号：US17402030

申请日：2021-08-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jung-Hao CHANG ,  Po-Chin Chang ,  Pinyen Lin ,  Li-Te Lin

IPC分类号： H01J37/32 ,  H01L21/263 ,  H01L21/687

摘要： The present disclosure relates to a semiconductor device manufacturing system. The semiconductor device manufacturing system can include a chamber and an ion source in the chamber. The ion source can include an outlet. The ion source can be configured to generate a particle beam. The semiconductor device manufacturing system can further include a grid structure proximate to the outlet of the ion source and configured to manipulate the particle beam. A first portion of the grid structure can be electrically insulated from a second portion of the grid structure.

公开(公告)号：US11469085B2

公开(公告)日：2022-10-11

申请号：US16473810

申请日：2017-10-17

申请人： Evatec AG

发明人： Jurgen Weichart ,  Johannes Weichart

IPC分类号： C23C16/00 ,  H01L21/00 ,  H01J37/32 ,  C23C16/46 ,  C23C14/35 ,  C23C16/44 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67

摘要： In a plasma reactor a pumping compartment is separate from a plasma-treating compartment by a structure which includes a central frame. The frame is suspended to the casing of the reactor via spokes. The spokes allow free expansion and contraction of the frame under thermal loading. The slits between the spokes do not allow plasma ignition there and provide for a small flow resistance between the treatment compartment and the pumping compartment. The frame may act as a downholding member for a substrate on the smaller electrode.

公开(公告)号：US20220277938A1

公开(公告)日：2022-09-01

申请号：US17560684

申请日：2021-12-23

申请人： KOKUSAI ELECTRIC CORPORATION

发明人： Tomoki IMAMURA ,  Kazuyuki OKUDA ,  Tsuyoshi TAKEDA ,  Daisuke HARA

IPC分类号： H01J37/32 ,  H01L21/263

摘要： There is provided a technique that includes a process chamber configured to process a substrate; a gas supplier configured to supply a gas into the process chamber; a first plasma electrode unit including a first reference electrode applied with a reference potential and at least one selected from the group of a first application electrode and a second application electrode applied with high-frequency power, the first plasma electrode unit configured to plasma-excite the gas; and a second plasma electrode unit including a second reference electrode applied with a reference potential and a third application electrode applied with high-frequency power, the third application electrode having a length different from a length of the first application electrode or the second application electrode, and the second plasma electrode unit configured to plasma-excite the gas.

公开(公告)号：US20220208514A1

公开(公告)日：2022-06-30

申请号：US17546516

申请日：2021-12-09

申请人： Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

发明人： Maolin Long

IPC分类号： H01J37/32 ,  H01L21/263

摘要： A grid assembly for injecting process gas to a chamber. The grid assembly including a gas inlet for delivering the process gas to the grid assembly, a plurality of nozzles extending vertically through at least a portion of the grid assembly, and a plurality of layers in a vertical stacked arrangement. The plurality of layers including a top layer including one or more internal gas injection channels configured to receive process gas from the gas inlet, a bottom layer including a plurality of internal gas injection channels having one or more injection apertures configured to deliver the process gas about a horizontal plane to one or more of the plurality of nozzles, and one or more sublayers disposed between the top layer and the bottom layer, each of the one or more sublayers including an increasing number of internal gas injection channels as the one or more sublayers advance from the top layer to the bottom layer. Plasma processing apparatuses and method of processing workpiece are also provided.

公开(公告)号：US11295952B2

公开(公告)日：2022-04-05

申请号：US16896428

申请日：2020-06-09

申请人： SEMES CO., LTD.

发明人： Tae Sub Lee ,  Gyu Hyun Kim ,  Sung Yong Lee ,  Donghyuk Seo ,  Seo Jung Park

IPC分类号： H01L21/26 ,  H01L21/263 ,  H01L21/02 ,  H01L21/67

摘要： An apparatus for treating a substrate is disclosed. The apparatus for treating the substrate includes a housing having a treatment space inside the housing, a plate to support the substrate inside the housing, a heating member provided inside the plate to heat the substrate and including a plurality of heating zones, a temperature measuring member to measure a temperature of the substrate with respect to each of the plurality of heating zones of the heating member, and a control unit to control a temperature for the heating member in a dynamic section of a temperature change graph measured in the temperature measuring member. The control unit performs temperature control with respect to each of the plurality of heating zones of the heating member to uniformize the thickness of the thin film on the substrate.

公开(公告)号：US11176656B2

公开(公告)日：2021-11-16

申请号：US16409477

申请日：2019-05-10

申请人： FEI Company

发明人： Thomas Gary Miller ,  John F. Flanagan, IV ,  Brian Routh, Jr. ,  Richard Young ,  Brad Larson ,  Aditee Shrotre

IPC分类号： G06T7/00 ,  G06K9/62 ,  H01L21/26 ,  C23F1/04 ,  G06N3/04 ,  G06N20/00 ,  H01L21/66 ,  H01L21/268 ,  H01L21/263

摘要： Methods and systems for implementing artificial intelligence enabled preparation end-pointing are disclosed. An example method at least includes obtaining an image of a surface of a sample, the sample including a plurality of features, analyzing the image to determine whether an end point has been reached, the end point based on a feature of interest out of the plurality of features observable in the image, and based on the end point not being reached, removing a layer of material from the surface of the sample.