LASER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL

    公开(公告)号:US20240189940A1

    公开(公告)日:2024-06-13

    申请号:US18411914

    申请日:2024-01-12

    Abstract: A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.

    Method of manufacturing semiconductor element and semiconductor element

    公开(公告)号:US11901233B2

    公开(公告)日:2024-02-13

    申请号:US17327005

    申请日:2021-05-21

    CPC classification number: H01L21/78 B23K26/40 B23K26/53 H01L23/544 B23K2101/40

    Abstract: A method of manufacturing a semiconductor element includes a first irradiation step in which a laser beam is irradiated to form, in the interior of the substrate, a plurality of first modified portions aligned along a first direction; a second irradiation step in which a laser beam is irradiated to form a plurality of second modified portions aligned along the first direction at a position adjacent to the plurality of first modified portions in the second direction; and a third irradiation step which a laser beam is irradiated to form a plurality of third modified portions aligned along the first direction at a position closer to the first surface than the first modified portions and overlapping the plurality of first modified portions in a thickness direction of the substrate.

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