公开(公告)号：US11101315B2

公开(公告)日：2021-08-24

申请号：US15782114

申请日：2017-10-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro Fujii ,  Terumasa Nagano ,  Kazuhisa Yamamura ,  Kenichi Sato ,  Ryutaro Tsuchiya

IPC: H01L27/144 ,  H01L27/146 ,  G01T1/24 ,  G01N23/046 ,  G01T1/29 ,  H01L31/0224 ,  H01L31/115

Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

公开(公告)号：US08791538B2

公开(公告)日：2014-07-29

申请号：US13655907

申请日：2012-10-19

Applicant: Hamamatsu Photonics K.K.

Inventor： Koei Yamamoto ,  Terumasa Nagano ,  Kazuhisa Yamamura ,  Kenichi Sato ,  Ryutaro Tsuchiya

IPC: H01L31/107 ,  H01L31/00

CPC classification number: H01L27/14643 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14636 ,  H01L28/24 ,  H01L31/02027 ,  H01L31/022416 ,  H01L31/022466 ,  H01L31/107

Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

Abstract translation: 光接收区域包括多个光检测部分10.光检测部分10具有第二接触电极4A。 第二接触电极4A配置在与第一接触电极3A重叠的位置，以与第一接触电极接触。 此外，电阻层4B继续到第二接触电极4A。

公开(公告)号：US12021100B2

公开(公告)日：2024-06-25

申请号：US17258947

申请日：2019-06-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shinya Iwashina ,  Shunsuke Adachi ,  Shigeyuki Nakamura ,  Terumasa Nagano ,  Ryutaro Tsuchiya

IPC: H04N25/766 ,  G01S7/497 ,  G01S17/89 ,  H01L27/146 ,  H01L31/107

CPC classification number: H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H04N25/766 ,  G01S7/497 ,  G01S17/89 ,  H01L31/107

Abstract: Each of a plurality of cells includes at least one avalanche photodiode. A light projecting unit is arranged to project light having a cross-sectional shape whose longitudinal direction corresponds to a first direction. The light projecting unit is arranged to scan the light along a second direction intersecting the first direction such that the reflected light is incident on, among N cell groups each of which includes M cells aligned in a row direction, each cell group or each plurality of cell groups. A controller is arranged to apply, in accordance with the incidence of the reflected light, a bias voltage that makes the avalanche photodiode operate in a Geiger mode to each cell group or each plurality of cell groups, and is arranged to read signals from cells included in the cell group or the plurality of cell groups to which the bias voltage has been applied.

公开(公告)号：US11322635B2

公开(公告)日：2022-05-03

申请号：US16346929

申请日：2017-11-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takashi Baba ,  Shunsuke Adachi ,  Shigeyuki Nakamura ,  Terumasa Nagano ,  Koei Yamamoto

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/02 ,  G01J1/44

Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

公开(公告)号：US10658415B2

公开(公告)日：2020-05-19

申请号：US16315708

申请日：2017-07-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Ishida ,  Noburo Hosokawa ,  Terumasa Nagano ,  Takashi Baba

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

公开(公告)号：US10141368B2

公开(公告)日：2018-11-27

申请号：US15561992

申请日：2016-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Ishida ,  Noburo Hosokawa ,  Terumasa Nagano ,  Takashi Baba

IPC: H01L31/107 ,  H01L27/146 ,  H01L21/3205 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L23/00 ,  H01L31/02 ,  H01L31/0216 ,  H01L23/48 ,  H01L31/0203 ,  H01L31/103

Abstract: In a plane including the center line of a vertical through hole, it is assumed that a segment that connects a first point corresponding to the edge of an opening of an insulating layer and a second point corresponding to the edge of a second opening is a first segment, a segment that connects the second point and a third point corresponding to an intersection point between the second opening and a surface of the insulating layer is a second segment, and a segment that connects the third point and the first point is a third segment. In the insulating layer, the first area located on one side with respect to the first segment is larger than the sum of the second area surrounded by the first, the second and the third segments and the third area located on the other side with respect to the third segment.

公开(公告)号：US20160141439A1

公开(公告)日：2016-05-19

申请号：US15002706

申请日：2016-01-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC: H01L31/107 ,  H01L27/146 ,  H01L49/02 ,  H01L27/144 ,  H01L31/02

CPC classification number: H01L31/107 ,  G01J1/42 ,  G01T1/208 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14663 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/022408

Abstract: A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

Abstract translation: 半导体光检测元件包括以Geiger模式操作并形成在半导体衬底中的多个雪崩光电二极管，与各个雪崩光电二极管串联连接并设置在半导体衬底的第一主表面侧上的骤冷电阻器，以及多个通孔 电极连接到淬火电阻器并形成为从第一主表面侧穿过半导体衬底到第二主表面侧的电极。 安装基板包括在第三主表面侧对应于相应的通孔电极布置的多个电极。 通孔电极和电极通过凸块电极电连接，半导体衬底的侧表面和玻璃衬底的侧表面彼此齐平。

公开(公告)号：US12046612B2

公开(公告)日：2024-07-23

申请号：US17260324

申请日：2019-06-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryutaro Tsuchiya ,  Terumasa Nagano ,  Takashi Baba

IPC: H01L27/146 ,  H04N25/766 ,  G01S7/497 ,  G01S17/89 ,  H01L31/107

CPC classification number: H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H04N25/766 ,  G01S7/497 ,  G01S17/89 ,  H01L31/107

Abstract: A semiconductor substrate has a first main surface and a second main surface that oppose each other and a plurality of cells that are arrayed two-dimensionally in a matrix. Each cell includes at least one avalanche photodiode arranged to operate in a Geiger mode. A trench penetrating through the semiconductor substrate is formed in the semiconductor substrate to surround each cell when viewed in a direction orthogonal to the first main surface. A light-shielding member optically separates mutually adjacent cells of the plurality of cells. The light-shielding member includes a first portion extending in a thickness direction of the semiconductor substrate between an opening end of the trench at the first main surface and an opening end of the trench at the second main surface and a second portion projecting out from the second main surface. The insulating film includes a portion that covers the second portion.

公开(公告)号：US11508770B2

公开(公告)日：2022-11-22

申请号：US17053647

申请日：2019-04-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Ishida ,  Takashi Baba ,  Masanori Okada ,  Terumasa Nagano

IPC: H01L27/146 ,  H04N5/359 ,  H01L31/107 ,  H04N5/351

Abstract: A back-illuminated semiconductor light detecting device includes a light detecting substrate having pixels, and a circuit substrate having signal processing units. For each of the pixels, the light detecting substrate includes avalanche photodiodes respectively having light receiving regions provided in a first main surface side of the semiconductor substrate. In the semiconductor substrate, for each pixel, a trench surrounds at least one region including the light receiving region when viewed from a direction perpendicular to the first main surface. The number of signal processing units is larger than the number of light receiving regions in each pixel, and the number of regions surrounded by the trench in each pixel is equal to or less than the number of light receiving regions in the pixel.

公开(公告)号：US20220231071A1

公开(公告)日：2022-07-21

申请号：US17714904

申请日：2022-04-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Ishida ,  Noburo Hosokawa ,  Terumasa Nagano ,  Takashi Baba

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.