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    Photodetector device
    1.
    发明授权
    Photodetector device 有权

    公开(公告)号：US11774283B2

    公开(公告)日：2023-10-03

    申请号：US16963303

    申请日：2019-01-24

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Takashi Baba ,  Tatsuya Hashi ,  Yoshihito Suzuki ,  Kenji Makino ,  Shigeyuki Nakamura

    IPC: G01J1/44 ,  G01S7/4863 ,  G01S7/4865 ,  G01S17/894

    CPC classification number: G01J1/44 ,  G01S7/4863 ,  G01S7/4865 ,  G01J2001/448 ,  G01J2001/4466 ,  G01S17/894

    Abstract: A photodetector device includes an avalanche photodiode array substrate. A circuit substrate includes time measurement circuits and a clock driver. Each of the time measurement circuit includes a delay line unit, and is arranged to acquire, from an operation result of a delay line, time information indicating timing at which a pulse signal is input from a corresponding avalanche photodiode. The delay line unit is arranged to initiate an operation of the delay line in response to input of the pulse signal to the time measurement circuit, and to stop the operation of the delay line in response to input of a clock signal from a clock driver to the time measurement circuit, and is arranged to detect a time interval shorter than a cycle of the clock signal by the operation of the delay line.

    PHOTODETECTOR DEVICE
    2.
    发明公开
    PHOTODETECTOR DEVICE 审中-公开

    公开(公告)号：US20230358607A1

    公开(公告)日：2023-11-09

    申请号：US18223277

    申请日：2023-07-18

    Applicant: Hamamatsu Photonics K.K.

    Inventor： Takuya FUJITA ,  Yusei Tamura ,  Kenji Makino ,  Takashi Baba ,  Koel Yamamoto

    IPC: G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L31/107

    CPC classification number: G01J1/44 ,  H01L27/1446 ,  H01L31/02027 ,  H01L31/107 ,  G01J2001/442 ,  G01J2001/4466

    Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

    Light detection apparatus
    3.
    发明授权
    Light detection apparatus 有权

    公开(公告)号：US11747195B2

    公开(公告)日：2023-09-05

    申请号：US17801004

    申请日：2021-02-15

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Tatsuya Hashi ,  Shinya Iwashina ,  Takashi Baba ,  Shigeyuki Nakamura

    IPC: G01J1/44 ,  G01S7/481 ,  G01S7/487 ,  G01S7/493 ,  H01L27/144

    CPC classification number: G01J1/44 ,  G01S7/4816 ,  G01S7/4876 ,  G01S7/493 ,  H01L27/1446 ,  G01J2001/448 ,  G01J2001/4466

    Abstract: In a light detection device, a circuit substrate includes a plurality of signal processing units which process a detection signal output from a corresponding pixel. Light-receiving regions of a plurality of avalanche photodiodes are two-dimensionally arranged for every pixel. In each of the signal processing units, a timing measurement unit measures timing at which light is incident on a corresponding pixel, based on the detection signal. An energy measurement unit measures energy of light incident on a corresponding pixel, based on the detection signal. A storage unit stores a measurement result in the timing measurement unit and the energy measurement unit. A light detection region where a plurality of the pixels are provided and a signal processing region where a plurality of the signal processing units are provided overlap each other at least at a part.

    Light detection device
    4.
    发明授权
    Light detection device 有权

    公开(公告)号：US11362127B2

    公开(公告)日：2022-06-14

    申请号：US16834121

    申请日：2020-03-30

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Atsushi Ishida ,  Noburo Hosokawa ,  Terumasa Nagano ,  Takashi Baba

    IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224

    Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

    Optical sensor
    5.
    发明授权
    Optical sensor 有权

    公开(公告)号：US10937920B2

    公开(公告)日：2021-03-02

    申请号：US16323810

    申请日：2017-11-09

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Atsushi Ishida ,  Takashi Baba ,  Terumasa Nagano ,  Noburo Hosokawa

    IPC: H01L31/107 ,  H01L27/144 ,  H01L31/0224 ,  H01L27/146 ,  H01L31/02

    Abstract: A photodetecting device includes a semiconductor substrate including a first principal surface and a second principal surface that oppose each other and a plurality of through-electrodes penetrating through the semiconductor substrate in a thickness direction. The semiconductor substrate includes a plurality of avalanche photodiodes arranged to operate in Geiger mode. The plurality of through-electrodes are electrically connected to the corresponding avalanche photodiodes. The semiconductor substrate includes a first area in which the plurality of avalanche photodiodes are distributed in at least a first direction and a second area in which the plurality of through-electrodes are distributed two-dimensionally. The first area and the second area are distributed in a second direction orthogonal to a first direction when viewed from a direction orthogonal to the first principal surface.

    Light detection device
    8.
    发明授权
    Light detection device 有权

    公开(公告)号：US09425224B2

    公开(公告)日：2016-08-23

    申请号：US14605120

    申请日：2015-01-26

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

    IPC: H01L27/144 ,  H01L31/107 ,  H01L31/02 ,  H01L27/146 ,  H01L31/0232

    CPC classification number: H01L27/1446 ,  H01L27/1443 ,  H01L27/14605 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/02322 ,  H01L31/107 ,  H01L2224/11

    Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

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