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    Radiation detection element, radiation detector and radiation detection device
    1.
    发明授权
    Radiation detection element, radiation detector and radiation detection device 有权

    公开(公告)号：US12183844B2

    公开(公告)日：2024-12-31

    申请号：US17422937

    申请日：2020-01-27

    Applicant: HORIBA, LTD.

    Inventor： Daisuke Matsunaga ,  Antonino Picciotto ,  Giacomo Borghi

    IPC: H01L31/115 ,  H01L31/0203

    Abstract: The radiation detection element comprising a semiconductor part having a plate shape, a first electrode that is disposed on a first surface being one surface of the semiconductor part and that collects charges generated by incidence of radiation in the semiconductor part, a second electrode that is disposed on a second surface being the other surface of the semiconductor part and that is applied with voltage needed for collecting the charges, and a heavily-doped layer that is disposed at a region of the second surface excluding an edge of the semiconductor part and is doped heavier than the semiconductor part with dopants for making a type of a semiconductor equal to that of the semiconductor part. The heavily-doped layer is on the second surface located at a position overlapped with the second electrode and is thicker than the second electrode.

    SEMICONDUCTOR DETECTOR AND METHOD OF FABRICATING SAME
    2.
    发明公开
    SEMICONDUCTOR DETECTOR AND METHOD OF FABRICATING SAME 审中-公开

    公开(公告)号：US20240234620A9

    公开(公告)日：2024-07-11

    申请号：US18499141

    申请日：2023-10-31

    Applicant: ASML Netherlands B.V.

    Inventor： Gianpaolo LORITO ,  Stoyan NIHTIANOV ,  Xinqing LIANG ,  Kenichi KANAI

    IPC: H01L31/115 ,  H01J37/244 ,  H01J37/28

    CPC classification number: H01L31/115 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2441

    Abstract: The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

    Ultra-compact, passive, wireless sensor using quantum capacitance effect in graphene
    7.
    发明授权
    Ultra-compact, passive, wireless sensor using quantum capacitance effect in graphene 有权

    公开(公告)号：US11561192B2

    公开(公告)日：2023-01-24

    申请号：US17249213

    申请日：2021-02-24

    Applicant: Regents of the University of Minnesota

    Inventor： Steven J. Koester

    IPC: H01L29/93 ,  G01N27/22 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423 ,  H01L31/08 ,  H01L31/115 ,  G01R27/26

    Abstract: An electrical device includes at least one graphene quantum capacitance varactor. In some examples, the graphene quantum capacitance varactor includes an insulator layer, a graphene layer disposed on the insulator layer, a dielectric layer disposed on the graphene layer, a gate electrode formed on the dielectric layer, and at least one contact electrode disposed on the graphene layer and making electrical contact with the graphene layer. In other examples, the graphene quantum capacitance varactor includes an insulator layer, a gate electrode recessed in the insulator layer, a dielectric layer formed on the gate electrode, a graphene layer formed on the dielectric layer, wherein the graphene layer comprises an exposed surface opposite the dielectric layer, and at least one contact electrode formed on the graphene layer and making electrical contact with the graphene layer.

    DEEP JUNCTION LOW-GAIN AVALANCHE DETECTOR
    8.
    发明申请
    DEEP JUNCTION LOW-GAIN AVALANCHE DETECTOR 有权

    公开(公告)号：US20220352400A1

    公开(公告)日：2022-11-03

    申请号：US17772310

    申请日：2020-10-30

    Applicant: The Regents of the University of California

    Inventor： Carolyn Gee ,  Simone Michele Mazza ,  Bruce A. Schumm ,  Yuzhan Zhao

    IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/115

    Abstract: An avalanche diode including a gain region and a readout structure including an n-type (p-type) region having electrically isolated segments each including implanted regions; a p-type (n-type) region; and a first electrode on each of the segments. The gain region includes a p-n junction buried between the n-type region and the p-type region: an n+-type region having a higher n-type dopant density than the n-type region; a p+-type region having a higher p-type dopant density than the p-type region; and the p-n junction between the n+-type region and the p+-type region. A bias between the first electrodes and a second electrode (ohmically contacting the p-type (n-type) region) reverse biases the p-n junction. Electrons generated in response to electromagnetic radiation or charged particles generate additional electrons m the gain region through impact ionization but the segmented region comprises a low field region isolating the gain region from the first electrodes.

    Radiation detector, radiographic imaging apparatus, and manufacturing method
    9.
    发明授权
    Radiation detector, radiographic imaging apparatus, and manufacturing method 有权

    公开(公告)号：US11428827B2

    公开(公告)日：2022-08-30

    申请号：US17320241

    申请日：2021-05-14

    Applicant: FUJIFILM CORPORATION

    Inventor： Shinichi Ushikura ,  Munetaka Kato ,  Keiichi Akamatsu ,  Haruyasu Nakatsugawa

    IPC: H01L31/115 ,  G01T1/29 ,  G01T1/161

    Abstract: Provided are a radiation detector, a radiographic imaging apparatus, and a manufacturing method that include a TFT substrate in which a plurality of pixels that accumulate electric charges generated depending on light converted from radiation are formed in a pixel region of a first surface of a flexible base material and a terminal region of the first surface is provided with a terminal for electrically connecting a flexible cable; a conversion layer that is provided outside the terminal region on the first surface of the base material to convert the radiation into light; a first reinforcing substrate that is provided on a surface of the conversion layer opposite to a surface on a TFT substrate side and has a higher stiffness than the base material; and a second reinforcing substrate that is provided on a second surface of the base material opposite to the first surface to cover a surface larger than the first reinforcing substrate, and that are capable of suppressing that a defect occurs in the substrate and have an excellent peeling property in a reworking process.

    Packaging of Semiconductor X-Ray Detectors
    10.
    发明申请
    Packaging of Semiconductor X-Ray Detectors 有权

    公开(公告)号：US20220268949A1

    公开(公告)日：2022-08-25

    申请号：US17736436

    申请日：2022-05-04

    Applicant: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.

    Inventor： Peiyan CAO ,  Yurun LIU

    IPC: G01T1/24 ,  H01L27/146 ,  H01L31/115

    Abstract: Disclosed herein is an apparatus suitable for detecting x-ray, comprising: an X-ray absorption layer configured to generate an electrical signal from an X-ray photon incident on the X-ray absorption layer; an electronics layer comprising an electronics system configured to process or interpret the electrical signal; and an interposer chip embedded in a board of an electrically insulating material; wherein the X-ray absorption layer is bonded to the electronics layer; wherein the electronics layer is bonded to the interposer chip.

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