公开(公告)号：US11923471B2

公开(公告)日：2024-03-05

申请号：US17772310

申请日：2020-10-30

Applicant: The Regents of the University of California

Inventor： Carolyn Gee ,  Simone Michele Mazza ,  Bruce A. Schumm ,  Yuzhan Zhao

IPC: H01L31/0352 ,  H01L31/115 ,  H01L31/18 ,  H01L31/0288

CPC classification number: H01L31/035272 ,  H01L31/115 ,  H01L31/1804 ,  H01L31/0288

Abstract: An avalanche diode including a gain region and a readout structure including an n-type (p-type) region having electrically isolated segments each including implanted regions; a p-type (n-type) region; and a first electrode on each of the segments. The gain region includes a p-n junction buried between the n-type region and the p-type region: an n+-type region having a higher n-type dopant density than the n-type region; a p+-type region having a higher p-type dopant density than the p-type region; and the p-n junction between the n+-type region and the p+-type region. A bias between the first electrodes and a second electrode (ohmically contacting the p-type (n-type) region) reverse biases the p-n junction. Electrons generated in response to electromagnetic radiation or charged particles generate additional electrons m the gain region through impact ionization but the segmented region comprises a low field region isolating the gain region from the first electrodes.

公开(公告)号：US20220352400A1

公开(公告)日：2022-11-03

申请号：US17772310

申请日：2020-10-30

Applicant: The Regents of the University of California

Inventor： Carolyn Gee ,  Simone Michele Mazza ,  Bruce A. Schumm ,  Yuzhan Zhao

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/115

Abstract: An avalanche diode including a gain region and a readout structure including an n-type (p-type) region having electrically isolated segments each including implanted regions; a p-type (n-type) region; and a first electrode on each of the segments. The gain region includes a p-n junction buried between the n-type region and the p-type region: an n+-type region having a higher n-type dopant density than the n-type region; a p+-type region having a higher p-type dopant density than the p-type region; and the p-n junction between the n+-type region and the p+-type region. A bias between the first electrodes and a second electrode (ohmically contacting the p-type (n-type) region) reverse biases the p-n junction. Electrons generated in response to electromagnetic radiation or charged particles generate additional electrons m the gain region through impact ionization but the segmented region comprises a low field region isolating the gain region from the first electrodes.