公开(公告)号：US20240363773A1

公开(公告)日：2024-10-31

申请号：US18767278

申请日：2024-07-09

申请人： TRINA SOLAR CO., LTD.

发明人： Zigang Wang ,  Kuiyi Wu

IPC分类号： H01L31/0288 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/0288 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/03682 ,  H01L31/182

摘要： A solar cell, a preparation method thereof, and a photovoltaic module. The solar cell includes a silicon substrate, a tunnel oxide layer, a first doped polysilicon layer, a laser-absorption layer, and a second doped polysilicon layer. The tunnel oxide layer is disposed on a surface of the silicon substrate. The first doped polysilicon layer is disposed on a surface of the tunnel oxide layer. A surface of the first doped polysilicon layer includes a metal contact region and a non-metal contact region. The laser-absorption layer is disposed on the metal contact region of the surface of the first doped polysilicon layer. The laser-absorption layer is adapted to be vaporized by absorbing a laser having a predetermined wavelength. The second doped polysilicon layer is disposed on a surface of the laser-absorption layer.

公开(公告)号：US12113526B2

公开(公告)日：2024-10-08

申请号：US17812018

申请日：2022-07-12

申请人： Lawrence Livermore National Security, LLC

发明人： Lars F. Voss ,  Adam M. Conway

IPC分类号： H03K17/78 ,  H01L31/0288 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/09

CPC分类号： H03K17/78 ,  H01L31/0288 ,  H01L31/03042 ,  H01L31/03044 ,  H01L31/03125 ,  H01L31/09

摘要： A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

公开(公告)号：US12094988B1

公开(公告)日：2024-09-17

申请号：US17807957

申请日：2022-06-21

申请人： REDLEN TECHNOLOGIES, INC.

发明人： James Balcom ,  Jason MacKenzie ,  Francis Joseph Kumar ,  Krzysztof Iniewski ,  Michael K. Jackson ,  Yuxin Song

IPC分类号： H01L31/0272 ,  H01L31/0288 ,  H01L31/08 ,  H01L31/109

CPC分类号： H01L31/0272 ,  H01L31/0288 ,  H01L31/085 ,  H01L31/109

摘要： An ionizing radiation detector includes a p-type semiconductor single crystal substrate having first and second major planar opposing surfaces, where the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and where a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate; a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate, and a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate.

公开(公告)号：US20240274734A1

公开(公告)日：2024-08-15

申请号：US18442127

申请日：2024-02-15

申请人： SOLARPAINT LTD.

发明人： Ygal Eisenberg ,  Eran Maimon ,  Yaron Tidhar ,  Asaf Katz ,  Hod Yarkoni

IPC分类号： H01L31/0352 ,  H01L31/0224 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/035281 ,  H01L31/022433 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1876

摘要： Improved flexible solar panels and photovoltaic devices, and methods and systems for producing them. A solar cell has non-transcending grooves or trenches, that penetrate some, but not all, of a silicon layer or semiconductor wafer of the solar cell. The non-transcending grooves or trenches are segmenting the solar cell into regions, and provide flexibility and mechanical resilience. Selective and localized region-constrained doping of an opposite polarity is performed at particular regions or locations of a surface or front region of the solar cell; as well as selective and localized placement of metallized electrical contacts. Grooving or trenching operations can be performed via a dopant-containing layer, to prevent or reduce recombination at or near exposed surfaces. A particular layout of metallization is used for producing electrical contacts or “fingers” that are dashed or segmented or spaced-apart; such that grooving or trenching or segmentation lines are located along non-metallized gaps between adjacent contacts and between adjacent rows of contacts.

公开(公告)号：US20240266460A1

公开(公告)日：2024-08-08

申请号：US18488909

申请日：2023-10-17

申请人： ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

发明人： Hao WANG ,  Wenqi LI ,  Ding YU ,  Jiahao WU ,  Xu LIU

IPC分类号： H01L31/18 ,  H01L31/02 ,  H01L31/0288

CPC分类号： H01L31/1868 ,  H01L31/02008 ,  H01L31/0288 ,  H01L31/182

摘要： The solar cell includes a silicon substrate, multiple first electrodes, and multiple second electrodes. The solar cell further includes a tunneling oxide layer, multiple doped polysilicon layers, and at least one barrier layer. The at least one barrier layer is arranged between every adjacent two doped polysilicon layers in the multiple doped polysilicon layers, and the multiple first electrodes are electrically connected to different doped polysilicon layers. The solar cell provided according to the present application can reduce the total thickness of the polycrystalline silicon layer, so that a thinner polycrystalline silicon layer can reduce parasitic absorption, thereby increasing short-circuit current. Moreover, the risk of slurry burning through the tunneling oxide layer is reduced by the barrier layer, while reducing metal recombination, which increases the open circuit voltage of the solar cell, thereby improving the photoelectric conversion efficiency of the solar cell.

公开(公告)号：US20240266451A1

公开(公告)日：2024-08-08

申请号：US18387556

申请日：2023-11-07

申请人： TRINA SOLAR CO., LTD. ,  TRINA SOLAR (SUQIAN) PHOTOELECTRIC CO., LTD.

发明人： Chengfa LIU ,  Xiaopeng WU ,  Yaqian ZHANG ,  Yang ZOU ,  Yugang LU ,  Shuai ZHANG ,  Hong CHEN ,  Daming CHEN ,  Yifeng CHEN

IPC分类号： H01L31/0288 ,  H01L31/0216

CPC分类号： H01L31/0288 ,  H01L31/02168

摘要： A solar cell is provided. The solar cell includes: an N-type silicon substrate having a first surface and a second surface, a tunnel passivation structure and a first passivation and anti-reflection film formed on the first surface, a boron-doped emitter structure layer including a first emitter layer and a second emitter region formed on the second surface, a second passivation and anti-reflection film formed on the emitter structure layer, a first electrode configured to be in electrical contact with the second emitter region, and a second electrode configured to be in electrical contact with the tunnel passivation structure. The solar cell of the present application has a selective emitter structure. The metal contact region has a large junction depth to meet the metallization requirements. The region outside the metal contact region has a small junction depth to improve the optical response.

公开(公告)号：US20240234599A1

公开(公告)日：2024-07-11

申请号：US18405661

申请日：2024-01-05

申请人： Semiconductor Manufacturing International (Beijing) Corporation ,  Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Dayong YAN ,  Changcheng GAO ,  Qiang SHI ,  Wei ZHANG

IPC分类号： H01L31/0236 ,  H01L31/0288 ,  H01L31/18

CPC分类号： H01L31/02366 ,  H01L31/0288 ,  H01L31/1804 ,  H01L31/1864

摘要： An image sensor includes a first substrate and a photoelectric structure in the first substrate. The first substrate includes opposite first surface and second surfaces. The conductivity type of the photoelectric structure is opposite to that of the first substrate. The photoelectric structure includes a second doped region and multiple first doped regions. Each of the first doped regions is connected to the second doped region. The distance from the second doped region to the first surface is smaller than the distance from the first doped region to the first surface. The size of the first doped region in a direction parallel to the first surface is smaller than or equal to the size of the second doped region in the direction. The quantum efficiency (QE), detection band, and photo-sensing capability are improved.

公开(公告)号：US20240055541A1

公开(公告)日：2024-02-15

申请号：US18493596

申请日：2023-10-24

申请人： ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

发明人： Jingsheng JIN ,  Bike ZHANG ,  Xinyu ZHANG

IPC分类号： H01L31/0236 ,  H01L31/0224 ,  H01L31/0288 ,  H01L31/0216

CPC分类号： H01L31/02363 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/022441 ,  H01L31/02167

摘要： The present disclosure provides a solar cell. The solar cell includes a substrate, where the substrate has a front surface and a rear surface, the rear surface includes a textured region and a flat region, a doped surface field is formed in the textured region of the substrate; a tunneling dielectric layer, where the tunneling dielectric layer is located on the flat region; a doped conductive layer, where the doped conductive layer is located on the tunnelling dielectric layer, the doped conductive layer has doping elements, and the doped conductive layer has the same type of the doping elements with the doped surface field; a rear electrode, where a part of a bottom portion of the rear electrode is located in the doped conductive layer and the part of the bottom portion of the rear electrode is in contact with the doped surface field.

公开(公告)号：US20240030371A1

公开(公告)日：2024-01-25

申请号：US18358052

申请日：2023-07-25

申请人： ZHEJIANG JINKO SOLAR CO., LTD.

发明人： Kun YU ,  Changming LIU ,  Xinyu ZHANG ,  Pengsong ZHAO ,  Dong WANG ,  Chao ZHOU

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0288

CPC分类号： H01L31/1804 ,  H01L31/02167 ,  H01L31/0288 ,  H01L31/1868

摘要： The present disclosure relates to a photovoltaic cell and a method for manufacturing a photovoltaic cell. The photovoltaic cell includes a substrate including an emitter and a passivation layer stacked in sequence on one side of the substrate. The emitter includes a first plane and a second plane laminated along a thickness direction of the emitter, and part of the emitter between the second plane and the first plane is a first doped layer. Within a unit volume, a rate of change ΔC1 between doping concentration of the second plane and doping concentration of the first plane satisfies: ΔC1≤15%.

公开(公告)号：US20230343885A1

公开(公告)日：2023-10-26

申请号：US17835049

申请日：2022-06-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsiang-Lin Chen ,  Sin-Yi Jiang ,  Sung-Wen Huang Chen ,  Yin-Kai Liao ,  Jung-I Lin ,  Yi-Shin Chu ,  Kuan-Chieh Huang

IPC分类号： H01L31/103 ,  H01L31/0288 ,  H01L31/18

CPC分类号： H01L31/103 ,  H01L31/0288 ,  H01L31/1804

摘要： Image sensors and methods of forming the same are provided. An image sensor according to the present disclosure includes a silicon substrate, a germanium region disposed in the silicon substrate, a doped semiconductor isolation layer disposed between the silicon substrate and the germanium region, a heavily p-doped region disposed on the germanium region, a heavily n-doped region disposed on the silicon substrate, a first n-type well disposed immediately below the germanium region, a second n-type well disposed immediately below the heavily n-doped region, and a deep n-type well disposed below and in contact with the first n-type well and the second n-type well.