公开(公告)号：US20240355940A1

公开(公告)日：2024-10-24

申请号：US18757693

申请日：2024-06-28

申请人： TRINA SOLAR CO., LTD.

发明人： Chengfa Liu ,  Hong Chen ,  Daming Chen ,  Zigang Wang ,  Wei Liu

IPC分类号： H01L31/0216 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/02167 ,  H01L31/035272 ,  H01L31/182

摘要： A solar cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate and a passivated contact structure. The passivated contact structure includes a first tunnel oxide layer, a polysilicon doped conductive layer, and a second tunnel oxide layer sequentially disposed on a surface of the substrate. A plurality of holes arranged spaced apart from each other are formed in at least a part of regions of the polysilicon doped conductive layer and the first tunnel oxide layer. Each of the holes extends through the polysilicon doped conductive layer and extends into the first tunnel oxide layer. The second tunnel oxide layer at least fills a portion of each of the holes that is located within the first tunnel oxide layer.

公开(公告)号：US20240363773A1

公开(公告)日：2024-10-31

申请号：US18767278

申请日：2024-07-09

申请人： TRINA SOLAR CO., LTD.

发明人： Zigang Wang ,  Kuiyi Wu

IPC分类号： H01L31/0288 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/0288 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/03682 ,  H01L31/182

摘要： A solar cell, a preparation method thereof, and a photovoltaic module. The solar cell includes a silicon substrate, a tunnel oxide layer, a first doped polysilicon layer, a laser-absorption layer, and a second doped polysilicon layer. The tunnel oxide layer is disposed on a surface of the silicon substrate. The first doped polysilicon layer is disposed on a surface of the tunnel oxide layer. A surface of the first doped polysilicon layer includes a metal contact region and a non-metal contact region. The laser-absorption layer is disposed on the metal contact region of the surface of the first doped polysilicon layer. The laser-absorption layer is adapted to be vaporized by absorbing a laser having a predetermined wavelength. The second doped polysilicon layer is disposed on a surface of the laser-absorption layer.

公开(公告)号：US20240347647A1

公开(公告)日：2024-10-17

申请号：US18757244

申请日：2024-06-27

申请人： TRINA SOLAR CO., LTD.

发明人： Chengfa Liu ,  Dongyun Lv ,  Daming Chen ,  Hong Chen ,  Zigang Wang ,  Wei Liu

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L31/02008 ,  H01L31/1864 ,  H01L31/1868

摘要： A preparation method of a passivated contact structure includes: forming a tunneling layer on a semiconductor substrate; forming an intrinsic semiconductor layer on the tunneling layer; forming a doped layer containing a dopant on the intrinsic semiconductor layer, and performing an activation treatment on the doped layer to diffuse the dopant in the doped layer into the intrinsic semiconductor layer to form a doped semiconductor layer. The tunneling layer and the doped semiconductor layer form the passivated contact structure.