公开(公告)号：US11901393B2

公开(公告)日：2024-02-13

申请号：US17184965

申请日：2021-02-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Jhy-Jyi Sze ,  Sin-Yi Jiang ,  Yi-Shin Chu ,  Yin-Kai Liao ,  Hsiang-Lin Chen ,  Kuan-Chieh Huang ,  Jung-I Lin

IPC分类号： H01L27/146 ,  G01S7/481

CPC分类号： H01L27/14649 ,  H01L27/1463 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14689 ,  H01L27/14698 ,  G01S7/4816

摘要： The present disclosure provides a semiconductor structure, including a substrate including a first material, wherein the first material generates electrical signals from radiation within a first range of wavelengths, an image sensor element including a second material, wherein the second material generates electrical signals from radiation within a second range of wavelengths, the second range is different from first range, a transparent layer proximal to a light receiving surface of the image sensor element, wherein the transparent layer is transparent to radiation within the second range of wavelength, and an interconnect structure connected to a signal transmitting surface of the image sensor element.

公开(公告)号：US20220302336A1

公开(公告)日：2022-09-22

申请号：US17383687

申请日：2021-07-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jhy-Jyi Sze ,  Sin-Yi Jiang ,  Yi-Shin Chu ,  Yin-Kai Liao ,  Hsiang-Lin Chen ,  Kuan-Chieh Huang

IPC分类号： H01L31/112 ,  H01L31/18

摘要： Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed in a silicon substrate, in some embodiments, or on a silicon substrate, in some embodiments. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair doped region pair in the germanium layer is configured as an e-lens of the germanium-based sensor.

公开(公告)号：US11908900B2

公开(公告)日：2024-02-20

申请号：US17869885

申请日：2022-07-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yin-Kai Liao ,  Sin-Yi Jiang ,  Hsiang-Lin Chen ,  Yi-Shin Chu ,  Po-Chun Liu ,  Kuan-Chieh Huang ,  Jyh-Ming Hung ,  Jen-Cheng Liu

IPC分类号： H01L29/10 ,  H01L29/167 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L29/1087 ,  H01L29/167 ,  H01L29/4933 ,  H01L29/6659

摘要： The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material. The second semiconductor material is a group IV semiconductor or a group III-V compound semiconductor. A passivation layer is disposed on the second semiconductor material. The passivation layer includes the first semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material.

公开(公告)号：US11855237B2

公开(公告)日：2023-12-26

申请号：US18151828

申请日：2023-01-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jhy-Jyi Sze ,  Sin-Yi Jiang ,  Yi-Shin Chu ,  Yin-Kai Liao ,  Hsiang-Lin Chen ,  Kuan-Chieh Huang

IPC分类号： H01L31/112 ,  H01L31/18 ,  H01L27/146 ,  H01L29/808 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L31/1129 ,  H01L27/14679 ,  H01L29/66893 ,  H01L29/808 ,  H01L31/112 ,  H01L31/1804 ,  H01L31/1864 ,  H01L29/1066

摘要： Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

公开(公告)号：US20230343885A1

公开(公告)日：2023-10-26

申请号：US17835049

申请日：2022-06-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsiang-Lin Chen ,  Sin-Yi Jiang ,  Sung-Wen Huang Chen ,  Yin-Kai Liao ,  Jung-I Lin ,  Yi-Shin Chu ,  Kuan-Chieh Huang

IPC分类号： H01L31/103 ,  H01L31/0288 ,  H01L31/18

CPC分类号： H01L31/103 ,  H01L31/0288 ,  H01L31/1804

摘要： Image sensors and methods of forming the same are provided. An image sensor according to the present disclosure includes a silicon substrate, a germanium region disposed in the silicon substrate, a doped semiconductor isolation layer disposed between the silicon substrate and the germanium region, a heavily p-doped region disposed on the germanium region, a heavily n-doped region disposed on the silicon substrate, a first n-type well disposed immediately below the germanium region, a second n-type well disposed immediately below the heavily n-doped region, and a deep n-type well disposed below and in contact with the first n-type well and the second n-type well.

公开(公告)号：US20230163231A1

公开(公告)日：2023-05-25

申请号：US18151828

申请日：2023-01-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jhy-Jyi Sze ,  Sin-Yi Jiang ,  Yi-Shin Chu ,  Yin-Kai Liao ,  Hsiang-Lin Chen ,  Kuan-Chieh Huang

IPC分类号： H01L31/112 ,  H01L31/18 ,  H01L27/146 ,  H01L29/808

CPC分类号： H01L31/1129 ,  H01L27/14679 ,  H01L29/808 ,  H01L31/1804 ,  H01L31/1864

摘要： Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

公开(公告)号：US11600737B2

公开(公告)日：2023-03-07

申请号：US17383687

申请日：2021-07-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jhy-Jyi Sze ,  Sin-Yi Jiang ,  Yi-Shin Chu ,  Yin-Kai Liao ,  Hsiang-Lin Chen ,  Kuan-Chieh Huang

IPC分类号： H01L31/112 ,  H01L31/18 ,  H01L27/146 ,  H01L29/808

摘要： Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed in a silicon substrate, in some embodiments, or on a silicon substrate, in some embodiments. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

公开(公告)号：US12125934B2

公开(公告)日：2024-10-22

申请号：US17213961

申请日：2021-03-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Yi-Shin Chu ,  Hsiang-Lin Chen ,  Yin-Kai Liao ,  Sin-Yi Jiang ,  Kuan-Chieh Huang

IPC分类号： H01L31/18 ,  H01L31/02

CPC分类号： H01L31/1812 ,  H01L31/02016 ,  H01L31/1864 ,  H01L31/1868

摘要： A method of manufacturing a semiconductor structure includes: forming a light-absorption layer in a substrate; forming a first doped region of a first conductivity type and a second doped region of a second conductivity type in the light-absorption layer adjacent to the first doped region; depositing a first patterned mask layer over the light-absorption layer, wherein the first patterned mask layer includes an opening exposing the second doped region and covers the first doped region; forming a first silicide layer in the opening on the second doped region; depositing a barrier layer over the first doped region; and annealing the barrier layer to form a second silicide layer on the first doped region.

公开(公告)号：US20240363672A1

公开(公告)日：2024-10-31

申请号：US18363950

申请日：2023-08-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsiang-Lin Chen ,  Yi-Shin Chu ,  Yin-Kai Liao ,  Sin-Yi Jiang ,  Sung-Wen Huang Chen

IPC分类号： H01L27/148 ,  H01L27/146

CPC分类号： H01L27/14825 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/14806

摘要： Various embodiments of the present disclosure are directed towards a semiconductor structure including a first substrate comprising a first semiconductor material. A first light sensor is disposed within the first substrate. The first light sensor is configured to absorb electromagnetic radiation within a first wavelength range. A second light sensor is disposed within an absorption structure underlying the first substrate. The second light sensor is configured to absorb electromagnetic radiation within a second wavelength range different from the first wavelength range. The absorption structure underlies the first light sensor and comprises a second semiconductor material different from the first semiconductor material.

公开(公告)号：US20240355843A1

公开(公告)日：2024-10-24

申请号：US18360115

申请日：2023-07-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Po-Chun Liu ,  Yi-Shin Chu ,  Sin-Yi Jiang

IPC分类号： H01L27/146

CPC分类号： H01L27/1461 ,  H01L27/14649 ,  H01L27/14689

摘要： Various embodiments of the present disclosure are directed towards an integrated chip including a substrate comprising a first semiconductor material and a recess in a top surface of the substrate. An absorption structure is disposed within the recess and comprising a second semiconductor material different from the first semiconductor material. The absorption structure has a first doping type. A vertical well region is disposed within the substrate and underlies the absorption structure. The vertical well region has a second doping type different from the first doping type. A liner layer is disposed between the absorption structure and the substrate. The liner layer comprises the second semiconductor material and separates the vertical well region from the absorption structure.