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1.发明公开公开(公告)号：US20240204128A1
公开(公告)日：2024-06-20
申请号：US18428200
申请日：2024-01-31
发明人： Qinghui Shao , Lars F. Voss , Soroush Ghandiparsi
IPC分类号： H01L31/112 , H01L31/0216 , H01L31/028
CPC分类号： H01L31/1126 , H01L31/02161 , H01L31/02164 , H01L31/028
摘要： Devices, methods and techniques related to high voltage and high-power diamond transistors are disclosed. In one example aspect, a switch operable under high-voltage and high-power includes a P-type diamond layer doped with an acceptor material and an N-type diamond region doped with a donor material. The P-type diamond layer is at least partially embedded the N-type diamond region. The switch includes a layer comprising one or more apertures configured to allow illumination from a light source to pass through to reach the N-type diamond region, a source contact and a drain contact that are at least partially in contact with the P-type diamond layer; and a gate in contact with at least an area of the N-type diamond region.
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公开(公告)号：US11921141B2
公开(公告)日：2024-03-05
申请号：US17191443
申请日：2021-03-03
IPC分类号： H01L31/112 , G01R29/08 , G01R31/28 , H01L31/02 , H01L31/101 , H10N60/12
CPC分类号： G01R29/0878 , G01R31/2824 , H01L31/02019 , H01L31/1013 , H01L31/112 , H10N60/12
摘要： A graphene-based broadband radiation sensor and methods for operation thereof are disclosed. The radiation sensor includes an electrical signal path for carrying electrical signals and one or more resonance structures connected to the electrical signal path. Each resonance structure includes a resonator having a resonant frequency. Each resonance structure also includes a graphene junction connected in series with the resonator, the graphene junction including a graphene layer and having an impedance that is dependent on a temperature of the graphene layer. Each resonance structure further includes a heating element that is thermally coupled to the graphene layer and is configured to receive an incident photon, where the temperature of the graphene layer increases in response to the heating element receiving the incident photon.
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公开(公告)号：US11881496B2
公开(公告)日：2024-01-23
申请号：US17246064
申请日：2021-04-30
发明人： Jameyung Kim , Tae-Hun Lee , Dongmo Im , Kwansik Cho
IPC分类号： H01L31/112 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/1462 , H01L27/1464 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14645 , H01L27/14689
摘要： An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.
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公开(公告)号：US11862743B2
公开(公告)日：2024-01-02
申请号：US17459686
申请日：2021-08-27
发明人： Chanwook Baik , Kyungsang Cho , Hojung Kim , Yooseong Yang
IPC分类号： H01L31/0384 , H01L31/112 , H01L31/113 , H01L31/0216 , H01L27/146 , H01L31/0336
CPC分类号： H01L31/03845 , H01L27/14643 , H01L27/14679 , H01L31/02161 , H01L31/1126 , H01L31/1136 , H01L31/0336
摘要： An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.
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公开(公告)号：US11855236B2
公开(公告)日：2023-12-26
申请号：US18151770
申请日：2023-01-09
发明人： Kyung Bae Park , Sung Jun Park , Feifei Fang , Sung Young Yun , Seon-Jeong Lim , Chul Joon Heo
IPC分类号： H01L31/112 , H01L31/0224 , H01L31/0256
CPC分类号： H01L31/1121 , H01L31/0256 , H01L31/022408
摘要： A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.
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公开(公告)号：US11777040B2
公开(公告)日：2023-10-03
申请号：US18070311
申请日：2022-11-28
IPC分类号： H01L31/0216 , H01L31/0232 , H01L27/146 , H01L31/112
CPC分类号： H01L31/02162 , H01L27/14643 , H01L27/14683 , H01L31/0232 , H01L31/1125 , Y02E10/50 , Y02P70/50
摘要： A semiconductor device includes a substrate, a photo sensing region, and a plurality of semiconductor plugs. The photo sensing region is in the substrate. The photo sensing region forms a p-n junction with the substrate. The semiconductor plugs extend from above the photo sensing region into the photo sensing region.
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公开(公告)号：US20230232681A1
公开(公告)日：2023-07-20
申请号：US18121646
申请日：2023-03-15
发明人： Gyungmin BAEK , Juhyun LEE , Hongsick PARK , Hyuneok SHIN
IPC分类号： H01L31/112
CPC分类号： H10K59/131 , H10K71/00 , H10K59/1201 , H10K50/844
摘要： A method of manufacturing a display panel includes forming a circuit layer including a gate, a source, and a drain on a base substrate and forming a light emitting element layer on the circuit layer. The forming of the circuit layer includes sequentially forming a preliminary metal layer, a preliminary oxide layer comprising molybdenum and tantalum, and a preliminary capping layer which comprise a preliminary electrode layer, cleaning the preliminary electrode layer, forming a photoresist layer pattern on the preliminary electrode layer, etching the preliminary electrode layer, and removing the photoresist layer pattern. During the etching of the preliminary electrode layer, a ratio between a removal speed ER1 of the preliminary oxide layer and a removal speed ER2 of the preliminary metal layer satisfies Equation 1 to maintain a low reflection property
1≤ER2/ER1≤3. [Equation 1]-
8.发明公开公开(公告)号：US20230163231A1
公开(公告)日：2023-05-25
申请号：US18151828
申请日：2023-01-09
发明人： Jhy-Jyi Sze , Sin-Yi Jiang , Yi-Shin Chu , Yin-Kai Liao , Hsiang-Lin Chen , Kuan-Chieh Huang
IPC分类号： H01L31/112 , H01L31/18 , H01L27/146 , H01L29/808
CPC分类号： H01L31/1129 , H01L27/14679 , H01L29/808 , H01L31/1804 , H01L31/1864
摘要： Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.
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9.发明授权公开(公告)号：US11600737B2
公开(公告)日：2023-03-07
申请号：US17383687
申请日：2021-07-23
发明人： Jhy-Jyi Sze , Sin-Yi Jiang , Yi-Shin Chu , Yin-Kai Liao , Hsiang-Lin Chen , Kuan-Chieh Huang
IPC分类号： H01L31/112 , H01L31/18 , H01L27/146 , H01L29/808
摘要： Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed in a silicon substrate, in some embodiments, or on a silicon substrate, in some embodiments. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.
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公开(公告)号：US11563190B2
公开(公告)日：2023-01-24
申请号：US17116674
申请日：2020-12-09
申请人： Huanhuan Gu
发明人： Huanhuan Gu
IPC分类号： H01L51/44 , H01Q1/22 , H01L27/30 , H01L31/0224 , H01L29/16 , H01L29/66 , H01L31/112 , H01L51/42
摘要： Various graphene-based photodetectors are disclosed. An example photodetector device may include: a substrate; a first antenna component fabricated on the substrate, the first antenna component comprising one or more antenna electrodes; a second antenna component fabricated on the substrate, the second antenna component comprising one or more antenna electrodes; a source region coupled to the first antenna component and the substrate; and a drain region coupled to the second antenna component and the substrate; wherein the one or more antenna electrodes in the first antenna component and the second antenna component are made of graphene.
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