公开(公告)号：US12119362B2

公开(公告)日：2024-10-15

申请号：US17185129

申请日：2021-02-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Sanshiro Shishido ,  Shinichi Machida ,  Takeyoshi Tokuhara ,  Katsuya Nozawa

IPC: H01L27/14 ,  G02B5/20 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/0384 ,  H01L27/142 ,  H01L31/0256

CPC classification number: H01L27/14625 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14667 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/03845 ,  H01L27/142 ,  H01L27/14643 ,  H01L2031/0344

Abstract: A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.

公开(公告)号：US20240079515A1

公开(公告)日：2024-03-07

申请号：US18388286

申请日：2023-11-09

Applicant: AZUR SPACE Solar Power GmbH

Inventor： Alexander FREY ,  Benjamin HAGEDORN

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0384

CPC classification number: H01L31/1808 ,  H01L31/02167 ,  H01L31/02245 ,  H01L31/0384 ,  H01L31/1852 ,  H01L31/1868 ,  Y02E10/544

Abstract: A method for structuring an insulating layer on a semiconductor wafer includes providing a semiconductor wafer with a top, a bottom and includes multiple solar cell stacks, wherein each solar cell stack is a Ge substrate, which forms the bottom of the semiconductor wafer, a Ge subcell and at least two III-V subcells, in the above order, and at least one passage opening, which extends from the top to the bottom of the semiconductor wafer and has a connected side wall, an insulating layer two-dimensionally deposited on the top of the semiconductor wafer, on the side wall of the passage opening and/or on the bottom of the semiconductor wafer, and the deposition of an etch-resistant filling material by means of a printing process on an area of the top which include the passage opening, and into the passage opening.

公开(公告)号：US11456392B2

公开(公告)日：2022-09-27

申请号：US16617473

申请日：2018-06-01

Applicant: The Regents of the University of California

Inventor： Mona Jarrahi ,  Semih Cakmakyapan

IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0384 ,  H01L31/113 ,  H01L31/0352 ,  H02S10/30

Abstract: Nanocomposites in accordance with many embodiments of the invention can be capable of converting electromagnetic radiation to an electric signal, such as signals in the form of current or voltage. In some embodiments, metallic nanostructures are integrated with graphene material to form a metallo-graphene nanocomposite. Graphene is a material that has been explored for broadband and ultrafast photodetection applications because of its distinct optical and electronic characteristics. However, the low optical absorption and the short carrier lifetime of graphene can limit its use in many applications. Nanocomposites in accordance with various embodiments of the invention integrates metallic nanostructures, such as (but not limited to) plasmonic nanoantennas and metallic nanoparticles, with a graphene-based material to form metallo-graphene nanostructures that can offer high responsivity, ultrafast temporal responses, and broadband operation in a variety of optoelectronic applications.

公开(公告)号：US20220262968A1

公开(公告)日：2022-08-18

申请号：US17459686

申请日：2021-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chanwook Baik ,  Kyungsang Cho ,  Hojung Kim ,  Yooseong Yang

IPC: H01L31/0384 ,  H01L31/112 ,  H01L31/113 ,  H01L27/146 ,  H01L31/0216

Abstract: An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.

公开(公告)号：US11302740B2

公开(公告)日：2022-04-12

申请号：US16930574

申请日：2020-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungsang Cho ,  Chanwook Baik ,  Hojung Kim

IPC: H01L31/0352 ,  H01L31/0384 ,  H01L31/112 ,  H01L27/146

Abstract: Provided is an opto-electronic device having low dark noise and a high signal-to-noise ratio. The opto-electronic device may include: a first semiconductor layer doped to have a first conductivity type; a second semiconductor layer disposed on an upper surface of the first semiconductor layer and doped to have a second conductivity type electrically opposite to the first conductivity type; a transparent matrix layer disposed on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.

公开(公告)号：US20210396916A1

公开(公告)日：2021-12-23

申请号：US17289386

申请日：2019-10-30

Applicant: University of Kansas

Inventor： Judy Z. Wu

IPC: G02B5/00 ,  H01L31/0232 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/0384 ,  H01L31/18

Abstract: Plasmonic substrates are provided which may be used in a variety of optoelectronic devices, e.g., biosensors and photodetectors. The plasmonic substrate may comprise a layer of graphene and a plurality of discrete, individual transition metal chalcogenide nanodomes distributed on a surface of the layer of graphene, each nanodome surrounded by bare graphene. Methods for making and using the plasmonic substrates are also provided.

公开(公告)号：US11011716B2

公开(公告)日：2021-05-18

申请号：US15667312

申请日：2017-08-02

Applicant: King Abdullah University of Science and Technology

Inventor： Jr-Hau He ,  Meng-Lin Tsai

IPC: H01L51/42 ,  H01L51/44 ,  H01L31/0445 ,  H01L51/00 ,  H01L21/02 ,  H01L31/0384

Abstract: Embodiments of the present disclosure describe a photodetector and/or photovoltaic device comprising a semiconducting substrate and a solution including at least GQD and PEDOT:PSS, the solution deposited as a layer on the semiconducting substrate. Embodiments of the present disclosure further describe a method of fabricating a photodetector and/or photovoltaic device comprising contacting an amount of GQD with PEDOT:PSS sufficient to form a solution; and depositing the solution as a layer on a semiconducting substrate.

公开(公告)号：US20210078071A1

公开(公告)日：2021-03-18

申请号：US17096833

申请日：2020-11-12

Applicant: Epro Development Limited

Inventor： Albert Pui Sang LAU ,  Lee Cheung LAU

IPC: B22F1/00 ,  C01B33/021 ,  D06M11/83 ,  B22F9/04 ,  B22F9/08 ,  C22C1/04 ,  H01M4/134 ,  H01M4/38 ,  H01L31/028 ,  H01L31/0384 ,  H01L31/0392

Abstract: A process for producing silicon nano-particles from a raw silicon material, the process including steps of alloying the raw silicon material with at least one alloying metal to form an alloy; thereafter, processing the alloy to form alloy nano-particles; and thereafter, distilling the alloying metal from the alloy nano-particles whereby silicon nano-particles are produced.

公开(公告)号：US10886421B2

公开(公告)日：2021-01-05

申请号：US14746114

申请日：2015-06-22

Applicant: FUJIFILM Corporation

Inventor： Masashi Ono ,  Makoto Kikuchi ,  Atsushi Tanaka ,  Masayuki Suzuki ,  Yoshihiko Kanemitsu

IPC: H01L31/0352 ,  H01L31/032 ,  H01L29/24 ,  H01L29/12 ,  H01L29/66 ,  H01L21/02 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/26 ,  H01L31/0384 ,  H01L29/786 ,  C09K11/02 ,  C09K11/66 ,  H01L31/074

Abstract: A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and a ligand that is coordinated to the semiconductor quantum dots and that is represented by the following Formula (A): wherein, in Formula (A), X1 represents NH, S, or O; each of X2 and X3 independently represents NH2, SH, or OH; and each of n and m independently represents an integer from 1 to 3.

公开(公告)号：US10726627B2

公开(公告)日：2020-07-28

申请号：US15909162

申请日：2018-03-01

Applicant: Facebook Technologies, LLC

Inventor： Xinqiao Liu

IPC: G06T19/00 ,  G06F3/01 ,  G06T7/73 ,  G02B27/01 ,  G06K9/00 ,  G06K9/62 ,  G06K9/64 ,  G06K9/46 ,  H04N5/378 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/0384 ,  H01L27/28 ,  H01L27/30

Abstract: A sensor assembly for determining one or more features of a local area is presented herein. The sensor assembly includes a plurality of stacked sensor layers. A first sensor layer of the plurality of stacked sensor layers located on top of the sensor assembly includes an array of pixels. The top sensor layer can be configured to capture one or more images of light reflected from one or more objects in the local area. The sensor assembly further includes one or more sensor layers located beneath the top sensor layer. The one or more sensor layers can be configured to process data related to the captured one or more images. A plurality of sensor assemblies can be integrated into an artificial reality system, e.g., a head-mounted display.