公开(公告)号：US20240339964A1

公开(公告)日：2024-10-10

申请号：US18745582

申请日：2024-06-17

申请人： THE ADMINISTRATORS OF THE TULANE EDUCATIONAL FUND

发明人： Matthew David ESCARRA ,  Luke ARTZT ,  Yaping JI ,  Daniel CODD ,  Matthew BARRIOS ,  Kazi M. ISLAM ,  David M. BAR-OR ,  Jacqueline C. FAILLA ,  Claire C. DAVIS ,  Maxwell W. WOODY

IPC分类号： H02S40/44 ,  F24S10/70 ,  F24S20/20 ,  F24S23/72 ,  F24S30/452 ,  F24S70/65 ,  H01L31/0304 ,  H01L31/0336 ,  H01L31/05 ,  H01L31/06

CPC分类号： H02S40/44 ,  F24S10/744 ,  F24S20/20 ,  F24S70/65 ,  F24S23/72 ,  F24S30/452 ,  H01L31/03046 ,  H01L31/0336 ,  H01L31/0512 ,  H01L31/06

摘要： A method for concentrated photovoltaic-thermal power generation includes converting a first portion of concentrated sunlight into electrical power when the first portion of concentrated sunlight illuminates an array of photovoltaic cells; and thermally coupling heat generated by the photovoltaic cells into a heat transfer plate. The method also includes cooling the heat transfer plate by flowing heat transfer fluid through an internal path of a cooling block in direct thermal contact with the heat transfer plate; and flowing the heat transfer fluid through a helical tube to absorb thermal energy from a second portion of concentrated sunlight illuminating the helical tube.

公开(公告)号：US20240290901A1

公开(公告)日：2024-08-29

申请号：US18174359

申请日：2023-02-24

申请人： City University of Hong Kong

发明人： Chung Yin Johnny HO ,  Weijun WANG ,  You MENG ,  Wei WANG

IPC分类号： H01L31/109 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/109 ,  H01L31/0336 ,  H01L31/035209 ,  H01L31/035227 ,  H01L31/1896

摘要： Continuous miniaturization of semiconductor devices is the key to boosting modern electronics development. However, such downscaling strategy has been rarely utilized in photoelectronics and photovoltaics. Here, in this work, a full-vdWs 1D p-Te/2D n-Bi2O2Se heterodiode with a rationally-designed nanoscale ultra-photosensitive channel is reported. Enabled by the dangling bond-free mixed-dimensional vdWs integration, the Te/Bi2O2Se type-II diodes show a high rectification ratio of 3.6×104. Operating with 100 mV reverse bias or in a self-power mode, the photodiodes demonstrated excellent photodetection performances, including high responsivities of 130 A W−1 (100 mV bias) and 768.8 mA W−1 (self-power mode), surpassing most of the reports of other heterostructures. More importantly, a superlinear photoelectric conversion phenomenon is uncovered in these nanoscale full-vdWs photodiodes, in which a model based on the in-gap trap-assisted recombination is proposed for this superlinearity. All these results provide valuable insights in light-matter interactions for further performance enhancement of photoelectronic devices.

公开(公告)号：US20240213391A1

公开(公告)日：2024-06-27

申请号：US18146150

申请日：2022-12-23

申请人： City University of Hong Kong

发明人： Chung Yin Johnny HO ,  Wei WANG ,  Weijun WANG ,  You MENG

IPC分类号： H01L31/113 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/1136 ,  H01L31/03046 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/18

摘要： Mixed-dimensional heterostructure nano-devices with multi-functionality for use in semiconductors. Specifically, a gate-tunable and anti-ambipolar phototransistor is devised based on 1D p-type GaAsSb nanowire/2D n-type MoS2 nanoflake mixed-dimensional van der Waals (vdW) heterojunctions. Methods of making the mixed-dimensional heterostructure nano-devices with multi-functionality, gate-tunability and anti-ambipolar phototransistor.

公开(公告)号：US11855118B2

公开(公告)日：2023-12-26

申请号：US18066744

申请日：2022-12-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chia-Yu Wei ,  Yen-Liang Lin ,  Kuo-Cheng Lee ,  Hsun-Ying Huang ,  Hsin-Chi Chen

IPC分类号： H01L27/146 ,  H01L31/103 ,  H01L31/0352 ,  H01L31/0336 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/0304 ,  H01L31/0296

CPC分类号： H01L27/14649 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14698 ,  H01L31/035272 ,  H01L31/103 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0336

摘要： An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer, and a color filter layer. The semiconductor substrate has a photosensitive region and an isolation region surrounding the photosensitive region. The radiation sensing member is embedded in the photosensitive region of the semiconductor substrate. The radiation sensing member has a material different from a material of the semiconductor substrate, and an interface between the radiation sensing member and the isolation region of the semiconductor substrate includes a direct band gap material. The device layer is under the semiconductor substrate and the radiation sensing member. The color filter layer is over the radiation sensing member and the semiconductor substrate.

公开(公告)号：US20230215965A1

公开(公告)日：2023-07-06

申请号：US18181607

申请日：2023-03-10

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

发明人： Kazushige Yamamoto ,  Yukitami Mizuno ,  Yuya Honishi ,  Soichiro Shibasaki ,  Naoyuki Nakagawa ,  Yasutaka Nishida ,  Mutsuki Yamazaki

IPC分类号： H01L31/0687 ,  H01L31/0336

CPC分类号： H01L31/0687 ,  H01L31/0336

摘要： A solar cell according to an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide or/and a complex oxide of cuprous oxides as a main component on the p-electrode, an n-type layer containing an oxide containing Ga on the p-type light-absorbing layer, and an n-electrode. A first region is included between the p-type light-absorbing layer and the n-type layer. The first region is a region from a depth of 2 nm from an interface between the p-type light-absorbing layer and the n-type layer toward the p-type light absorbing layer to a depth of 2 nm from the interface between the p-type light-absorbing layer and the n-type layer toward the n-type layer. Cu, Ga, M1, and O are contained in the first region. M1 is one or more elements selected from the group consisting of Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, and Ca. A ratio of Cu, Ga, M1, and O is a1:b1:c1:d1. a1, b1, c1, and d1 satisfy 1.80≤a1≤2.20, 0.005≤b1≤0.05, 0≤c1≤0.20, and 0.60≤d1≤1.00.

公开(公告)号：US20190109247A1

公开(公告)日：2019-04-11

申请号：US15728417

申请日：2017-10-09

申请人： Teledyne Scientific & Imaging, LLC

发明人： Majid Zandian

IPC分类号： H01L31/0352 ,  H01L31/0216 ,  H01L31/0296 ,  H01L31/0336 ,  H01L31/18

CPC分类号： H01L31/035281 ,  G01J1/42 ,  H01L31/02161 ,  H01L31/02966 ,  H01L31/0336 ,  H01L31/03529 ,  H01L31/1032 ,  H01L31/1832 ,  H01L31/1868 ,  H01L31/1892

摘要： A light sensor includes an N-type semiconductor. The light sensor further includes a P-type semiconductor stacked on at least a portion of the N-type semiconductor, partially defining a trench extending into the P-type semiconductor, and having a trench portion aligned with the trench and extending farther into the N-type semiconductor than other portions of the P-type semiconductor. The light sensor also includes a passivation layer stacked on and contacting the P-type semiconductor and partially defining the trench that extends through the passivation layer and into the P-type semiconductor. The light sensor further includes an electrical contact stacked on the passivation layer, positioned within the trench, and extending through the passivation layer into the P-type semiconductor such that photons received by the N-type semiconductor generate photocurrent resulting in a voltage at the electrical contact.

公开(公告)号：US20180198015A1

公开(公告)日：2018-07-12

申请号：US15741783

申请日：2016-07-06

申请人： The Hong Kong University of Science and Technology

发明人： Qinglin He ,  Ying Hoi Lai ,  Yi Liu ,  Iam Keong Sou

IPC分类号： H01L31/108 ,  H01L31/0336 ,  H01L31/0224 ,  H01L31/18 ,  H01L21/66

CPC分类号： H01L31/108 ,  H01L21/02395 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02631 ,  H01L22/26 ,  H01L29/122 ,  H01L29/22 ,  H01L29/267 ,  H01L31/00 ,  H01L31/022408 ,  H01L31/022491 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/036 ,  H01L31/18

摘要： A diode, UV radiation detector, and method of manufacturing semiconductor device that includes a diode with a substrate having a first side and a second side. The diode includes an active layer having a rocksalt phase crystalline structure of CaS disposed on the first side of the substrate, and an electrical contact disposed on the second side of the substrate. The diode also includes a semi-transparent conducting layer disposed on the active layer. The UV radiation detector includes the diode and circuitry connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector may detect radiation having a wavelength between 220 and 280 nm. The substrate may have a lattice mismatch between 0.47% and 12.6% with respect to the active layer.

公开(公告)号：US20170236968A1

公开(公告)日：2017-08-17

申请号：US15181804

申请日：2016-06-14

申请人： Samsung Electronics Co., Ltd.

发明人： Jinseong HEO ,  Kiyoung Lee ,  Jaeho Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Seongjun Park

IPC分类号： H01L31/109 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/0336

CPC分类号： H01L31/109 ,  H01L31/02161 ,  H01L31/022466 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/072 ,  Y02E10/50

摘要： A photoelectronic device includes a semiconductor substrate doped with a first type impurity, a second semiconductor layer doped with a second type impurity of an opposite type to the first type impurity, a transparent electrode formed on a second surface of the second semiconductor layer, the second surface being opposite a first surface on which the semiconductor substrate is formed, and a barrier layer disposed between the second semiconductor layer and the semiconductor substrate or between the second semiconductor layer and the transparent electrode. The second semiconductor layer has a band gap energy less than that of the semiconductor substrate, and the barrier layer includes a semiconductor material or an insulator having a band gap greater than that of the semiconductor substrate.

公开(公告)号：US20170194527A1

公开(公告)日：2017-07-06

申请号：US15356152

申请日：2016-11-18

申请人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

发明人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L31/0336 ,  H01L27/144 ,  H01L31/0232

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

公开(公告)号：US09608028B2

公开(公告)日：2017-03-28

申请号：US14903700

申请日：2014-07-08

申请人： Rayence Co., Ltd. ,  Vatech Ewoo Holdings Co., Ltd.

发明人： Tae Woo Kim ,  Dong Jin Lee

IPC分类号： H01L27/146 ,  H01L31/0264 ,  H01L31/0296 ,  H01L31/0224 ,  H01L31/0336

CPC分类号： H01L27/14676 ,  H01L27/14601 ,  H01L27/14636 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14696 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0336

摘要： Disclosed is an image sensor, which is characterized by increased strength of adhesion between a photoconductive layer and a front electrode made of aluminum, and which includes a first electrode composed of aluminum, copper or an aluminum-copper alloy on a substrate, a buffer layer formed on the first electrode, a photoconductive layer formed on the buffer layer, and a second electrode formed on the photoconductive layer, wherein the buffer layer includes a material having higher strength of adhesion than the photoconductive layer to the first electrode.