公开(公告)号：US09881966B2

公开(公告)日：2018-01-30

申请号：US14802014

申请日：2015-07-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Shu-Jen Han

IPC: H01L27/146 ,  H01L31/0296 ,  H01L31/032

CPC classification number: H01L27/14652 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14696 ,  H01L31/0296 ,  H01L31/032

Abstract: A three-dimensional multispectral imaging sensor and method for forming a three-dimensional multispectral imaging sensor are provided. The three-dimensional multispectral imaging sensor includes a monolithic structure having a plurality of layers. Each of the layers is formed from light detecting materials for detecting light of respective different non-overlapping wavelengths and having respective different bandgaps.

公开(公告)号：US09847369B2

公开(公告)日：2017-12-19

申请号：US15014707

申请日：2016-02-03

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Uri El-Hanany ,  Adam Densmore ,  Saeid Taherion ,  Georgios Prekas ,  Veeramani Perumal

IPC: H01L27/14 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L27/14696 ,  H01L27/14658 ,  H01L27/14661 ,  H01L27/14687 ,  H01L27/14698 ,  H01L31/022408 ,  H01L31/1832

Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.

公开(公告)号：US20170309663A1

公开(公告)日：2017-10-26

申请号：US15491538

申请日：2017-04-19

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Johan ROTHMAN

IPC: H01L27/146 ,  H01L31/0296

CPC classification number: H01L27/14607 ,  H01L27/1446 ,  H01L27/14636 ,  H01L27/14696 ,  H01L31/02966 ,  H01L31/1032

Abstract: The invention relates to a photodetection device comprising a substrate and a diodes network, the substrate comprising an absorption layer (1) and each diode comprising a collection region with a first type of doping in the absorption layer (2). The device comprises a conduction mesh (7) under the surface of the substrate, comprising at least one conduction channel inserted between the collection regions (2) of two adjacent diodes, the at least one conduction channel (7) having a second doping type opposite the first type and a higher doping density than the absorption layer. The doping density of the at least one conduction channel (7) is derived from metal diffusion in the absorption layer from a metal mesh present on the substrate surface. The absorption layer has the first doping type. The invention also relates to a method of making such a device.

公开(公告)号：US09691808B2

公开(公告)日：2017-06-27

申请号：US14798972

申请日：2015-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunil Kim ,  Dongwook Lee ,  Changbum Lee ,  Jaechul Park

IPC: H01L27/146

CPC classification number: H01L27/14676 ,  H01L27/14632 ,  H01L27/14696

Abstract: A radiation detector may include: a common electrode; a thin film transistor (TFT) array; a photoconductor material layer disposed between the common electrode and the TFT array; and a diffusion stop layer, disposed between the common electrode and the TFT array, on a location corresponding to a connecting portion where the common electrode is connected to a bias voltage supply source, wherein the diffusion stop layer prevents a metal included in the connecting portion from diffusing to the photoconductor material layer.

公开(公告)号：US20170108594A1

公开(公告)日：2017-04-20

申请号：US15391207

申请日：2016-12-27

Applicant: JX NIPPON MINING & METALS CORPORATION

Inventor： Masaomi Murakami ,  Makoto Mikami ,  Kouji Murakami ,  Akira Noda ,  Toru Imori

IPC: G01T1/24 ,  H01L31/02 ,  H01L31/115 ,  H01L31/0224

CPC classification number: G01T1/24 ,  H01L24/05 ,  H01L24/06 ,  H01L24/09 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L27/14696 ,  H01L31/02005 ,  H01L31/022408 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/08 ,  H01L31/115 ,  H01L2224/0345 ,  H01L2224/03464 ,  H01L2224/0558 ,  H01L2224/05583 ,  H01L2224/05584 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664

Abstract: The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

公开(公告)号：US20170104025A1

公开(公告)日：2017-04-13

申请号：US15279735

申请日：2016-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoto KUSUMOTO

IPC: H01L27/146 ,  H04N5/232 ,  H04N5/225

CPC classification number: H01L27/14641 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14663 ,  H01L27/14692 ,  H01L27/14696 ,  H01L29/7869 ,  H01L31/0272 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/23293 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/376 ,  H04N5/378

Abstract: An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A transistor is provided between a power supply line and a photoelectric conversion element. Exposure is performed by turning on the transistor. Imaging data is retained in a charge retention portion by turning off the transistor.

公开(公告)号：US20170041517A1

公开(公告)日：2017-02-09

申请号：US15220486

申请日：2016-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki IKEDA

IPC: H04N5/225 ,  H01L29/786 ,  H01L27/146

CPC classification number: H04N5/2253 ,  H01L27/1225 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14616 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14692 ,  H01L27/14696 ,  H01L29/78648 ,  H01L29/7869 ,  H01L2224/48091 ,  H04N5/369 ,  H04N5/374 ,  H01L2924/00014

Abstract: An imaging device with low power consumption is provided. A pixel circuit has a configuration of detecting difference data between data of a reference frame and data of a target frame in a pixel, and a peripheral circuit has a configuration of efficiently converting the difference data by A/D conversion so as to obtain high compressibility. Difference data which is encoded by compression is written into a memory element and read sequentially. At this time, the frequency of a clock signal can be lowered in accordance with the amount of data. The read data is expanded and the expanded data is added to the reference frame to constitute an image.

Abstract translation: 提供低功耗的成像装置。 像素电路具有检测像素中的参考帧的数据和目标帧的数据之间的差异数据的结构，并且外围电路具有通过A / D转换有效地转换差分数据以便获得高的压缩性 。 通过压缩编码的差分数据被写入到存储元件中并顺序读取。 此时，可以根据数据量降低时钟信号的频率。 读取的数据被扩展并且扩展的数据被添加到参考帧以构成图像。

公开(公告)号：US20160300879A1

公开(公告)日：2016-10-13

申请号：US15036104

申请日：2014-10-16

Applicant: SONY CORPORATION

Inventor： KOUICHI HARADA ,  KYOKO IZUHA ,  KOJI KADONO

IPC: H01L27/146

CPC classification number: H01L27/14647 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/14696 ,  H01L27/14698 ,  H01L31/10

Abstract: Provided is an imaging element including: a light receiving element 20; and a stacked structure body 130 that is placed on a light incident side of the light receiving element 20 and in which a semiconductor layer 131 and a nanocarbon film 132 to which a prescribed electric potential is applied are stacked from the light receiving element side. The semiconductor layer 131 is made of a wide gap semiconductor with an electron affinity of 3.5 eV or more, or is made of a semiconductor with a band gap of 2.0 eV or more and an electron affinity of 3.5 eV or more.

Abstract translation: 提供了一种成像元件，包括：光接收元件20; 并且从光接收元件侧堆叠放置在光接收元件20的光入射侧并且施加有规定电位的半导体层131和纳米碳膜132的层叠结构体130。 半导体层131由电子亲和力为3.5eV以上的宽间隙半导体构成，或者由带隙为2.0eV以上且电子亲和度为3.5eV以上的半导体构成。

公开(公告)号：US20160249000A1

公开(公告)日：2016-08-25

申请号：US15145032

申请日：2016-05-03

Applicant: Rohm Co., Ltd.

Inventor： Takashi Esumi

IPC: H04N5/378 ,  H04N5/376 ,  H04N5/225

CPC classification number: H04N5/378 ,  G06F17/30029 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14665 ,  H01L27/14685 ,  H01L27/14696 ,  H01L31/0322 ,  H04N5/2253 ,  H04N5/33 ,  H04N5/35563 ,  H04N5/3696 ,  H04N5/3765 ,  H04N9/045 ,  H04N9/646 ,  H04N21/2543 ,  H04N21/25866 ,  H04N21/25891 ,  H04N21/2743 ,  H04N21/278 ,  H04N21/4223 ,  H04N21/4532 ,  H04N21/458 ,  H04N21/47205 ,  H04N21/4756 ,  H04N21/4758 ,  H04N21/4828 ,  H04N21/812 ,  H04N21/854

Abstract: A photoelectric conversion device includes a semiconductor substrate, an insulating layer provided on the semiconductor substrate, an electrode provided on the insulating layer, a photoelectric conversion film provided on the electrode for converting received light to charges, a line connected between the electrode and the semiconductor substrate, a first planar electrode provided in the insulating layer and connected to the electrode, and a second planar electrode provided in the insulating layer between the first planar electrode and the semiconductor substrate.

公开(公告)号：US20160233268A1

公开(公告)日：2016-08-11

申请号：US15131780

申请日：2016-04-18

Applicant: SEIKO EPSON CORPORATION

Inventor： Hiroaki JIROKU

IPC: H01L27/146

CPC classification number: H01L27/14696 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/022408 ,  H01L31/0322 ,  H01L31/18 ,  H04N3/155 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method of manufacturing a photoelectric conversion apparatus includes forming a switching element on one surface of a substrate, forming an interlayer insulation film so as to cover the switching element, forming a shading film on the interlayer insulation film in an area overlapping the switching element when seen from a film thickness direction of the substrate, forming a lower electrode on the interlayer insulation film, and forming a semiconductor film having a chalcopyrite structure on the lower electrode. A group 16 element is included in the semiconductor film, and in forming the semiconductor film, the shading film and the lower electrode are caused to react to the group 16 element to form a shading film including the group 16 element and a lower electrode including the group 16 element.

Abstract translation: 一种制造光电转换装置的方法，包括在基板的一个表面上形成开关元件，形成层间绝缘膜以覆盖开关元件，在与开关元件重叠的区域中的层间绝缘膜上形成遮光膜， 从基板的膜厚方向观察，在层间绝缘膜上形成下电极，在下电极上形成具有黄铜矿结构的半导体膜。 在半导体膜中包含16族元素，在形成半导体膜时，使遮光膜和下电极与第16族元素反应，形成包含第16族元素和下电极的遮光膜， 第16组元素。