公开(公告)号：US20240234477A9

公开(公告)日：2024-07-11

申请号：US18381038

申请日：2023-10-17

申请人： THALES ,  COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Stéphane DEMIGUEL ,  Jean-Luc REVERCHON ,  Marco BENFANTE

IPC分类号： H01L27/146

CPC分类号： H01L27/14694 ,  H01L27/14649

摘要： A method for fabricating an optoelectronic component includes at least one photodiode, the steps of the method making it possible to move the electric carrier collection field to the layer least sensitive to radiation, thus reducing the influence of irradiation on the dark current.

公开(公告)号：US11933895B2

公开(公告)日：2024-03-19

申请号：US18101824

申请日：2023-01-26

申请人： Luminar Technologies, Inc.

发明人： Jason M. Eichenholz ,  Scott R. Campbell ,  John E. McWhirter ,  Matthew D. Weed ,  Lane A. Martin

IPC分类号： G02B26/08 ,  G01S7/481 ,  G01S17/08 ,  G01S17/42 ,  G01S17/931 ,  G02B5/09 ,  G02B7/182 ,  G02B26/10 ,  G02B26/12 ,  G02B27/09 ,  G02B27/10 ,  G02B27/30 ,  H01L25/16 ,  H01L27/146 ,  G01S17/87 ,  G02B5/08 ,  G02B5/18 ,  G02B5/22

CPC分类号： G01S17/08 ,  G01S7/4813 ,  G01S7/4817 ,  G01S17/42 ,  G01S17/931 ,  G02B5/09 ,  G02B7/1821 ,  G02B26/101 ,  G02B26/105 ,  G02B26/123 ,  G02B26/125 ,  G02B27/0955 ,  G02B27/0977 ,  G02B27/1086 ,  G02B27/30 ,  H01L25/167 ,  H01L27/14643 ,  H01L27/14647 ,  G01S17/87 ,  G02B5/0841 ,  G02B5/1857 ,  G02B5/22 ,  H01L27/14694

摘要： A lidar system includes one or more light sources configured to generate a first beam of light and a second beam of light, a scanner configured to scan the first and second beams of light across a field of regard of the lidar system, and a receiver configured to detect the first beam of light and the second beam of light scattered by one or more remote targets. The scanner includes a rotatable polygon mirror that includes multiple reflective surfaces angularly offset from one another along a periphery of the polygon mirror, the reflective surfaces configured to reflect the first and second beams of light to produce a series of scan lines as the polygon mirror rotates. The scanner also includes a pivotable scan mirror configured to (i) reflect the first and second beams of light and (ii) pivot to distribute the scan lines across the field of regard.

公开(公告)号：US20180351029A1

公开(公告)日：2018-12-06

申请号：US15968266

申请日：2018-05-01

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Daisuke KIMURA ,  Sundararajan BALASEKARAN

IPC分类号： H01L31/18 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/109

CPC分类号： H01L31/1828 ,  H01L27/146 ,  H01L27/14669 ,  H01L27/14694 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/035236 ,  H01L31/03529 ,  H01L31/109 ,  H01L31/184

摘要： A method includes: forming a first mask having a first opening and a second opening; performing etching by using the first mask, to allow the etching to progress at a higher rate in the second opening than in the first opening; forming a second mask having a third opening and a fourth opening; performing etching by using the second mask, to form a mesa in a region interposed by the third opening, and an n-type contact region in the fourth opening; and forming a first electrode on the mesa and a second electrode on the n-type contact region, the first electrode being electrically connected to the third layer, the second electrode being electrically connected to the first layer, wherein a region covered with the first mask and exposed through the fourth opening of the second mask turns into the n-type contact region after the etching using the second mask.

公开(公告)号：US20180190693A1

公开(公告)日：2018-07-05

申请号：US15906316

申请日：2018-02-27

申请人： International Business Machines Corporation

发明人： Mattias B. Borg ,  Lukas Czornomaz ,  Veeresh V. Deshpande ,  Vladimir Djara ,  Heike E. Riel ,  Heinz Schmid

IPC分类号： H01L27/146 ,  H01S5/40 ,  H01S5/30 ,  H01S5/026 ,  H01S5/02 ,  H01L31/0304 ,  H01L27/148 ,  H01L31/12

CPC分类号： H01L27/1469 ,  H01L27/14636 ,  H01L27/1465 ,  H01L27/14694 ,  H01L27/14881 ,  H01L31/03046 ,  H01L31/12 ,  H01S5/021 ,  H01S5/0262 ,  H01S5/3013 ,  H01S5/4025

摘要： A method of fabrication of an array of optoelectronic structures includes first providing a crystalline substrate having cells corresponding to individual optoelectronic structures to be obtained. Each of the cells includes an opening to the substrate. Then, several first layer portions of a first compound semiconductor material are grown in each the opening to at least partly fill a respective one of the cells and form an essentially planar film portion therein. Next, several second layer portions of a second compound semiconductor material are grown over the first layer portions that coalesce to form a coalescent film extending over the first layer portions. Finally, excess portions of materials are removed, to obtain the array of optoelectronic structures. Each optoelectronic structure comprises a stack protruding from the substrate of: a residual portion of one of the second layer portions; and a residual portion of one of the first layer portions.

公开(公告)号：US20180172508A1

公开(公告)日：2018-06-21

申请号：US15843144

申请日：2017-12-15

申请人： Sharp Kabushiki Kaisha ,  The University of Tokyo

发明人： Teruhisa KOTANI ,  Hirofumi YOSHIKAWA ,  Tazuko KITAZAWA ,  Yasuhiko ARAKAWA ,  Jinkwan KWOEN

IPC分类号： G01J1/44 ,  G01N21/3504 ,  H01L31/0352 ,  H01L31/0304

CPC分类号： G01J1/44 ,  G01J1/0228 ,  G01J1/4228 ,  G01J5/026 ,  G01J5/20 ,  G01J2001/444 ,  G01J2005/0048 ,  G01N21/3504 ,  H01L27/14669 ,  H01L27/14694 ,  H01L31/02019 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/101 ,  Y02E10/544

摘要： A detector includes an active layer containing a quantum well or quantum dots and the detector can shift a detection wavelength by applying a voltage to the active layer. The detector has a reference wavelength to be referred to as a criterion for calibration or correction of the detection wavelength within a range in which the detection wavelength is shifted. A method of calibrating or correcting with the detector, a detection wavelength with the reference wavelength being defined as the criterion is provided.

公开(公告)号：US09954137B2

公开(公告)日：2018-04-24

申请号：US15594951

申请日：2017-05-15

申请人： GLOBALFOUNDRIES INC.

发明人： John J. Ellis-Monaghan ,  John C. S. Hall ,  Marwan H. Khater ,  Edward W. Kiewra ,  Steven M. Shank

IPC分类号： H01L21/00 ,  H01L31/20 ,  H01L27/146 ,  H01L31/028 ,  H01L31/0203 ,  H01L21/02

CPC分类号： H01L31/202 ,  H01L21/02667 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/14698 ,  H01L31/0203 ,  H01L31/028 ,  H01L31/208

摘要： Photodetector structures and methods of manufacture are provided. The method includes forming undercuts about detector material formed on a substrate. The method further includes encapsulating the detector to form airgaps from the undercuts. The method further includes annealing the detector material causing expansion of the detector material into the airgaps.

公开(公告)号：US09899549B2

公开(公告)日：2018-02-20

申请号：US15585738

申请日：2017-05-03

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Kenichi Machinaga ,  Yasuhiro Iguchi ,  Takahiko Kawahara

IPC分类号： H01L31/00 ,  H01L31/0352 ,  H01L27/146 ,  H01L31/0304

CPC分类号： H01L31/035236 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/03046

摘要： An infrared-ray sensing device includes a support and a plurality of photodiodes disposed on the support. Each photodiode of the plurality includes a first mesa including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type that is disposed between the first and second semiconductor layers, and a super-lattice region disposed on the support along a reference plane. The third semiconductor layer and the super-lattice region are provided in common for the photodiodes of the plurality. In the photodiodes, the first mesas and the second semiconductor layers are aligned along a first axis intersecting the reference plane so that each of the second semiconductor layers is provided in a position corresponding to the position of its first mesa. Each second semiconductor layer is disposed between the third semiconductor layer and the super-lattice region.

公开(公告)号：US09685481B2

公开(公告)日：2017-06-20

申请号：US15196307

申请日：2016-06-29

申请人： International Business Machines Corporation

发明人： Ning Li ,  Devendra K. Sadana ,  Robert L. Wisnieff

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/105 ,  H01L31/0304 ,  H01L31/028

CPC分类号： H01L27/14652 ,  H01L27/1443 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/1465 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14694 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/105 ,  H01L31/1808 ,  H01L31/1844

摘要： A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.

公开(公告)号：US09627422B2

公开(公告)日：2017-04-18

申请号：US14714079

申请日：2015-05-15

申请人： BAH Holdings LLC

发明人： Sergey Suchalkin ,  Michael Tkachuk

IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L27/146

CPC分类号： H01L27/1443 ,  H01L27/14649 ,  H01L27/14665 ,  H01L27/14669 ,  H01L27/14694 ,  H01L31/109

摘要： There is provided a photodetector, comprising a semiconductor heterostructure having in sequence: a first collection layer having substantially uniform doping of a first doping type; a radiation-absorbing layer having substantially uniform doping of the first doping type and having a band gap less than or equal to that of the first collection layer; and a barrier layer having a band gap greater than that of the radiation-absorbing layer, the top of the valence band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is n-type or the bottom of the conduction band of the barrier layer being substantially equal in energy to that of the radiation-absorbing layer where the first doping type is p-type; wherein a first portion of the barrier layer is of the first doping type and a second portion of the barrier layer is of a second doping type, the first portion of the barrier layer being adjacent to the radiation-absorbing layer, forming a heterojunction within the barrier layer which gives rise to a depletion region within each portion of the barrier layer.

公开(公告)号：US20160300879A1

公开(公告)日：2016-10-13

申请号：US15036104

申请日：2014-10-16

申请人： SONY CORPORATION

发明人： KOUICHI HARADA ,  KYOKO IZUHA ,  KOJI KADONO

IPC分类号： H01L27/146

CPC分类号： H01L27/14647 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/14696 ,  H01L27/14698 ,  H01L31/10

摘要： Provided is an imaging element including: a light receiving element 20; and a stacked structure body 130 that is placed on a light incident side of the light receiving element 20 and in which a semiconductor layer 131 and a nanocarbon film 132 to which a prescribed electric potential is applied are stacked from the light receiving element side. The semiconductor layer 131 is made of a wide gap semiconductor with an electron affinity of 3.5 eV or more, or is made of a semiconductor with a band gap of 2.0 eV or more and an electron affinity of 3.5 eV or more.

摘要翻译： 提供了一种成像元件，包括：光接收元件20; 并且从光接收元件侧堆叠放置在光接收元件20的光入射侧并且施加有规定电位的半导体层131和纳米碳膜132的层叠结构体130。 半导体层131由电子亲和力为3.5eV以上的宽间隙半导体构成，或者由带隙为2.0eV以上且电子亲和度为3.5eV以上的半导体构成。