公开(公告)号：US11073687B2

公开(公告)日：2021-07-27

申请号：US16671704

申请日：2019-11-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guy M. Cohen ,  Lior Horesh ,  Raya Horesh ,  Theodore G. van Kessel ,  Robert L. Wisnieff

IPC: G02B27/00 ,  B08B7/02 ,  G01M11/02 ,  B08B13/00 ,  B60S1/56 ,  G01H1/04 ,  B06B1/06

Abstract: Methods and systems for cleaning an optic include cleaning an optic with ultrasonic vibrations. The locations of nodes in a standing wave of the ultrasonic vibrations are changed by changing a frequency of vibration during cleaning.

公开(公告)号：US10527843B2

公开(公告)日：2020-01-07

申请号：US15593605

申请日：2017-05-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guy M. Cohen ,  Lior Horesh ,  Raya Horesh ,  Theodore G. van Kessel ,  Robert L. Wisnieff

IPC: G02B27/00 ,  B08B7/02 ,  G01M11/02 ,  B08B13/00 ,  B60S1/56 ,  B06B1/06 ,  G01H1/04

Abstract: Methods and systems for cleaning an optic include measuring a state of the optic. It is determined whether the optic needs to be cleaned based on the measured state of the optic. The optic is cleaned with ultrasonic vibrations if the optic needs to be cleaned.

公开(公告)号：US10520723B2

公开(公告)日：2019-12-31

申请号：US15806698

申请日：2017-11-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guy M. Cohen ,  Lior Horesh ,  Raya Horesh ,  Theodore G. van Kessel ,  Robert L. Wisnieff

IPC: G02B27/00 ,  B08B7/02 ,  G01M11/02 ,  B08B13/00 ,  B60S1/56 ,  B06B1/06 ,  G01H1/04

Abstract: Methods and systems for cleaning an optic include measuring a state of the optic. It is determined whether the optic needs to be cleaned based on the measured state of the optic. The optic is cleaned with ultrasonic vibrations if the optic needs to be cleaned.

公开(公告)号：US20190311082A1

公开(公告)日：2019-10-10

申请号：US16433675

申请日：2019-06-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qianwen Chen ,  Li-Wen Hung ,  Wanki Kim ,  John U. Knickerbocker ,  Kenneth P. Rodbell ,  Robert L. Wisnieff

IPC: G06F17/50 ,  H01L25/07 ,  G06F15/78 ,  H01L25/11 ,  H01L25/065 ,  H01L21/56 ,  H01L25/18 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L21/683

Abstract: A method of forming an electrical device is provided that includes forming microprocessor devices on a microprocessor die; forming memory devices on an memory device die; forming component devices on a component die; and forming a plurality of packing devices on a packaging die. Transferring a plurality of each of said microprocessor devices, memory devices, component devices and packaging components to a supporting substrate, wherein the packaging components electrically interconnect the memory devices, component devices and microprocessor devices in individualized groups. Sectioning the supporting substrate to provide said individualized groups of memory devices, component devices and microprocessor devices that are interconnected by a packaging component.

公开(公告)号：US10043845B2

公开(公告)日：2018-08-07

申请号：US15416301

申请日：2017-01-26

Applicant: International Business Machines Corporation

Inventor： Ning Li ,  Devendra K. Sadana ,  Robert L. Wisnieff

IPC: H01L21/00 ,  H01L27/146 ,  H01L31/105 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0352

Abstract: A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.

公开(公告)号：US20180113969A1

公开(公告)日：2018-04-26

申请号：US15626582

申请日：2017-06-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qianwen Chen ,  Li-Wen Hung ,  Wanki Kim ,  John U. Knickerbocker ,  Kenneth P. Rodbell ,  Robert L. Wisnieff

IPC: G06F17/50 ,  G06F15/78

CPC classification number: G06F17/5027 ,  G06F15/7803 ,  G06F15/7807 ,  G06F15/7857 ,  G06F15/803 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/17 ,  H01L25/065 ,  H01L25/0655 ,  H01L25/071 ,  H01L25/112 ,  H01L25/115 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/08225 ,  H01L2224/11002 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/80006 ,  H01L2224/81005 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1432 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19105

Abstract: A method of forming an electrical device is provided that includes forming microprocessor devices on a microprocessor die; forming memory devices on an memory device die; forming component devices on a component die; and forming a plurality of packing devices on a packaging die. Transferring a plurality of each of said microprocessor devices, memory devices, component devices and packaging components to a supporting substrate, wherein the packaging components electrically interconnect the memory devices, component devices and microprocessor devices in individualized groups. Sectioning the supporting substrate to provide said individualized groups of memory devices, component devices and microprocessor devices that are interconnected by a packaging component.

公开(公告)号：US09917122B2

公开(公告)日：2018-03-13

申请号：US15196378

申请日：2016-06-29

Applicant: International Business Machines Corporation

Inventor： Ning Li ,  Devendra K. Sadana ,  Robert L. Wisnieff

IPC: H01L31/00 ,  H01L27/146 ,  H01L31/0304 ,  H01L31/105 ,  H01L31/028

CPC classification number: H01L27/14652 ,  H01L27/1443 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/1465 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14694 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/105 ,  H01L31/1808 ,  H01L31/1844

Abstract: A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.

公开(公告)号：US09911784B2

公开(公告)日：2018-03-06

申请号：US15415281

申请日：2017-01-25

Applicant: International Business Machines Corporation

Inventor： Ning Li ,  Devendra K. Sadana ,  Robert L. Wisnieff

IPC: H01L21/00 ,  H01L27/146 ,  H01L27/144 ,  H01L31/105 ,  H01L31/0304 ,  H01L31/028 ,  H01L31/0352

CPC classification number: H01L27/14652 ,  H01L27/1443 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/1465 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14694 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/105 ,  H01L31/1808 ,  H01L31/1844

Abstract: A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.

公开(公告)号：US20170124446A1

公开(公告)日：2017-05-04

申请号：US14927013

申请日：2015-10-29

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Montague Denneau ,  John U. Knickerbocker ,  Robert L. Wisnieff

IPC: G06K19/077

CPC classification number: G08B13/244 ,  G06K19/0704 ,  G06K19/0707 ,  G06K19/0716 ,  G06K19/0717 ,  G06K19/0723 ,  G06K19/07749 ,  G06K19/0775 ,  G06K19/07775 ,  H01L21/78 ,  H01L23/544 ,  H01L23/66 ,  H01L31/0547 ,  H01L2223/54426 ,  H01L2223/6677

Abstract: A smart tag comprises a processor, a non-volatile memory, at least one of an internal power source and an external power source, and a transceiver configured for two-way communication with a reader external to the smart tag. The smart tag is formed as an integrated circuit chip less than 10 cubic millimeters in size to less than 0.000125 cubic millimeters in size. An apparatus comprising the smart tag may further include an antenna connect to the smart tag.

公开(公告)号：US09472588B1

公开(公告)日：2016-10-18

申请号：US14744210

申请日：2015-06-19

Applicant: International Business Machines Corporation

Inventor： Ning Li ,  Devendra K. Sadana ,  Robert L. Wisnieff

IPC: H01L31/00 ,  H01L27/146 ,  H01L31/105 ,  H01L31/0304 ,  H01L31/028

CPC classification number: H01L27/14652 ,  H01L27/1443 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/1465 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14694 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/105 ,  H01L31/1808 ,  H01L31/1844

Abstract: A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting pixel disposed on a second portion of the top surface of the substrate. The pixel has a plurality of radiation detectors connected with the readout circuitry. The plurality of radiation detectors are composed of at least one visible wavelength radiation detector containing germanium and at least one infrared wavelength radiation detector containing a Group III-V semiconductor material. A method includes providing a silicon substrate; forming silicon readout circuitry on a first portion of a top surface of the substrate and forming a radiation detecting pixel, on a second portion of the top surface of the substrate, that has a plurality of radiation detectors formed to contain a visible wavelength detector composed of germanium and an infrared wavelength detector composed of a Group III-V semiconductor material.

Abstract translation: 一种结构包括硅衬底; 硅读出电路设置在衬底的顶表面的第一部分上，辐射检测像素设置在衬底顶表面的第二部分上。 像素具有与读出电路相连的多个辐射检测器。 多个辐射检测器由至少一个含有锗的可见波长辐射检测器和至少一个含有III-V族半导体材料的红外波长辐射检测器组成。 一种方法包括提供硅衬底; 在所述衬底的顶表面的第一部分上形成硅读出电路，并在所述衬底的顶表面的第二部分上形成辐射检测像素，所述第二部分具有多个辐射检测器，所述辐射检测器形成为容纳可见波长检测器，所述可见波长检测器由 锗和由III-V族半导体材料组成的红外波长检测器。