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30 条记录 (耗时 0.016 秒)

    Thermoelectric device
    2.
    发明授权
    Thermoelectric device 有权

    公开(公告)号：US09947853B2

    公开(公告)日：2018-04-17

    申请号：US14496729

    申请日：2014-09-25

    申请人： International Business Machines Corporation

    发明人： Heike E. Riel ,  Volker Schmidt

    IPC分类号： H01L35/32

    CPC分类号： H01L35/32

    摘要： A thermoelectric device for transferring heat from a heat source to a heat sink includes at least one thermoelectric leg pair having a first leg including an n-type semiconductor material and a second leg including a p-type semiconductor material. The first leg and the second leg are electrically coupled in series. A resistive element electrically couples the first leg and the second leg between the heat source and the heat sink.

    Cognitive volume and speech frequency levels adjustment
    5.
    发明授权
    Cognitive volume and speech frequency levels adjustment 有权

    公开(公告)号：US10743104B1

    公开(公告)日：2020-08-11

    申请号：US16777178

    申请日：2020-01-30

    申请人： International Business Machines Corporation

    发明人： Komminist Weldemariam ,  Abdigani Diriye ,  Michael S. Gordon ,  Heike E. Riel

    IPC分类号： H04R3/04 ,  G10L15/183 ,  G10L15/06

    摘要： A volume and speech frequency level adjustment method, system, and computer program product include learning a characteristic of at least one of audio volume and speech frequency from a conversation, detecting a contextual characteristic of an ongoing conversation and an interaction of a user with a device, determining a cognitive state of the user in relation to the ongoing conversation as a function of at least one of the contextual characteristic of the volume or the speech frequency, and a user interaction pattern with a conversation device, and dynamically adjusting audio levels of the ongoing conversation for the user based on the function.

    Fabrication of semiconductor junctions
    6.
    发明授权
    Fabrication of semiconductor junctions 有权

    公开(公告)号：US10411092B2

    公开(公告)日：2019-09-10

    申请号：US15445145

    申请日：2017-02-28

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Mattias B. Borg ,  Kirsten E. Moselund ,  Heike E. Riel ,  Heinz Schmid

    IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/306 ,  H01L31/0352 ,  H01L33/24

    摘要： A method comprises providing a cavity structure on the substrate comprising a first growth channel extending in a first direction, a second growth channel extending in a second direction, wherein the second direction is different from the first direction and the second channel is connected to the first channel at a channel junction, a first seed surface in the first channel, at least one opening for supplying precursor materials to the cavity structure, selectively growing from the first seed surface a first semiconductor structure substantially only in the first direction and in the first channel, thereby forming a second seed surface for a second semiconductor structure at the channel junction, growing in the second channel the second semiconductor structure in the second direction from the second seed surface, thereby forming the semiconductor junction comprising the first and the second semiconductor structure.

    Thermoelectric elements
    8.
    发明授权
    Thermoelectric elements 有权
    热电元件

    公开(公告)号：US09543492B2

    公开(公告)日：2017-01-10

    申请号：US13966659

    申请日：2013-08-14

    申请人： International Business Machines Corporation

    发明人： Bernd W. Gotsmann ,  Siegfried F. Karg ,  Heike E. Riel

    IPC分类号： H01L35/32 ,  H01L35/28

    CPC分类号： H01L35/28

    摘要： A thermoelectric element includes a body formed of a single thermoelectric material and extending in a first direction along which a thermal gradient is established in thermoelectric operation, wherein the body has at least first and second adjacent sections in the first direction; at least one of the sections is subject to stress which is applied to that section substantially all around a central axis of the body in the first direction; and the arrangement is such that the stress results in different strain in the first and second sections producing an energy barrier in the body to enhance thermoelectric operation.

    摘要翻译： 热电元件包括​​由单个热电材料形成并在沿热电运行中建立热梯度的第一方向延伸的主体，其中主体在第一方向上具有至少第一和第二相邻部分; 所述部分中的至少一个受到应力，所述应力基本上全部围绕所述主体的沿所述第一方向的中心轴施加到所述部分; 并且这种布置使得应力导致第一和第二部分中的不同应变在体内产生能量障碍以增强热电运行。

    THERMOELECTRIC DEVICE
    9.
    发明申请
    THERMOELECTRIC DEVICE 审中-公开
    热电装置

    公开(公告)号：US20170005251A1

    公开(公告)日：2017-01-05

    申请号：US15104565

    申请日：2014-12-08

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Heike E. Riel ,  Volker Schmidt

    IPC分类号： H01L35/32 ,  H01L35/34 ,  H01L35/10

    CPC分类号： H01L35/32 ,  H01L35/10 ,  H01L35/34

    摘要： A thermoelectric device for transferring heat from a heat source to a heat sink. The device includes a first thermoelectric leg pair having a first leg including an n-type semiconductor material and a second leg including a p-type semiconductor material, wherein the first leg and the second leg are electrically coupled in series; a second thermoelectric leg pair has a third leg including an n-type semiconductor material and a fourth leg including a p-type semiconductor material, wherein the third leg and the fourth leg are electrically coupled in series; a first contact placed between the first leg and the fourth leg and a second contact placed between the second leg and the third leg. A method for manufacturing a thermoelectric device is also provided.

    摘要翻译： 一种用于将热量从热源传递到散热器的热电装置。 该装置包括第一热电腿对，其具有包括n型半导体材料的第一支脚和包括p型半导体材料的第二支脚，其中第一支脚和第二支脚串联电耦合; 第二热电腿对具有包括n型半导体材料的第三腿和包括p型半导体材料的第四腿，其中第三腿和第四腿串联电耦合; 放置在第一腿部和第四腿部之间的第一接触件和放置在第二腿部和第三腿部之间的第二接触件。 还提供了一种用于制造热电装置的方法。