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公开(公告)号：US20170194527A1
公开(公告)日：2017-07-06
申请号：US15356152
申请日：2016-11-18
申请人： NARSINGH B. SINGH , JOHN V. VELIADIS , BETTINA NECHAY , ANDRE BERGHMANS , DAVID J. KNUTESON , DAVID KAHLER , BRIAN WAGNER , MARC SHERWIN
发明人： NARSINGH B. SINGH , JOHN V. VELIADIS , BETTINA NECHAY , ANDRE BERGHMANS , DAVID J. KNUTESON , DAVID KAHLER , BRIAN WAGNER , MARC SHERWIN
IPC分类号： H01L31/107 , H01L31/18 , H01L31/0336 , H01L27/144 , H01L31/0232
CPC分类号： H01L31/1075 , H01L27/1443 , H01L27/1446 , H01L31/02327 , H01L31/0336 , H01L31/035227 , H01L31/18
摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.
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公开(公告)号：US07830644B2
公开(公告)日：2010-11-09
申请号：US11713783
申请日：2007-03-05
申请人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
发明人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
CPC分类号： C01G23/002 , C01P2002/34 , C01P2002/72 , C01P2006/40 , C04B35/462 , C04B2235/3208 , C04B2235/3227 , C04B2235/3281 , H01G4/105 , H01G4/1209 , H01G4/1218 , H01G4/306
摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.
摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaCu 3 Ti 4 O 12或La 3 Ga 5 SiO 4的电介质。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善的结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器
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公开(公告)号：US20100192840A1
公开(公告)日：2010-08-05
申请号：US12713753
申请日：2010-02-26
申请人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
发明人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
IPC分类号： C30B23/02
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/7781 , H01L29/7786
摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
摘要翻译： 可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。 掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。 使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。
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公开(公告)号：US20080206121A1
公开(公告)日：2008-08-28
申请号：US12081636
申请日：2008-04-18
申请人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
发明人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
CPC分类号： C30B23/02 , C30B23/025 , C30B25/183 , C30B29/36 , C30B29/406
摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
摘要翻译： 公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。 可以通过使用AlN和SiC粉末作为原料的气相沉积法在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。 （AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷 匹配和化学。
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公开(公告)号：US10211359B2
公开(公告)日：2019-02-19
申请号：US15356152
申请日：2016-11-18
申请人： Narsingh B. Singh , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
发明人： Narsingh B. Singh , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
IPC分类号： H01L31/107 , H01L31/0336 , H01L31/0232 , H01L27/144 , H01L31/18 , H01L31/0352
摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.
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公开(公告)号：US20150236186A1
公开(公告)日：2015-08-20
申请号：US14185567
申请日：2014-02-20
申请人： NARSINGH B. SINGH , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
发明人： NARSINGH B. SINGH , John V. Veliadis , Bettina Nechay , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , Marc Sherwin
IPC分类号： H01L31/107 , H01L31/18 , H01L27/144 , H01L31/0336 , H01L31/0232
CPC分类号： H01L31/1075 , H01L27/1443 , H01L27/1446 , H01L31/02327 , H01L31/0336 , H01L31/035227 , H01L31/18
摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.
摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。
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公开(公告)号：US07683400B1
公开(公告)日：2010-03-23
申请号：US11474398
申请日：2006-06-26
申请人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
发明人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
IPC分类号： H01L29/08
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/7781 , H01L29/7786
摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
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公开(公告)号：US20080218940A1
公开(公告)日：2008-09-11
申请号：US11713783
申请日：2007-03-05
申请人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
发明人： Narsingh B. Singh , John J. Talvacchio , Marc Sherwin , Andre Berghmans , David J. Knuteson , David Kahler , Brian Wagner , John D. Adam
CPC分类号： C01G23/002 , C01P2002/34 , C01P2002/72 , C01P2006/40 , C04B35/462 , C04B2235/3208 , C04B2235/3227 , C04B2235/3281 , H01G4/105 , H01G4/1209 , H01G4/1218 , H01G4/306
摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.
摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaC 3 3 Ti 4 O 12或La 3 N 3的电介质 > 5 SiO 4。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器
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公开(公告)号：US07371282B2
公开(公告)日：2008-05-13
申请号：US11484691
申请日：2006-07-12
申请人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
发明人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
CPC分类号： C30B23/02 , C30B23/025 , C30B25/183 , C30B29/36 , C30B29/406
摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
摘要翻译： 公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。 可以通过使用AlN和SiC粉末作为起始材料的气相沉积工艺在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。 （AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷 匹配和化学。
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公开(公告)号：US20080011223A1
公开(公告)日：2008-01-17
申请号：US11484691
申请日：2006-07-12
申请人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
发明人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
CPC分类号： C30B23/02 , C30B23/025 , C30B25/183 , C30B29/36 , C30B29/406
摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
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