公开(公告)号：US20170194527A1

公开(公告)日：2017-07-06

申请号：US15356152

申请日：2016-11-18

申请人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

发明人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L31/0336 ,  H01L27/144 ,  H01L31/0232

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

公开(公告)号：US09570646B2

公开(公告)日：2017-02-14

申请号：US14185567

申请日：2014-02-20

申请人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

发明人： Narsingh B. Singh ,  John V. Veliadis ,  Bettina Nechay ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  Marc Sherwin

IPC分类号： H01L31/107 ,  H01L31/0336 ,  H01L31/0232 ,  H01L27/144 ,  H01L31/18

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

摘要翻译： 集成电路包括包括外延层的衬底材料，其中衬底材料和外延层形成具有第一导电类型的外延层的第一半导体材料。 包括不同于第一半导体材料的第一导电类型掺杂的具有第二导电类型的第二半导体材料的至少一个纳米线与第一半导体材料形成结交​​叉区域。 纳米线和第一半导体材料在结交叉区域形成雪崩光电二极管（APD），以实现单光子检测。 在替代配置中，APD形成为p-i-n交叉区域，其中n表示n型材料，i表示本征层，p表示p型材料。

公开(公告)号：US07888248B2

公开(公告)日：2011-02-15

申请号：US11826278

申请日：2007-07-13

申请人： Narsingh Bahadur Singh ,  Brian P. Wagner ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Michael Aumer ,  Jerry W. Hedrick ,  Marc E. Sherwin ,  Michael M. Fitelson ,  Mark S. Usefara ,  Sean McLaughlin ,  Travis Randall ,  Thomas J. Knight

发明人： Narsingh Bahadur Singh ,  Brian P. Wagner ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Michael Aumer ,  Jerry W. Hedrick ,  Marc E. Sherwin ,  Michael M. Fitelson ,  Mark S. Usefara ,  Sean McLaughlin ,  Travis Randall ,  Thomas J. Knight

IPC分类号： H01L21/20

CPC分类号： C30B25/105 ,  C30B23/02 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  Y10T428/259

摘要： A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

摘要翻译： 公开了一种在Si衬底上生长含SiC膜的方法。 可以通过例如等离子体溅射，化学气相沉积或原子层沉积在Si衬底上形成含SiC的膜。 这样生长的含SiC膜提供了用于生长半导体晶体的昂贵的SiC晶圆的替代方案。

公开(公告)号：US20090302426A1

公开(公告)日：2009-12-10

申请号：US12136193

申请日：2008-06-10

申请人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

发明人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

IPC分类号： H01L21/329 ,  H01L29/868

CPC分类号： F01P3/2285 ,  F01P2025/04 ,  Y10S977/774

摘要： A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.

摘要翻译： 提供了一种用于制造具有以离散区域或图案选择性地沉积在硅衬底上的锗纳米膜层的半导体器件的工艺。 还提供了一种半导体器件，其具有锗膜层，其设置在期望的区域中或具有可在不进行蚀刻和图案化锗膜层的情况下制备的所需图案。 还提供了制备具有一种导电类型的硅衬底和不同导电类型的锗纳米膜层的半导体器件的工艺。 提供具有选择性生长的锗纳米薄膜层的半导体器件，例如包括发光二极管，光电探测器等的二极管。 该方法也可用于制造诸如CMOS器件，MOSFET器件等的先进的半导体器件。

公开(公告)号：US20080179534A1

公开(公告)日：2008-07-31

申请号：US11699335

申请日：2007-01-30

申请人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

发明人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

IPC分类号： G01J1/42

CPC分类号： G01J1/429 ,  G01J1/0488

摘要： A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.

摘要翻译： 公开了使用窄带UV晶体滤波器的核辐射检测系统。 由于可以在大约200-350nm（紫外范围）的光谱范围内检测在β辐射和γ射线衰变期间产生的光子，所以使用基于UV滤光片的光电传感器进行检测。 核辐射检测系统包括能够聚焦在辐射源上的光学组件，具有窄带UV晶体滤波器并被定位成接收透过光学组件的光的UV滤光器组件，以及定位成接收透过光学组件的光的光检测器 紫外线过滤器总成。 窄带UV晶体滤波器由选自氟硅酸镍，氟硼酸镍和硫酸镍镍的晶体制成。 可以掺杂氟硅酸镍，氟硼酸镍和硫酸镍钾以实现更窄的带过滤器。 辐射检测系统可用于监测核电厂或核废料堆场的污染。 也可用于在发生核事故时监视污染。

公开(公告)号：US07830644B2

公开(公告)日：2010-11-09

申请号：US11713783

申请日：2007-03-05

申请人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

发明人： Narsingh B. Singh ,  John J. Talvacchio ,  Marc Sherwin ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Brian Wagner ,  John D. Adam

IPC分类号： H01G4/06 ,  H01G4/005

CPC分类号： C01G23/002 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/462 ,  C04B2235/3208 ,  C04B2235/3227 ,  C04B2235/3281 ,  H01G4/105 ,  H01G4/1209 ,  H01G4/1218 ,  H01G4/306

摘要： Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

摘要翻译： 公开了生产多晶和单晶电介质的方法，包括包含CaCu 3 Ti 4 O 12或La 3 Ga 5 SiO 4的电介质。 通过原子晶格常数调整电介质及其生长衬底，制造出具有改善的结晶度的高级单晶。 根据所公开的方法制备的电介质材料可用于制造储能装置，例如， 电容器

公开(公告)号：US20100192840A1

公开(公告)日：2010-08-05

申请号：US12713753

申请日：2010-02-26

申请人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

发明人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

IPC分类号： C30B23/02

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/7781 ,  H01L29/7786

摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

摘要翻译： 可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。 掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。 使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。

公开(公告)号：US20090014756A1

公开(公告)日：2009-01-15

申请号：US11826278

申请日：2007-07-13

申请人： Narsingh Bahadur Singh ,  Brian P. Wagner ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Michael Aumer ,  Jerry W. Hedrick ,  Marc E. Sherwin ,  Michael M. Fitelson ,  Mark S. Usefara ,  Sean McLaughlin ,  Travis Randall ,  Thomas J. Knight

发明人： Narsingh Bahadur Singh ,  Brian P. Wagner ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Michael Aumer ,  Jerry W. Hedrick ,  Marc E. Sherwin ,  Michael M. Fitelson ,  Mark S. Usefara ,  Sean McLaughlin ,  Travis Randall ,  Thomas J. Knight

IPC分类号： H01L29/739 ,  B32B5/16 ,  H01L21/20

CPC分类号： C30B25/105 ,  C30B23/02 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  Y10T428/259

摘要： A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

摘要翻译： 公开了一种在Si衬底上生长含SiC膜的方法。 可以通过例如等离子体溅射，化学气相沉积或原子层沉积在Si衬底上形成含SiC的膜。 这样生长的含SiC膜提供了用于生长半导体晶体的昂贵的SiC晶圆的替代方案。

公开(公告)号：US20080206121A1

公开(公告)日：2008-08-28

申请号：US12081636

申请日：2008-04-18

申请人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

发明人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

IPC分类号： C01B33/00 ,  C23C16/06

CPC分类号： C30B23/02 ,  C30B23/025 ,  C30B25/183 ,  C30B29/36 ,  C30B29/406

摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

摘要翻译： 公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。 可以通过使用AlN和SiC粉末作为原料的气相沉积法在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。 （AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷 匹配和化学。

公开(公告)号：US20190131480A1

公开(公告)日：2019-05-02

申请号：US16233705

申请日：2018-12-27

申请人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

发明人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

IPC分类号： H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/0336

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.