公开(公告)号：US11908887B2

公开(公告)日：2024-02-20

申请号：US17307592

申请日：2021-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Boeun Park ,  Younggeun Park ,  Jooho Lee

IPC: H10B53/00 ,  H01L49/02

CPC classification number: H01L28/56 ,  H01L28/75 ,  H10B53/00

Abstract: Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.

公开(公告)号：US11594592B2

公开(公告)日：2023-02-28

申请号：US17060911

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Younsoo Kim ,  Jaeho Lee

IPC: H01L49/02 ,  H01L27/108

Abstract: A capacitor includes: a bottom electrode; a top electrode over the bottom electrode; a dielectric film between the bottom electrode and the top electrode; and a doped Al2O3 film between the top electrode and the dielectric film, wherein the doped Al2O3 film includes a first dopant, and an oxide including the same element as the first dopant has a higher dielectric constant than a dielectric constant of Al2O3.

公开(公告)号：US11270420B2

公开(公告)日：2022-03-08

申请号：US16651997

申请日：2018-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changgwun Lee ,  Ildo Kim ,  Jaeho Lee ,  Hyeyun Jung ,  Kihuk Lee

IPC: G06T5/50 ,  G06F3/0482 ,  G06K9/62

Abstract: Various embodiments provide an electronic device and a method, the electronic device comprising a communication module, a memory, and a processor, wherein the processor is configured to: recognize at least one object from among one or more objects by using an image containing the one or more objects; identify a recognition rate and a category corresponding to the at least one object at least on the basis of the recognition; obtain at least one reference image corresponding to the object at least on the basis of the category; when the recognition rate satisfies a first specified condition associated with the recognition rate corresponding to the category, correct the at least one object or an area corresponding to the at least one object by using a reference image, which satisfies the first specified condition, from among the at least one reference image; and when the recognition rate satisfies a second specified condition associated with the recognition rate corresponding to the category, correct the at least one object or the area corresponding to the at least one object by using a reference image selected in accordance with an input from among the at least one reference image. In addition, other embodiments are also possible.

公开(公告)号：US11158230B2

公开(公告)日：2021-10-26

申请号：US16282947

申请日：2019-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Minseung Kim ,  Taekyoung Kim ,  Jongkon Bae ,  Youngil Yoon ,  Yohan Lee ,  Jihoon Jeon ,  Hyesoon Jeong ,  Yunpyo Hong ,  Jongwu Baek

IPC: G09G3/20 ,  G09G3/3208 ,  G06F3/0484 ,  G06F3/0488

Abstract: An electronic device includes a touch screen display including an organic light emitting layer that is formed of a plurality of pixels, a wireless communication circuit, a processor operatively coupled with the display and the wireless communication circuit, and a memory operatively coupled with the processor. The memory stores instructions that, upon execution, enable the processor to provide a first mode of displaying a first graphical user interface (GUI) on the display by using a first number of colors in a state where all the pixels are turned on, a second mode of displaying a second GUI on the display by using a second number of colors in a state where some of the pixels are turned off, and a third mode of displaying a third GUI on the display by using the first number of colors in a state where some of the pixels are turned off, and select one of the first mode, the second mode or the third mode on the basis of at least one of a state of the electronic device, a content of the GUI or a use pattern of a user.

公开(公告)号：US11094390B2

公开(公告)日：2021-08-17

申请号：US16795730

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungryun Kim ,  Yoonna Oh ,  Hohyun Shin ,  Jaeho Lee

IPC: G11C29/18 ,  G11C29/00 ,  G11C29/42 ,  G11C29/44 ,  G11C29/12

Abstract: A semiconductor memory device comprises a memory cell array including segments disposed at corresponding intersections of row and column blocks, each row block including dynamic memory cells coupled to word-lines and bit-lines, a row decoder that activates a first word-line of a first row block in response to a row address, determines whether the first row block is a master block based on a first fuse information and a second row block is mapped as a slave to the master block, activates a second word-line of the second row block, and outputs a row block information signal, and a column decoder accessing a portion of first memory cells coupled to the first word-line or a portion of second memory cells coupled to the second word-line based on a column address, the row block information signal and a second fuse information.

公开(公告)号：US11024748B2

公开(公告)日：2021-06-01

申请号：US15892850

申请日：2018-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Haeryong Kim ,  Sanghyun Jo ,  Hyeonjin Shin

IPC: H01L29/788 ,  H01L29/423 ,  H01L29/49 ,  H01L27/11521 ,  G11C11/54 ,  G11C11/56 ,  H01L29/786 ,  H01L29/06 ,  G11C13/02 ,  H01L21/28 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10 ,  B82Y10/00

Abstract: Provided are nonvolatile memory devices including 2-dimensional (2D) material and apparatuses including the nonvolatile memory devices. A nonvolatile memory device may include a storage stack including a plurality of charge storage layers between a channel element and a gate electrode facing the channel element. The plurality of charge storage layers may include a 2D material. An interlayer barrier layer may be further provided between the plurality of charge storage layers. The nonvolatile memory device may have a multi-bit or multi-level memory characteristic due to the plurality of charge storage layers.

公开(公告)号：US10186545B2

公开(公告)日：2019-01-22

申请号：US15244073

申请日：2016-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jinseong Heo ,  Seongjun Park

IPC: H01L27/146 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109

Abstract: An image sensor may include visible light detectors and a near-infrared light detector. The near-infrared light detector may contain a material highly sensitive to near-infrared rays, and thus the size of the near-infrared light detector may be reduced.

公开(公告)号：US09997604B2

公开(公告)日：2018-06-12

申请号：US15113079

申请日：2015-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Changseok Lee ,  Seongjun Park

IPC: H01L29/417 ,  H01L29/78 ,  H01L23/532 ,  H01L21/768 ,  H01L29/16 ,  H01L23/522 ,  H01L23/485

CPC classification number: H01L29/41725 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53276 ,  H01L29/1606 ,  H01L29/417 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are an electrode connecting structure that includes an adhesion layer formed between a graphene layer and a metal layer and an electronic device having the electrode connecting structure. The electrode connecting structure may include an adhesion layer formed of a two-dimensional material provided between the graphene layer and the metal layer. The graphene layer may be a diffusion barrier, and the adhesion layer may stably maintain the interface characteristics of the graphene layer and the metal layer when the metal layer is formed on a surface of the graphene layer.

公开(公告)号：US20170330935A1

公开(公告)日：2017-11-16

申请号：US15605057

申请日：2017-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Kiyoung Lee ,  Jaeho Lee ,  Seongjun Park

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/78 ,  H01L21/225 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/0665 ,  H01L21/2253 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/4236 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687 ,  H01L29/78696

Abstract: Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.

公开(公告)号：US12191348B2

公开(公告)日：2025-01-07

申请号：US18462909

申请日：2023-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Boeun Park ,  Younggeun Park ,  Jooho Lee

IPC: H01L23/66 ,  H01L49/02

Abstract: Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.