Three Dimensional (3D) Memories with Multiple Resistive Change Elements per Cell and Corresponding Architectures for In-Memory Computing

    公开(公告)号:US20240013834A1

    公开(公告)日:2024-01-11

    申请号:US18370541

    申请日:2023-09-20

    Applicant: Nantero, Inc.

    Inventor: Claude L. Bertin

    CPC classification number: G11C13/025 H10K10/50 H10K19/202 H10K85/221

    Abstract: The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

    Three dimensional (3D) memories with multiple resistive change elements per cell and corresponding architectures

    公开(公告)号:US11798623B2

    公开(公告)日:2023-10-24

    申请号:US17519828

    申请日:2021-11-05

    Applicant: Nantero, Inc.

    Inventor: Claude L. Bertin

    CPC classification number: G11C13/025 H10K10/50 H10K19/202 H10K85/221

    Abstract: The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.

    Chemical methods for nucleic acid-based data storage

    公开(公告)号:US11286479B2

    公开(公告)日:2022-03-29

    申请号:US17012909

    申请日:2020-09-04

    Abstract: The present disclosure discloses methods and systems for encoding digital information in nucleic acid (e.g., deoxyribonucleic acid) molecules without base-by-base synthesis, by encoding bit-value information in the presence or absence of unique nucleic acid sequences within a pool, comprising specifying each bit location in a bit-stream with a unique nucleic sequence and specifying the bit value at that location by the presence or absence of the corresponding unique nucleic acid sequence in the pool. Also disclosed are chemical methods for generating unique nucleic acid sequences using combinatorial genomic strategies (e.g., assembly of multiple nucleic acid sequences or enzymatic-based editing of nucleic acid sequences).

    Storage device, system, and method
    10.
    发明授权

    公开(公告)号:US11282588B2

    公开(公告)日:2022-03-22

    申请号:US17254459

    申请日:2020-05-26

    Applicant: ILLUMINA, INC.

    Abstract: A system writes input data to a storage device as machine-written polynucleotides; and reads machine written polynucleotides from the storage device as output data. The storage device includes a flow cell including a plurality of storage wells in which machine written polynucleotides may be stored. The storage device may include a set of electrodes corresponding to the storage wells that allow for selective interactions with wells across the surface of a flow cell. Operation of the storage device may include receiving a read request associated with a particular location in the storage device, creating a copy of a nucleotide sequence located at the particular location in the storage device, transferring the copy of the nucleotide sequence to a read location, and reading the copy of the nucleotide sequence at the read location.

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