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公开(公告)号：US11908887B2
公开(公告)日：2024-02-20
申请号：US17307592
申请日：2021-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho Lee , Boeun Park , Younggeun Park , Jooho Lee
Abstract: Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.
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公开(公告)号：US20230253447A1
公开(公告)日：2023-08-10
申请号：US18147289
申请日：2022-12-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunsun Kim , Boeun Park , Cheolhyun An , Hyungjun Kim , Younggeun Park , Jeongil Bang
IPC: H01L21/02
Abstract: A method of forming a semiconductor device includes forming a first electrode on a single-crystal structure. A dielectric layer is formed on the first electrode. A second electrode is formed on the dielectric layer. The forming a dielectric layer includes forming a first dielectric layer having a single-crystal perovskite structure on the first electrode, and forming a second dielectric layer on the first dielectric layer. An upper surface of the first dielectric layer adjacent to the second dielectric layer has a greater surface roughness than an upper surface of the second dielectric layer adjacent to the second electrode.
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公开(公告)号：US12051717B2
公开(公告)日：2024-07-30
申请号：US17702155
申请日：2022-03-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Boeun Park , Yongsung Kim , Jeonggyu Song , Jooho Lee
Abstract: An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.
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公开(公告)号：US12034036B2
公开(公告)日：2024-07-09
申请号：US17334030
申请日：2021-05-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeonggyu Song , Younsoo Kim , Haeryong Kim , Boeun Park , Eunha Lee , Jooho Lee , Hyangsook Lee , Yong-Hee Cho , Eunae Cho
CPC classification number: H01L28/65 , H01L28/56 , H01L29/0847
Abstract: A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.
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Patent Agency Ranking
5.发明授权公开(公告)号：US12191348B2
公开(公告)日：2025-01-07
申请号：US18462909
申请日：2023-09-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho Lee , Boeun Park , Younggeun Park , Jooho Lee
Abstract: Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.
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公开(公告)号：US11765887B2
公开(公告)日：2023-09-19
申请号：US17116097
申请日：2020-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho Lee , Boeun Park , Yongsung Kim , Jooho Lee
CPC classification number: H10B12/37 , G01G7/00 , G01G7/06 , G11C11/221 , G11C11/223 , G11C11/2275 , G11C19/005 , G11C19/18 , H01L28/56 , H01L29/516 , H10B12/33
Abstract: A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation:
V
MAX
=
(
1
+
❘
"\[LeftBracketingBar]"
Z
2
❘
"\[RightBracketingBar]"
❘
"\[LeftBracketingBar]"
Z
1
❘
"\[RightBracketingBar]"
)
t
F
E
FM
where VMAX is a capacitance boosting operating voltage, Z1 is impedance of the ferroelectric film, Z2 is impedance of the dielectric film, tF is a thickness of the ferroelectric film, and EFM is an electric field applied to the ferroelectric film having a maximum polarization.-
公开(公告)号：US11980023B2
公开(公告)日：2024-05-07
申请号：US18331493
申请日：2023-06-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho Lee , Boeun Park , Yongsung Kim , Jooho Lee
CPC classification number: H10B12/37 , G01G7/00 , G01G7/06 , G11C11/221 , G11C11/223 , G11C11/2275 , G11C19/005 , G11C19/18 , H01L28/56 , H01L29/516 , H10B12/33
Abstract: A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation:
V
MAX
=
(
1
+
❘
"\[LeftBracketingBar]"
Z
2
❘
"\[RightBracketingBar]"
❘
"\[LeftBracketingBar]"
Z
1
❘
"\[RightBracketingBar]"
)
t
F
E
FM
where VMAX is a capacitance boosting operating voltage, Z1 is impedance of the ferroelectric film, Z2 is impedance of the dielectric film, tF is a thickness of the ferroelectric film, and EFM is an electric field applied to the ferroelectric film having a maximum polarization.-
8.发明授权公开(公告)号：US11791372B2
公开(公告)日：2023-10-17
申请号：US17098915
申请日：2020-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho Lee , Boeun Park , Younggeun Park , Jooho Lee
CPC classification number: H01L28/56 , H01L23/66 , H01L28/75 , H01L2223/6661
Abstract: Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.
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9.发明公开公开(公告)号：US20230299125A1
公开(公告)日：2023-09-21
申请号：US18156273
申请日：2023-01-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeonggyu SONG , Eunae Cho , Yongsung Kim , Boeun Park , Narae Han
Abstract: A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).
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