公开(公告)号：US20170279173A1

公开(公告)日：2017-09-28

申请号：US15354539

申请日：2016-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insun Jung ,  Hyukjae Kwon ,  Mokwon Kim ,  Junghwa Kim ,  Sunjung Byun ,  Daeun Yu ,  Dongjin Yun ,  Hyangsook Lee

IPC: H01M12/08 ,  H01M4/88 ,  H01M4/96 ,  H01M4/86

Abstract: A metal-air battery includes an anode portion including a metal; a cathode portion including a porous layer, wherein the porous layer includes a reduced non-stacked graphene oxide; and an electrolyte disposed between the anode portion and the cathode portion.

公开(公告)号：US11848366B2

公开(公告)日：2023-12-19

申请号：US17468098

申请日：2021-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehwan Moon ,  Eunha Lee ,  Junghwa Kim ,  Hyangsook Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L21/02 ,  H01L29/423 ,  H01L21/28 ,  H01L49/02 ,  H01L29/51 ,  H10B12/00

CPC classification number: H01L29/42364 ,  H01L21/02304 ,  H01L21/02356 ,  H01L21/28158 ,  H01L28/40 ,  H01L29/40111 ,  H01L29/516 ,  H01L29/518 ,  H10B12/37

Abstract: Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.

公开(公告)号：US11824118B2

公开(公告)日：2023-11-21

申请号：US18060140

申请日：2022-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Sangwook Kim ,  Yunseong Lee ,  Sanghyun Jo ,  Hyangsook Lee

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/51

CPC classification number: H01L29/78391 ,  H01L29/401 ,  H01L29/516

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

公开(公告)号：US11569341B2

公开(公告)日：2023-01-31

申请号：US17344475

申请日：2021-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyangsook Lee ,  Junghwa Kim ,  Eunha Lee ,  Jeonggyu Song ,  Jooho Lee ,  Myoungho Jeong

IPC: H01L49/02 ,  H01L29/08 ,  H01L21/02

Abstract: Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a , , or direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

公开(公告)号：US11527635B2

公开(公告)日：2022-12-13

申请号：US16890231

申请日：2020-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong Lee ,  Sangwook Kim ,  Sanghyun Jo ,  Jinseong Heo ,  Hyangsook Lee

IPC: H01L29/51 ,  H01L29/78 ,  H01L21/02

Abstract: A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.

公开(公告)号：US09721943B2

公开(公告)日：2017-08-01

申请号：US15052290

申请日：2016-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok Lee ,  Keunwook Shin ,  Hyeonjin Shin ,  Seongjun Park ,  Hyunjae Song ,  Hyangsook Lee ,  Yeonchoo Cho

IPC: H01L23/528 ,  H01L27/06

CPC classification number: H01L27/0629 ,  H01L23/53271 ,  H01L27/101 ,  H01L27/228

Abstract: A wiring structure may include at least two conductive material layers and a two-dimensional layered material layer in an interface between the at least two conductive material layers. The two-dimensional layered material layer may include a grain expander layer which causes grain size of a conductive material layer which is on the two-dimensional layered material layer to be increased. Increased grain size may result in resistance of the second conductive material layer to be reduced. As a result, the total resistance of the wiring structure may be reduced. The two-dimensional layered material layer may contribute to reducing a total thickness of the wiring structure. Thus, a low-resistance and high-performance wiring structure without an increase in a thickness thereof may be implemented.

公开(公告)号：US12230711B2

公开(公告)日：2025-02-18

申请号：US18487275

申请日：2023-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Sangwook Kim ,  Yunseong Lee ,  Sanghyun Jo ,  Hyangsook Lee

IPC: H01L29/51 ,  H01L29/40 ,  H01L29/78

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

公开(公告)号：US12100749B2

公开(公告)日：2024-09-24

申请号：US18059700

申请日：2022-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong Lee ,  Sangwook Kim ,  Sanghyun Jo ,  Jinseong Heo ,  Hyangsook Lee

IPC: H01L29/51 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L29/516 ,  H01L21/0228 ,  H01L29/78391

Abstract: A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.

公开(公告)号：US11676999B2

公开(公告)日：2023-06-13

申请号：US17072737

申请日：2020-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Eunha Lee ,  Jinseong Heo ,  Junghwa Kim ,  Hyangsook Lee ,  Seunggeol Nam

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L23/29

CPC classification number: H01L29/0649 ,  H01L23/291 ,  H01L29/4236 ,  H01L29/66977

Abstract: An electronic device includes a dielectric layer including crystal grains having aligned crystal orientations the dielectric layer may be between a substrate and a gate electrode. The dielectric layer may be between isolated first and second electrodes. A method of manufacturing an electronic device may include preparing a substrate having a channel layer, forming the dielectric layer on the channel layer, and forming a gate electrode on the dielectric layer.

公开(公告)号：US10770768B2

公开(公告)日：2020-09-08

申请号：US15354539

申请日：2016-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insun Jung ,  Hyukjae Kwon ,  Mokwon Kim ,  Junghwa Kim ,  Sunjung Byun ,  Daeun Yu ,  Dongjin Yun ,  Hyangsook Lee

IPC: H01M12/08 ,  H01M12/06 ,  H01M4/88 ,  H01M4/86 ,  H01M4/96

Abstract: A metal-air battery includes an anode portion including a metal; a cathode portion including a porous layer, wherein the porous layer includes a reduced non-stacked graphene oxide; and an electrolyte disposed between the anode portion and the cathode portion.