公开(公告)号：US12278260B2

公开(公告)日：2025-04-15

申请号：US17407653

申请日：2021-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon Na ,  Kiyoung Lee ,  Jooho Lee ,  Myoungho Jeong

IPC: H01G4/30 ,  H01L49/02 ,  H10N70/00 ,  H10N70/20

Abstract: A capacitor includes a first electrode including a first reinforcement material having a perovskite crystal structure; and a first metallic material having a perovskite crystal structure; a second electrode on the first electrode; and a dielectric layer between the first electrode and the second electrode, wherein the first metallic material has greater a greater electronegativity than that of the first reinforcement material.

公开(公告)号：US11935916B2

公开(公告)日：2024-03-19

申请号：US18154218

申请日：2023-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyangsook Lee ,  Junghwa Kim ,  Eunha Lee ,  Jeonggyu Song ,  Jooho Lee ,  Myoungho Jeong

IPC: H01L29/08 ,  H01L21/02 ,  H01L49/02

CPC classification number: H01L28/55 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02433 ,  H01L21/02516 ,  H01L21/02609 ,  H01L28/60 ,  H01L29/0847

Abstract: Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a , , or direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

公开(公告)号：US11569341B2

公开(公告)日：2023-01-31

申请号：US17344475

申请日：2021-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyangsook Lee ,  Junghwa Kim ,  Eunha Lee ,  Jeonggyu Song ,  Jooho Lee ,  Myoungho Jeong

IPC: H01L49/02 ,  H01L29/08 ,  H01L21/02

Abstract: Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a , , or direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

公开(公告)号：US11133179B2

公开(公告)日：2021-09-28

申请号：US16697774

申请日：2019-11-27

Applicant: Samsung Electronics Co., Ltd. ,  Cornell University

Inventor： Kiyoung Lee ,  Woojin Lee ,  Myoungho Jeong ,  Yongsung Kim ,  Eunsun Kim ,  Hyosik Mun ,  Jooho Lee ,  Changseung Lee ,  Kyuho Cho ,  Darrell G. Schlom ,  Craig J. Fennie ,  Natalie M. Dawley ,  Gerhard H. Olsen ,  Zhe Wang

IPC: H01L49/02 ,  H01L21/02

Abstract: A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

公开(公告)号：US20230178585A1

公开(公告)日：2023-06-08

申请号：US18060835

申请日：2022-12-01

Applicant: Samsung Electronics Co., Ltd. ,  Cornell University

Inventor： Kiyoung LEE ,  Darrell G. Schlom ,  Matthew R. Barone ,  Myoungho Jeong

IPC: H10B12/00

CPC classification number: H01L28/56 ,  H01L27/10805 ,  H01L28/60

Abstract: A dielectric thin film includes a stack structure of a perovskite material layer including at least two Group II elements and a rocksalt layer on the perovskite material layer and including at least two Group II elements. A first content ratio of the at least two Group II elements included in the perovskite material layer may be the same as a second content ratio of the at least two Group II elements included in the rocksalt layer.

公开(公告)号：US11658024B2

公开(公告)日：2023-05-23

申请号：US17071310

申请日：2020-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Kyooho Jung ,  Yongsung Kim ,  Jeongil Bang ,  Jooho Lee ,  Junghwa Kim ,  Haeryong Kim ,  Myoungho Jeong

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/768

CPC classification number: H01L21/02181 ,  H01L21/0245 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02667 ,  H01L21/76871 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.