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公开(公告)号：US11848366B2
公开(公告)日：2023-12-19
申请号：US17468098
申请日：2021-09-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehwan Moon , Eunha Lee , Junghwa Kim , Hyangsook Lee , Sanghyun Jo , Jinseong Heo
CPC classification number: H01L29/42364 , H01L21/02304 , H01L21/02356 , H01L21/28158 , H01L28/40 , H01L29/40111 , H01L29/516 , H01L29/518 , H10B12/37
Abstract: Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.
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公开(公告)号：US11569341B2
公开(公告)日：2023-01-31
申请号：US17344475
申请日：2021-06-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyangsook Lee , Junghwa Kim , Eunha Lee , Jeonggyu Song , Jooho Lee , Myoungho Jeong
Abstract: Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a , , or direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.
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公开(公告)号：US12077853B2
公开(公告)日：2024-09-03
申请号：US17132111
申请日：2020-12-23
Inventor： Hyangsook Lee , Hyoungsub Kim , Wonsik Ahn , Eunha Lee
IPC: C23C16/30 , C23C16/02 , C23C16/455 , H01L21/02 , H01L21/285
CPC classification number: C23C16/305 , C23C16/0281 , C23C16/45527 , C23C16/45553 , H01L21/02568 , H01L21/28568
Abstract: Provided are a method of growing a two-dimensional transition metal chalcogenide (TMC) film and a method of manufacturing a device including the two-dimensional TMC film. The method of growing a two-dimensional TMC film includes placing a metal layer having a predetermined pattern on a surface of a substrate; separately supplying a chalcogen precursor to a reaction chamber provided with the substrate; supplying a transition metal precursor to the reaction chamber; and evacuating the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber, wherein an amount of the chalcogen precursor and an amount of the transition metal precursor supplied to the reaction chamber may be controlled.
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公开(公告)号：US20230268385A1
公开(公告)日：2023-08-24
申请号：US18309407
申请日：2023-04-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sanghyun Jo , Eunha Lee , Jinseong Heo , Junghwa Kim , Hyangsook Lee , Seunggeol Nam
IPC: H01L29/06 , H01L23/29 , H01L29/423 , H01L29/66
CPC classification number: H01L29/0649 , H01L23/291 , H01L29/4236 , H01L29/66977
Abstract: An electronic device includes a dielectric layer including crystal grains having aligned crystal orientations the dielectric layer may be between a substrate and a gate electrode. The dielectric layer may be between isolated first and second electrodes. A method of manufacturing an electronic device may include preparing a substrate having a channel layer, forming the dielectric layer on the channel layer, and forming a gate electrode on the dielectric layer.
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公开(公告)号：US11145731B2
公开(公告)日：2021-10-12
申请号：US16923514
申请日：2020-07-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehwan Moon , Eunha Lee , Junghwa Kim , Hyangsook Lee , Sanghyun Jo , Jinseong Heo
IPC: H01L21/02 , H01L29/423 , H01L21/28 , H01L27/108 , H01L49/02 , H01L29/51
Abstract: Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.
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Patent Agency Ranking
公开(公告)号：US12034036B2
公开(公告)日：2024-07-09
申请号：US17334030
申请日：2021-05-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeonggyu Song , Younsoo Kim , Haeryong Kim , Boeun Park , Eunha Lee , Jooho Lee , Hyangsook Lee , Yong-Hee Cho , Eunae Cho
CPC classification number: H01L28/65 , H01L28/56 , H01L29/0847
Abstract: A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.
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公开(公告)号：US11935916B2
公开(公告)日：2024-03-19
申请号：US18154218
申请日：2023-01-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyangsook Lee , Junghwa Kim , Eunha Lee , Jeonggyu Song , Jooho Lee , Myoungho Jeong
CPC classification number: H01L28/55 , H01L21/02181 , H01L21/02189 , H01L21/02433 , H01L21/02516 , H01L21/02609 , H01L28/60 , H01L29/0847
Abstract: Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a , , or direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.
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公开(公告)号：US11005122B2
公开(公告)日：2021-05-11
申请号：US16183853
申请日：2018-11-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngsuk Jung , Boksoon Kwon , Eunha Lee , Seongho Jeon , Heechul Jung , Sungnim Jo , Sungsoo Han
Abstract: Battery housing structures and battery apparatuses including the same are provided. A battery housing structure may include a case including an accommodation region in which a battery unit is accommodated, and an elastic member assembly provided in the case and configured to apply a pressure to the battery unit accommodated in the accommodation region. The elastic member assembly may include at least one first elastic member having an elastic coefficient that increases when a displacement increases and at least one second elastic member having an elastic coefficient that decreases when a displacement increases. The at least one first elastic member and the at least one second elastic member may have different structures or may be arranged in different directions.
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公开(公告)号：US11676999B2
公开(公告)日：2023-06-13
申请号：US17072737
申请日：2020-10-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sanghyun Jo , Eunha Lee , Jinseong Heo , Junghwa Kim , Hyangsook Lee , Seunggeol Nam
IPC: H01L29/66 , H01L29/423 , H01L29/06 , H01L23/29
CPC classification number: H01L29/0649 , H01L23/291 , H01L29/4236 , H01L29/66977
Abstract: An electronic device includes a dielectric layer including crystal grains having aligned crystal orientations the dielectric layer may be between a substrate and a gate electrode. The dielectric layer may be between isolated first and second electrodes. A method of manufacturing an electronic device may include preparing a substrate having a channel layer, forming the dielectric layer on the channel layer, and forming a gate electrode on the dielectric layer.
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公开(公告)号：US11150170B2
公开(公告)日：2021-10-19
申请号：US16381214
申请日：2019-04-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Boksoon Kwon , Youngsuk Jung , Heechul Jung , Eunha Lee , Seongho Jeon , Sungsoo Han
Abstract: An apparatus for measuring a deformation stiffness of an article includes a force measuring means configured to measure a force generated in a thickness direction of the article; a thickness measuring means configured to measure a thickness of the article; and a data processor configured to differentiate force with respect to thickness to calculate the deformation stiffness of the article, wherein each of the force and the thickness are a result of a volume change of the article.
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