公开(公告)号：US10266407B2

公开(公告)日：2019-04-23

申请号：US14703237

申请日：2015-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Yun Kim ,  Sang Il Kim ,  Sung Woo Hwang ,  Yoon Chul Son ,  Yong-Hee Cho ,  Jae-Young Choi

IPC: C01B19/00 ,  H01B1/06 ,  C30B29/46 ,  C23C14/06 ,  C23C14/28 ,  H01B1/00

Abstract: An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure MeCha  Chemical Formula 1 wherein, Me is Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu; Ch is sulfur, selenium, or tellurium; and a is an integer ranging from 1 to 3.

公开(公告)号：US12087810B2

公开(公告)日：2024-09-10

申请号：US17715389

申请日：2022-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong Kim ,  Changsoo Lee ,  Yongsung Kim ,  Euncheol Do ,  Jooho Lee ,  Yong-Hee Cho

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H01L28/65 ,  H01L28/75 ,  H10B12/30

Abstract: A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.

公开(公告)号：US12034036B2

公开(公告)日：2024-07-09

申请号：US17334030

申请日：2021-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Younsoo Kim ,  Haeryong Kim ,  Boeun Park ,  Eunha Lee ,  Jooho Lee ,  Hyangsook Lee ,  Yong-Hee Cho ,  Eunae Cho

IPC: H01L29/08 ,  H01L49/02

CPC classification number: H01L28/65 ,  H01L28/56 ,  H01L29/0847

Abstract: A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.

公开(公告)号：US11817475B2

公开(公告)日：2023-11-14

申请号：US17465223

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Yong-Hee Cho ,  Seungwoo Jang ,  Younggeun Park ,  Jooho Lee

IPC: H01L29/792 ,  H01L49/02

CPC classification number: H01L28/55 ,  H01L28/65 ,  H01L29/792

Abstract: A semiconductor device includes a first electrode; a second electrode which is apart from the first electrode; and a dielectric layer between the first electrode and the second electrode. The dielectric layer may include a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and co-dopants including a Group 3 element and a Group 5 element. The Group 3 element may include Sc, Y, B, Al, Ga, In, and/or Tl, and the Group 5 element may include V, Nb, Ta, N, P, As, Sb, and/or Bi.

公开(公告)号：USD944247S1

公开(公告)日：2022-02-22

申请号：US29738538

申请日：2020-06-18

Applicant: Samsung Electronics Co., Ltd.

Designer： Yong-Hee Cho ,  Myung-Kyu Kim

公开(公告)号：US20240105764A1

公开(公告)日：2024-03-28

申请号：US18168068

申请日：2023-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoo LEE ,  Jinhong Kim ,  Yong-Hee Cho ,  Cheheung Kim ,  Jooho Lee

IPC: H10B12/00

CPC classification number: H01L28/75 ,  H10B12/31 ,  H10B12/34

Abstract: A capacitor includes a lower electrode, an upper electrode disposed to face the lower electrode, and a dielectric layer between the lower electrode and the upper electrode. The lower electrode includes a first lower electrode layer apart from the dielectric layer and a second lower electrode layer between the first lower electrode layer and the dielectric layer. The second lower electrode layer includes vanadium oxide.

公开(公告)号：US20230402231A1

公开(公告)日：2023-12-14

申请号：US18312827

申请日：2023-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhong Kim ,  Changsoo Lee ,  Cheheung Kim ,  Jooho Lee ,  Yong-Hee Cho

IPC: H01G4/33 ,  H01G4/008 ,  H01G4/10 ,  H10B12/00

CPC classification number: H01G4/33 ,  H01G4/008 ,  H01G4/10 ,  H10B12/31 ,  H10B12/033 ,  G11C11/401

Abstract: A capacitor including a first thin-film electrode layer, a second thin-film electrode layer, a dielectric layer between the first and second thin-film electrode layers, and a first interlayer between the first thin-film electrode layer and the dielectric layer and/or between the second thin-film electrode layer and the dielectric layer may be provided. The first interlayer includes first metal oxide, at least one of the first and second thin-film electrode layers includes second metal having a conductive rutile crystal structure, the second metal oxide includes non-noble metal, the dielectric layer includes third metal oxide having a dielectric rutile crystal structure, and the first metal oxide, the second metal oxide, and third metal oxide have different compositions from each other, the first metal oxide includes GeO2, the third metal oxide includes TiO2, and a thickness of the first interlayer is smaller than that of the dielectric layer.

公开(公告)号：US20230163188A1

公开(公告)日：2023-05-25

申请号：US18058791

申请日：2022-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woochul LEE ,  Yongsung Kim ,  Jiwoon Park ,  Jooho Lee ,  Yong-Hee Cho

IPC: H01L29/51 ,  H01L27/108 ,  H01L29/40

CPC classification number: H01L29/513 ,  H01L27/10814 ,  H01L27/10823 ,  H01L29/401

Abstract: Disclosed are a layer structure including a dielectric layer, a method of manufacturing the dielectric layer, an electronic device including the dielectric layer, and an electronic apparatus including the electronic device. The dielectric layer according to at least one embodiment includes a first layer having a dielectric constant greater than that of silicon oxide and is undoped, a second layer configured to enhance a rutile phase of the first layer, and a third layer configured to increase a bandgap of the first layer.
The method of manufacturing a dielectric layer according to an embodiment includes forming a first layer having a dielectric constant greater than that of silicon oxide; forming a phase stabilization layer for stabilizing a rutile phase of the first layer and forming a high-bandgap layer for increasing a bandgap of the first layer.

公开(公告)号：US09412900B2

公开(公告)日：2016-08-09

申请号：US14603103

申请日：2015-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Hee Cho ,  Sungjin Kim ,  Munbo Shim ,  Yukeun Eugene Pak

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/16

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/16 ,  H01L33/32

Abstract: Example embodiments relate to a green-light emitting device including a quaternary quantum well on a vicinal c-plane. The light-emitting device includes a substrate having a vicinal c-plane surface and a light-emitting layer on the vicinal c-plane surface of the substrate. The light-emitting layer includes a quantum well layer of AlxInyGa1-x-yN and quantum barrier layers of InzGa1-zN disposed on and under the quantum well layer respectively, and 0

Abstract translation: 示例性实施例涉及在邻C平面上包括四元量子阱的绿色发光器件。 发光装置包括具有邻C面的基板和位于基板的邻近c面的发光层。 发光层包括分别设置在量子阱层上和下方的Al x In y Ga 1-x-y N的量子阱层和In z Ga 1-z N的量子势垒层，0

公开(公告)号：USD761751S1

公开(公告)日：2016-07-19

申请号：US29489784

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Designer： Yong-Hee Cho