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1.发明授权Green-light emitting device including quaternary quantum well on vicinal c-plane 有权绿色发光器件包括在邻C平面上的四次量子阱公开(公告)号：US09412900B2
公开(公告)日：2016-08-09
申请号：US14603103
申请日：2015-01-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong-Hee Cho , Sungjin Kim , Munbo Shim , Yukeun Eugene Pak
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/16 , H01L33/32
Abstract: Example embodiments relate to a green-light emitting device including a quaternary quantum well on a vicinal c-plane. The light-emitting device includes a substrate having a vicinal c-plane surface and a light-emitting layer on the vicinal c-plane surface of the substrate. The light-emitting layer includes a quantum well layer of AlxInyGa1-x-yN and quantum barrier layers of InzGa1-zN disposed on and under the quantum well layer respectively, and 0
Abstract translation: 示例性实施例涉及在邻C平面上包括四元量子阱的绿色发光器件。 发光装置包括具有邻C面的基板和位于基板的邻近c面的发光层。 发光层包括分别设置在量子阱层上和下方的Al x In y Ga 1-x-y N的量子阱层和In z Ga 1-z N的量子势垒层，0
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