公开(公告)号：US11817475B2

公开(公告)日：2023-11-14

申请号：US17465223

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Yong-Hee Cho ,  Seungwoo Jang ,  Younggeun Park ,  Jooho Lee

IPC: H01L29/792 ,  H01L49/02

CPC classification number: H01L28/55 ,  H01L28/65 ,  H01L29/792

Abstract: A semiconductor device includes a first electrode; a second electrode which is apart from the first electrode; and a dielectric layer between the first electrode and the second electrode. The dielectric layer may include a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and co-dopants including a Group 3 element and a Group 5 element. The Group 3 element may include Sc, Y, B, Al, Ga, In, and/or Tl, and the Group 5 element may include V, Nb, Ta, N, P, As, Sb, and/or Bi.

公开(公告)号：US20250020998A1

公开(公告)日：2025-01-16

申请号：US18633948

申请日：2024-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungoh Kim ,  Jaemyoung Kim ,  Seungwook Shin ,  Wanhee Lim ,  Moohyun Koh ,  Minsoo Kim ,  Seungwoo Jang ,  Suk Koo Hong

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: A photoresist composition includes an organometallic compound, which includes at least one metal-ligand bond including a metal core and at least one organic ligand bonded to the metal core; at least one first organic ligand precursor, which is different in chemical structure from the at least one organic ligand of the organometallic compound, and which includes a phosphonic acid group and has a structure capable of forming a coordination complex with the metal core; and a solvent. A method of manufacturing an integrated circuit device includes forming a photoresist film on a substrate using the photoresist composition, and forming a modified organometallic compound by binding an organic ligand including a phosphonic acid group to the organometallic compound through a ligand exchange between the organometallic compound and the at least one first organic ligand precursor based on chemical equilibrium in the photoresist film.

公开(公告)号：US20230352297A1

公开(公告)日：2023-11-02

申请号：US18183571

申请日：2023-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yurim KIM ,  Teawon Kim ,  Seunghee Lee ,  Seungwoo Jang ,  Yongsuk Tak

IPC: H01L21/02

CPC classification number: H01L21/02194 ,  H01L21/02205

Abstract: A method of manufacturing a semiconductor device including providing a first precursor on a substrate to adsorb a first element of the first precursor onto a first region of the substrate, providing a second precursor on the substrate to adsorb a second element of the second precursor onto a second region of the substrate, the second region being different from the first region, and providing a reactant including oxygen on the substrate to form an oxide semiconductor layer including the first element of the first precursor, the second element of the second precursor, and the oxygen of the reactant may be provided.

公开(公告)号：US20240079498A1

公开(公告)日：2024-03-07

申请号：US18236623

申请日：2023-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghee Lee ,  Yurim Kim ,  Teawon Kim ,  Yongsuk Tak ,  Seungwoo Jang

IPC: H01L29/786 ,  H10B12/00

CPC classification number: H01L29/7869 ,  H10B12/315 ,  H10B12/482 ,  H10B12/488

Abstract: Provided is a field effect transistor including a gate electrode layer, an oxide semiconductor layer including gallium (Ga) and at least one metal element selected from indium (In) and zinc (Zn), and a dielectric layer between the gate electrode layer and the oxide semiconductor layer, wherein the oxide semiconductor layer includes a sub semiconductor layer in contact with the dielectric layer and a main semiconductor layer spaced apart from the dielectric layer with the sub semiconductor layer therebetween, the sub semiconductor layer has a first Ga content, and the first Ga content of the sub semiconductor layer is greater than contents of other metal elements included in the sub semiconductor layer and decreases as a distance from an interface of the sub semiconductor layer in contact with the dielectric layer increases.

公开(公告)号：US11749714B2

公开(公告)日：2023-09-05

申请号：US17853290

申请日：2022-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil Bang ,  Seungwoo Jang ,  Hyosik Mun ,  Younggeun Park ,  Jooho Lee

IPC: H01L21/00 ,  H01L49/02 ,  H10B53/30 ,  H01L21/02

CPC classification number: H01L28/60 ,  H01L28/56 ,  H10B53/30 ,  H01L21/02197 ,  H01L21/02266

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

公开(公告)号：US11417724B2

公开(公告)日：2022-08-16

申请号：US17096239

申请日：2020-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil Bang ,  Seungwoo Jang ,  Hyosik Mun ,  Younggeun Park ,  Jooho Lee

IPC: H01L21/00 ,  H01L49/02 ,  H01L27/11507 ,  H01L21/02

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

公开(公告)号：US20240276711A1

公开(公告)日：2024-08-15

申请号：US18380848

申请日：2023-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yurim Kim ,  Seunghee Lee ,  Seungwoo Jang ,  Yongsuk Tak

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/0335 ,  H10B12/315

Abstract: The semiconductor device may include a bit line on a substrate, a gate electrode on the bit line, a gate insulation pattern on a sidewall of the gate electrode, a first channel contacting an upper surface of the bit line and the sidewall of the gate insulation pattern and a contact plug contacting an upper surface of the first channel. The first channel may include a spinel IGZO.

公开(公告)号：US11749713B2

公开(公告)日：2023-09-05

申请号：US17851836

申请日：2022-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongil Bang ,  Seungwoo Jang ,  Hyosik Mun ,  Younggeun Park ,  Jooho Lee

IPC: H01L21/00 ,  H01L49/02 ,  H10B53/30 ,  H01L21/02

CPC classification number: H01L28/60 ,  H01L28/56 ,  H10B53/30 ,  H01L21/02197 ,  H01L21/02266

Abstract: A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.