公开(公告)号：US20250020997A1

公开(公告)日：2025-01-16

申请号：US18632766

申请日：2024-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suk Koo Hong ,  Jaemyoung Kim ,  Taegeun Seong ,  Minyoung Lee ,  Moohyun Koh ,  Kyungoh Kim ,  Minsoo Kim ,  Changsoo Woo

IPC: G03F7/004 ,  H01L21/027

Abstract: A photoresist composition including an organometallic compound, which includes at least one metal-ligand bond, a metal core, and at least one organic ligand bonded to the metal core; at least one first organic ligand precursor, which is different in chemical structure from the at least one organic ligand of the organometallic compound, and which includes a sulfonic acid group and has a structure capable of forming a coordination complex with the metal core; and a solvent. A method of manufacturing an integrated circuit device that includes forming a photoresist film on a substrate by use of the photoresist composition and forming a modified organometallic compound by binding an organic ligand including a sulfonic acid group to the organometallic compound through a ligand exchange between the organometallic compound and the at least one first organic ligand precursor based on chemical equilibrium in the photoresist film.

公开(公告)号：US11681219B2

公开(公告)日：2023-06-20

申请号：US16991281

申请日：2020-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan Kim ,  Su Min Kim ,  Ju-Young Kim ,  Jinjoo Kim ,  Hyunwoo Kim ,  Juhyeon Park ,  Hyunji Song ,  Songse Yi ,  Suk Koo Hong

IPC: G03F7/004 ,  C08L35/00 ,  C07C381/12 ,  C08L25/06

CPC classification number: G03F7/0045 ,  C07C381/12 ,  C08L25/06 ,  C08L35/00

Abstract: A resist composition including a polymer; and a compound represented by Formula 1,






in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,

公开(公告)号：US20250020998A1

公开(公告)日：2025-01-16

申请号：US18633948

申请日：2024-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungoh Kim ,  Jaemyoung Kim ,  Seungwook Shin ,  Wanhee Lim ,  Moohyun Koh ,  Minsoo Kim ,  Seungwoo Jang ,  Suk Koo Hong

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: A photoresist composition includes an organometallic compound, which includes at least one metal-ligand bond including a metal core and at least one organic ligand bonded to the metal core; at least one first organic ligand precursor, which is different in chemical structure from the at least one organic ligand of the organometallic compound, and which includes a phosphonic acid group and has a structure capable of forming a coordination complex with the metal core; and a solvent. A method of manufacturing an integrated circuit device includes forming a photoresist film on a substrate using the photoresist composition, and forming a modified organometallic compound by binding an organic ligand including a phosphonic acid group to the organometallic compound through a ligand exchange between the organometallic compound and the at least one first organic ligand precursor based on chemical equilibrium in the photoresist film.

公开(公告)号：US10381361B2

公开(公告)日：2019-08-13

申请号：US15455600

申请日：2017-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk Koo Hong ,  Miyeong Kang ,  Hyosung Lee ,  Kyoungyong Cho ,  Sunkak Jo

IPC: G03F7/00 ,  H01L27/11548 ,  H01L21/311 ,  H01L21/027 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11575 ,  G03F7/038 ,  G03F7/40 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075

Abstract: Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.

公开(公告)号：US10319735B2

公开(公告)日：2019-06-11

申请号：US15455667

申请日：2017-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk Koo Hong ,  Miyeong Kang ,  Hyosung Lee ,  Kyoungyong Cho ,  Bora Kim ,  Hyeji Kim ,  Sunkak Jo

IPC: H01L21/311 ,  H01L27/11582 ,  H01L21/28 ,  H01L27/11556 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

Abstract: Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.