公开(公告)号：US20250020997A1

公开(公告)日：2025-01-16

申请号：US18632766

申请日：2024-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suk Koo Hong ,  Jaemyoung Kim ,  Taegeun Seong ,  Minyoung Lee ,  Moohyun Koh ,  Kyungoh Kim ,  Minsoo Kim ,  Changsoo Woo

IPC: G03F7/004 ,  H01L21/027

Abstract: A photoresist composition including an organometallic compound, which includes at least one metal-ligand bond, a metal core, and at least one organic ligand bonded to the metal core; at least one first organic ligand precursor, which is different in chemical structure from the at least one organic ligand of the organometallic compound, and which includes a sulfonic acid group and has a structure capable of forming a coordination complex with the metal core; and a solvent. A method of manufacturing an integrated circuit device that includes forming a photoresist film on a substrate by use of the photoresist composition and forming a modified organometallic compound by binding an organic ligand including a sulfonic acid group to the organometallic compound through a ligand exchange between the organometallic compound and the at least one first organic ligand precursor based on chemical equilibrium in the photoresist film.

公开(公告)号：US20250020998A1

公开(公告)日：2025-01-16

申请号：US18633948

申请日：2024-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungoh Kim ,  Jaemyoung Kim ,  Seungwook Shin ,  Wanhee Lim ,  Moohyun Koh ,  Minsoo Kim ,  Seungwoo Jang ,  Suk Koo Hong

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: A photoresist composition includes an organometallic compound, which includes at least one metal-ligand bond including a metal core and at least one organic ligand bonded to the metal core; at least one first organic ligand precursor, which is different in chemical structure from the at least one organic ligand of the organometallic compound, and which includes a phosphonic acid group and has a structure capable of forming a coordination complex with the metal core; and a solvent. A method of manufacturing an integrated circuit device includes forming a photoresist film on a substrate using the photoresist composition, and forming a modified organometallic compound by binding an organic ligand including a phosphonic acid group to the organometallic compound through a ligand exchange between the organometallic compound and the at least one first organic ligand precursor based on chemical equilibrium in the photoresist film.

公开(公告)号：US20230288799A1

公开(公告)日：2023-09-14

申请号：US18061859

申请日：2022-12-05

Applicant: Samsung SDI Co., Ltd. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungrang Moon ,  Youngkwon Kim ,  Ryunmin Heo ,  Minyoung Lee ,  Minsoo Kim ,  Kyuwon Lee ,  Jung Min Choi ,  Cheol Hong Park ,  Moohyun Koh ,  Sang Won Bae ,  Jungah Kim

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/162 ,  G03F7/168 ,  G03F7/325

Abstract: A method of forming patterns includes coating a metal-containing resist composition on a substrate, sequentially coating two types of compositions for removing edge beads along an edge of the substrate, performing a heat-treatment including drying and heating to form a metal-containing resist film on the substrate, and exposing and developing the metal-containing resist film to form a resist pattern; or coating a metal-containing resist composition on a substrate, coating a composition for removing edge beads along an edge of the substrate, performing a heat-treatment including drying and heating to form a metal-containing resist film on the substrate, exposing the metal-containing resist film, and developing with a developing solution composition to form a resist pattern, wherein details of the two types of compositions for removing edge beads and the developing solution composition are as described in the specification.