Two-dimensional array-based neuromorphic processor and implementing method

    公开(公告)号:US11868874B2

    公开(公告)日:2024-01-09

    申请号:US18120137

    申请日:2023-03-10

    CPC classification number: G06N3/063 G06F7/50 G06F7/523 G06F2207/4824

    Abstract: A 2D array-based neuromorphic processor includes: axon circuits each being configured to receive a first input corresponding to one bit from among bits indicating n-bit activation; first direction lines extending in a first direction from the axon circuits; second direction lines intersecting the first direction lines; synapse circuits disposed at intersections of the first direction lines and the second direction lines, and each being configured to store a second input corresponding to one bit from among bits indicating an m-bit weight and to output operation values of the first input and the second input; and neuron circuits connected to the first or second direction lines, each of the neuron circuits being configured to receive an operation value output from at least one of the synapse circuits, based on time information assigned individually to the synapse circuits, and to perform an arithmetic operation by using the operation values.

    CAPACITOR, ELECTRONIC DEVICE INCLUDING THE SAME, AND METHOD OF PREPARING THE CAPACITOR

    公开(公告)号:US20230402231A1

    公开(公告)日:2023-12-14

    申请号:US18312827

    申请日:2023-05-05

    Abstract: A capacitor including a first thin-film electrode layer, a second thin-film electrode layer, a dielectric layer between the first and second thin-film electrode layers, and a first interlayer between the first thin-film electrode layer and the dielectric layer and/or between the second thin-film electrode layer and the dielectric layer may be provided. The first interlayer includes first metal oxide, at least one of the first and second thin-film electrode layers includes second metal having a conductive rutile crystal structure, the second metal oxide includes non-noble metal, the dielectric layer includes third metal oxide having a dielectric rutile crystal structure, and the first metal oxide, the second metal oxide, and third metal oxide have different compositions from each other, the first metal oxide includes GeO2, the third metal oxide includes TiO2, and a thickness of the first interlayer is smaller than that of the dielectric layer.

    ACOUSTIC SENSOR ASSEMBLY AND METHOD OF SENSING SOUND USING THE SAME

    公开(公告)号:US20220214211A1

    公开(公告)日:2022-07-07

    申请号:US17348184

    申请日:2021-06-15

    Abstract: An acoustic sensor assembly includes a non-directional acoustic sensor having a first directional pattern, a plurality of directional acoustic sensors surrounding the non-directional acoustic sensor and including a plurality of resonators having different resonance frequencies from each other, each of the plurality of directional acoustic sensors having a second directional pattern, and a processor configured to obtain output signals from the non-directional acoustic sensor and the plurality of directional acoustic sensors. The processor is further configured to calculate an acoustic signal having directivity by selecting any one or any combination of the obtained output signals or selectively combining the obtained output signals, and obtain sound around the acoustic sensor assembly, using the calculated acoustic signal.

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