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公开(公告)号：US11180373B2
公开(公告)日：2021-11-23
申请号：US16183146
申请日：2018-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunjae Song , Keunwook Shin , Hyeonjin Shin , Changseok Lee , Changhyun Kim , Kyungeun Byun , Seungwon Lee , Eunkyu Lee
IPC: H01L23/00 , C01B32/186 , H01L23/532 , H01L21/285 , H01L21/768 , C23C16/26 , C23C16/50 , H01L27/24 , C01B32/182 , B82Y30/00 , B82Y40/00
Abstract: Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.
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2.发明授权公开(公告)号：US10928723B2
公开(公告)日：2021-02-23
申请号：US16708969
申请日：2019-12-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeonjin Shin , Hyunjae Song , Seongjun Park , Keunwook Shin , Changseok Lee , Dongwook Lee , Minsu Seol , Sangwon Kim , Seongjun Jeong
Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.
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3.发明授权公开(公告)号：US10850985B2
公开(公告)日：2020-12-01
申请号：US16233513
申请日：2018-12-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Alum Jung , Keunwook Shin , Kyung-Eun Byun , Hyeonjin Shin , Hyunseok Lim , Seunggeol Nam , Hyunjae Song , Yeonchoo Cho
IPC: H01L29/12 , C01B32/186 , C23C16/26 , C23C16/505 , C23C16/511 , H01L21/02 , H01L29/16 , H01L29/06 , H01L29/04
Abstract: A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.
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公开(公告)号：US10692622B2
公开(公告)日：2020-06-23
申请号：US15928397
申请日：2018-03-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Inhyuk Son , Hyunjae Song , Inyong Song , Jaeman Choi , Seungsik Hwang , Junhwan Ku , Jonghwan Park , Yeonji Chung
IPC: H01B1/04 , H01M4/134 , B82Y30/00 , B82Y40/00 , H01M4/36 , H01M4/38 , H01M4/48 , H01M4/587 , H01B13/00 , H01M4/04 , H01M4/1393 , H01M4/62
Abstract: A composite including: silicon (Si); a silicon oxide of the formula SiOx, wherein 0
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公开(公告)号：US10522664B2
公开(公告)日：2019-12-31
申请号：US15904967
申请日：2018-02-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungeun Byun , Jisoo Kyoung , Seongjun Park , Hyeonjin Shin , Hyunjae Song , Jaeho Lee
IPC: H01L31/072 , H01L31/109 , H01L31/0328 , H01L29/792 , H01L29/66 , H01L29/78 , H01L29/45
Abstract: An electronic device includes a semiconductor layer, a tunneling layer formed of a material including a two-dimensional (2D) material so as to directly contact a certain region of the semiconductor layer, and a metal layer formed on the tunneling layer.
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Patent Agency Ranking
公开(公告)号：US20190137864A1
公开(公告)日：2019-05-09
申请号：US16235446
申请日：2018-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunjae Song , Hyeonjin Shin
CPC classification number: G03F1/62 , G03F1/22 , G03F1/48 , G03F1/64 , G03F7/70058
Abstract: Provided are a pellicle for a photomask, which protects the photomask from external contamination and an exposure apparatus including the pellicle for the photomask. The pellicle for the photomask includes a pellicle membrane provided spaced apart from the photomask. The pellicle membrane includes a semiconductor having a two-dimensional (2D) crystalline structure.
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公开(公告)号：US11626502B2
公开(公告)日：2023-04-11
申请号：US17398363
申请日：2021-08-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeonjin Shin , Sangwon Kim , Kyung-Eun Byun , Hyunjae Song , Keunwook Shin , Eunkyu Lee , Changseok Lee , Yeonchoo Cho , Taejin Choi
IPC: H01L29/45 , H01L29/40 , H01L29/15 , H01L27/108
Abstract: An interconnect structure for reducing a contact resistance, an electronic device including the same, and a method of manufacturing the interconnect structure are provided. The interconnect structure includes a semiconductor layer including a first region having a doping concentration greater than a doping concentration of a peripheral region of the semiconductor layer, a metal layer facing the semiconductor layer, a graphene layer between the semiconductor layer and the metal layer, and a conductive metal oxide layer between the graphene layer and the semiconductor and covering the first region.
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公开(公告)号：US10811604B2
公开(公告)日：2020-10-20
申请号：US16144257
申请日：2018-09-27
Inventor： Minhyun Lee , Seongjun Park , Hyunjae Song , Hyeonjin Shin , Kibum Kim , Sanghun Lee , Yunho Kang
IPC: H01L45/00 , H01L21/768 , G11C13/00
Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
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9.发明授权公开(公告)号：US10684560B2
公开(公告)日：2020-06-16
申请号：US15917947
申请日：2018-03-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeonjin Shin , Hyunjae Song , Minhyun Lee , Yeonchoo Cho
Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane and a passivation member. The pellicle membrane may include a carbon-based material having defects. The passivation member may cover the defects of the carbon-based material. The passivation member may include an inorganic material. The passivation member may be disposed on one or two surfaces of the pellicle membrane. The pellicle for the photomask may be applied to extreme ultraviolet (EUV) lithography.
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公开(公告)号：US20190123273A1
公开(公告)日：2019-04-25
申请号：US16144257
申请日：2018-09-27
Inventor： Minhyun Lee , Seongjun Park , Hyunjae Song , Hyeonjin Shin , Kibum Kim , Sanghun Lee , Yunho Kang
IPC: H01L45/00 , H01L21/768 , G11C13/00
Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
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