公开(公告)号：US12255244B2

公开(公告)日：2025-03-18

申请号：US18171502

申请日：2023-02-20

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Minhyun Lee ,  Minsu Seol ,  Ho Won Jang ,  Yeonchoo Cho ,  Hyeonjin Shin

IPC: H01L29/423 ,  H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66

Abstract: Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a first channel layer; a second channel layer disposed on the first channel layer; a gate insulating layer disposed on the second channel layer; a gate electrode disposed on the gate insulating layer; a first electrode electrically connected to the first channel layer; and a second electrode electrically connected to the second channel layer. Here, the gate insulating layer may include an insulative, high-k, two-dimensional material.

公开(公告)号：US12199129B2

公开(公告)日：2025-01-14

申请号：US17313464

申请日：2021-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Minsu Seol ,  Hyeonjin Shin

IPC: H01L27/146 ,  H04N23/11

Abstract: An image sensor includes a visible light sensor portion and an infrared sensor portion arranged on the visible light sensor portion. The visible light sensor portion includes a first sensor layer and a first signal wiring layer, wherein a plurality of visible light sensing elements are arrayed in the first sensor layer and the first signal wiring layer is configured to process a signal output from the first sensor layer. The infrared sensor portion includes a second sensor layer in which a plurality of infrared sensing elements are arrayed, and a second signal wiring layer configured to process a signal output from the second sensor layer. The infrared sensor portion and the visible light sensor portion form a single monolithic structure which is effective in obtaining high resolution.

公开(公告)号：US12122732B2

公开(公告)日：2024-10-22

申请号：US17211174

申请日：2021-03-24

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Sangwon Kim ,  Changsik Song ,  Juhyen Lee ,  Hyejin Cho ,  Hyeonjin Shin ,  Minsu Seol ,  Dongwook Lee

IPC: C07C15/38 ,  H01L51/00 ,  H10K85/60 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/18

CPC classification number: C07C15/38 ,  H10K85/622 ,  H10K85/624 ,  H10K50/15 ,  H10K50/16 ,  H10K50/171 ,  H10K50/18

Abstract: Provided are a functionalized polycyclic aromatic hydrocarbon compound and a light-emitting device including the same. The functionalized polycyclic aromatic hydrocarbon compound is structurally stable, and exhibits high light-emission characteristics since aggregation caused by π-π stacking is inhibited, and thus may have high efficiency and long lifespan characteristics.

公开(公告)号：US12087818B2

公开(公告)日：2024-09-10

申请号：US17967200

申请日：2022-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Minsu Seol ,  Hyeonjin Shin

IPC: H01L29/10 ,  H01L29/36 ,  H01L29/423

CPC classification number: H01L29/1033 ,  H01L29/36 ,  H01L29/4232

Abstract: A transistor including at least one two-dimensional (2D) channel is disclosed. A transistor according to some example embodiments includes first to third electrodes separated from each other, and a channel layer that is in contact with the first and second electrodes, parallel to the third electrode, and includes at least one 2D channel. The at least one 2D channel includes at least two regions having different doping concentrations. A transistor according to some example embodiments includes: first to third electrodes separated from each other; a 2D channel layer that is in contact with the first and second electrodes and parallel to the third electrode; a first doping layer disposed under the 2D channel layer corresponding to the first electrode; and a second doping layer disposed under the 2D channel layer corresponding to the second electrode, wherein the first and second doping layers contact the 2D channel layer.

公开(公告)号：US11532709B2

公开(公告)日：2022-12-20

申请号：US17203010

申请日：2021-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Minsu Seol ,  Yeonchoo Cho ,  Hyeonjin Shin

IPC: H01L29/10 ,  H01L29/24 ,  H01L29/423

Abstract: A field effect transistor includes a substrate, a source electrode and a drain electrode on the substrate and apart from each other in a first direction, a plurality of channel layers, a gate insulating film surrounding each of the plurality of channel layers, and a gate electrode surrounding the gate insulating film. Each of the plurality of channel layers has ends contacting the source electrode and the drain electrode. The plurality of channel layers are spaced apart from each other in a second direction away from the substrate. The plurality of channel layers include a 2D semiconductor material.

公开(公告)号：US11431265B2

公开(公告)日：2022-08-30

申请号：US17007035

申请日：2020-08-31

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyungeun Byun ,  Jaeyoung Kim ,  Minsu Seol ,  Hyeonjin Shin ,  Jeongmin Baik ,  Woojung Yang ,  Byeonguk Ye ,  Jaewon Lee ,  Jinpyo Lee ,  Kyeongnam Kim

IPC: H02N1/04

Abstract: A triboelectric generator includes a first electrode and a second electrode spaced apart from each other, a first charging part on the first electrode, a second charging part on the second electrode, and a grounding unit. The first charging part and the second charging part may be configured to contact each other through a sliding motion. The grounding unit may be configured to intermittently connect a charge reservoir to the second charging part. The grounding unit may be configured to vary the electric potential of the second charging part so as to amplify current flowing between electrodes of the triboelectric generator.

公开(公告)号：US11086223B2

公开(公告)日：2021-08-10

申请号：US16426046

申请日：2019-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwon Kim ,  Minsu Seol ,  Seongjun Park ,  Yeonchoo Cho

IPC: G03F7/36 ,  G03F7/11 ,  G03F7/09 ,  G03F7/16

Abstract: A hardmask composition may include graphene nanoparticles having a size in a range of about 5 nm to about 100 nm and a solvent.

公开(公告)号：US11034847B2

公开(公告)日：2021-06-15

申请号：US15944920

申请日：2018-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu Seol ,  Sangwon Kim ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Yunseong Lee ,  Seongjun Jeong ,  Alum Jung

IPC: C09D7/63 ,  G03F7/11 ,  G03F7/09 ,  G03F7/07 ,  G03F7/40 ,  C07F3/02 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  H01L21/311 ,  H01L21/3213 ,  G03F7/075

Abstract: Provided are a hardmask composition including a structure represented by Formula 1 and a solvent, a method of forming a pattern using the hardmask composition, and a hardmask formed from the hardmask composition. wherein in Formula 1, R1 to R8, X, and M are described in detail in the detailed description.

公开(公告)号：US11830952B2

公开(公告)日：2023-11-28

申请号：US17014127

申请日：2020-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu Seol ,  Hyeonjin Shin ,  Minseok Yoo ,  Minhyun Lee

IPC: H01L29/786 ,  H01L29/41 ,  H01L29/417 ,  H01L29/24 ,  H01L29/66 ,  H01L29/45 ,  H01L29/06 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/16

CPC classification number: H01L29/78696 ,  H01L21/02417 ,  H01L21/02568 ,  H01L21/823412 ,  H01L29/0665 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/413 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969

Abstract: Provided are two-dimensional material (2D)-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices. A 2D material-based field effect transistor includes a substrate; first to third 2D material layers on the substrate; an insulating layer on the first 2D material layer; a source electrode on the second 2D material layer; a drain electrode on the third 2D material layer; and a gate electrode on the insulating layer. The first 2D material layer is configured to exhibit semiconductor characteristics, and the second and third 2D material layers are metallic 2D material layers. The first 2D material layer may include a first channel layer of a 2D material and a second channel layer of a 2D material. The first 2D material layer may partially overlap the second and third 2D material layers.

公开(公告)号：US11508815B2

公开(公告)日：2022-11-22

申请号：US16928508

申请日：2020-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Minsu Seol ,  Yeonchoo Cho ,  Hyeonjin Shin

IPC: H01L29/10 ,  H01L21/02 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: Provided is a semiconductor device which use a two-dimensional semiconductor material as a channel layer. The semiconductor device includes: a gate electrode on a substrate; a gate dielectric on the gate electrode; a channel layer on the gate dielectric; and a source electrode and a drain electrode that may be electrically connected to the channel layer. The gate dielectric has a shape with a height greater than a width, and the channel layer includes a two-dimensional semiconductor material.