公开(公告)号：US20240290901A1

公开(公告)日：2024-08-29

申请号：US18174359

申请日：2023-02-24

申请人： City University of Hong Kong

发明人： Chung Yin Johnny HO ,  Weijun WANG ,  You MENG ,  Wei WANG

IPC分类号： H01L31/109 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/109 ,  H01L31/0336 ,  H01L31/035209 ,  H01L31/035227 ,  H01L31/1896

摘要： Continuous miniaturization of semiconductor devices is the key to boosting modern electronics development. However, such downscaling strategy has been rarely utilized in photoelectronics and photovoltaics. Here, in this work, a full-vdWs 1D p-Te/2D n-Bi2O2Se heterodiode with a rationally-designed nanoscale ultra-photosensitive channel is reported. Enabled by the dangling bond-free mixed-dimensional vdWs integration, the Te/Bi2O2Se type-II diodes show a high rectification ratio of 3.6×104. Operating with 100 mV reverse bias or in a self-power mode, the photodiodes demonstrated excellent photodetection performances, including high responsivities of 130 A W−1 (100 mV bias) and 768.8 mA W−1 (self-power mode), surpassing most of the reports of other heterostructures. More importantly, a superlinear photoelectric conversion phenomenon is uncovered in these nanoscale full-vdWs photodiodes, in which a model based on the in-gap trap-assisted recombination is proposed for this superlinearity. All these results provide valuable insights in light-matter interactions for further performance enhancement of photoelectronic devices.

公开(公告)号：US20240213391A1

公开(公告)日：2024-06-27

申请号：US18146150

申请日：2022-12-23

申请人： City University of Hong Kong

发明人： Chung Yin Johnny HO ,  Wei WANG ,  Weijun WANG ,  You MENG

IPC分类号： H01L31/113 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/1136 ,  H01L31/03046 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/18

摘要： Mixed-dimensional heterostructure nano-devices with multi-functionality for use in semiconductors. Specifically, a gate-tunable and anti-ambipolar phototransistor is devised based on 1D p-type GaAsSb nanowire/2D n-type MoS2 nanoflake mixed-dimensional van der Waals (vdW) heterojunctions. Methods of making the mixed-dimensional heterostructure nano-devices with multi-functionality, gate-tunability and anti-ambipolar phototransistor.