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    CMOS IMAGE SENSOR HAVING INDENTED PHOTODIODE STRUCTURE
    3.
    发明申请
    CMOS IMAGE SENSOR HAVING INDENTED PHOTODIODE STRUCTURE 审中-公开

    公开(公告)号：US20190103428A1

    公开(公告)日：2019-04-04

    申请号：US16017078

    申请日：2018-06-25

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chia-Yu Wei ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Ping-Hao Lin ,  Hsun-Ying Huang ,  Yen-Liang Lin ,  Yu Ting Kao

    IPC: H01L27/146

    Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

    Semiconductor structure and method for forming the same
    6.
    发明授权
    Semiconductor structure and method for forming the same 有权

    公开(公告)号：US10692826B2

    公开(公告)日：2020-06-23

    申请号：US15906214

    申请日：2018-02-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chia-Yu Wei ,  Cheng-Yuan Li ,  Yen-Liang Lin ,  Kuo-Cheng Lee ,  Hsun-Ying Huang ,  Hsin-Chi Chen

    IPC: H01L23/00 ,  H01L27/146

    Abstract: A semiconductor structure is provided. A first semiconductor device includes a first conductive layer formed over a first substrate; a first etching stop layer formed over the first conductive layer, and the first etching stop layer is in direct contact with the first conductive layer. A first bonding layer is formed over the first etching stop layer, and a first bonding via is formed through the first bonding layer and the first etching stop layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over the second etching stop layer and a second bonding via formed through the second bonding layer and a second etching stop layer. A bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.

    Semiconductor structure and method for forming the same
    8.
    发明授权
    Semiconductor structure and method for forming the same 有权

    公开(公告)号：US11456263B2

    公开(公告)日：2022-09-27

    申请号：US16907838

    申请日：2020-06-22

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chia-Yu Wei ,  Cheng-Yuan Li ,  Yen-Liang Lin ,  Kuo-Cheng Lee ,  Hsun-Ying Huang ,  Hsin-Chi Chen

    IPC: H01L23/00 ,  H01L27/146

    Abstract: A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first bonding layer formed below a first substrate, a first bonding via formed through the first oxide layer and the first bonding layer, a first dummy pad formed in the first bonding layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over a second substrate, a second bonding via formed through the second bonding layer, and a second dummy pad formed in the second bonding layer. The semiconductor structure includes a bonding structure between the first substrate and the second substrate, wherein the bonding structure includes the first bonding via bonded to the second bonding via and the first dummy pad bonded to the second dummy pad.

    CMOS image sensor having indented photodiode structure
    9.
    发明授权
    CMOS image sensor having indented photodiode structure 有权

    公开(公告)号：US11183523B2

    公开(公告)日：2021-11-23

    申请号：US16662453

    申请日：2019-10-24

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chia-Yu Wei ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Ping-Hao Lin ,  Hsun-Ying Huang ,  Yen-Liang Lin ,  Yu Ting Kao

    IPC: H01L27/146

    Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

    CMOS image sensor having indented photodiode structure
    10.
    发明授权
    CMOS image sensor having indented photodiode structure 有权

    公开(公告)号：US10790321B2

    公开(公告)日：2020-09-29

    申请号：US16017078

    申请日：2018-06-25

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chia-Yu Wei ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Ping-Hao Lin ,  Hsun-Ying Huang ,  Yen-Liang Lin ,  Yu Ting Kao

    IPC: H01L27/146

    Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

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