公开(公告)号：US11335721B2

公开(公告)日：2022-05-17

申请号：US14073580

申请日：2013-11-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Su-Hua Chang ,  Chia-Yu Wei ,  Zen-Fong Huang ,  Chi-Cherng Jeng

IPC: H01L27/146 ,  H01L31/0216

Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.

公开(公告)号：US09786710B2

公开(公告)日：2017-10-10

申请号：US14871409

申请日：2015-09-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Su-Hua Chang ,  Volume Chien ,  Yung-Lung Hsu

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor device includes a substrate, a color filter layer, at least a pixel, a main isolation structure and a sub-isolation structure. The color filter layer is disposed over the substrate. The color filter layer includes a first color filter having a single one of primary colors. The pixel is disposed in the substrate and aligned with the first color filter. The main isolation structure surrounds the pixel in the substrate. The sub-isolation structure is disposed to divide the pixel into a plurality of sub-first pixels. The sub-pixels correspond to the first color filter having the single one of primary colors, and each of the sub-first pixels includes a radiation sensor.

公开(公告)号：US09247116B2

公开(公告)日：2016-01-26

申请号：US14211636

申请日：2014-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Volume Chien ,  Su-Hua Chang ,  Zen-Fong Huang ,  Chia-Yu Wei ,  Chi-Cherng Jeng ,  Hsin-Chi Chen

IPC: H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N5/225 ,  H01L31/062 ,  H01L31/113

CPC classification number: H04N5/2254 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685

Abstract: An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.

Abstract translation: 提供了一种用于形成图像传感器装置的图像传感器装置和制造方法。 图像传感器装置包括具有阵列区域和周边区域的半导体基板。 图像传感器装置还包括在半导体衬底的阵列区域中的光感测区域。 图像传感器装置还包括在阵列区域和外围区域上的电介质结构，并且电介质结构具有基本平坦的顶表面。 此外，图像传感器装置包括在电介质结构中的凹槽，并基本上与光感测区域对准。 图像传感器装置还包括位于凹槽中的滤光器和电介质结构中的遮光栅格并围绕滤光器的一部分。

公开(公告)号：US11810939B2

公开(公告)日：2023-11-07

申请号：US17744175

申请日：2022-05-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Su-Hua Chang ,  Chia-Yu Wei ,  Zen-Fong Huang ,  Chi-Cherng Jeng

IPC: H01L27/146 ,  H01L31/0216

CPC classification number: H01L27/1464 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/02164

Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.