公开(公告)号：US20240006427A1

公开(公告)日：2024-01-04

申请号：US18468933

申请日：2023-09-18

申请人： CANON KABUSHIKI KAISHA

发明人： HIROKI HIYAMA ,  MASANORI OGURA ,  SEIICHIRO SAKAI

IPC分类号： H01L27/146 ,  H04N25/00 ,  H04N25/75 ,  H04N25/441 ,  H04N25/771 ,  H04N25/778 ,  H01L27/148

CPC分类号： H01L27/14605 ,  H01L27/14641 ,  H01L27/14603 ,  H01L27/14609 ,  H04N25/00 ,  H04N25/75 ,  H04N25/441 ,  H04N25/771 ,  H04N25/778 ,  H01L27/14806 ,  H01L27/14612 ,  H01L27/14812 ,  H01L27/14621 ,  H01L27/14645

摘要： An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes, plural transfer MOSFETs arranged corresponding to the plural photodiodes, respectively, and a common MOSFET which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

公开(公告)号：US20180308895A1

公开(公告)日：2018-10-25

申请号：US15801418

申请日：2017-11-02

申请人： SK hynix Inc.

发明人： Yeounsoo KIM ,  Donghyun WOO

IPC分类号： H01L27/148

CPC分类号： H01L27/14806 ,  H01L27/146 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H04N5/379

摘要： A stack-type image sensor include a first substrate comprising a photoelectric conversion element and a storage transistor connecting the photoelectric conversion element to a charge storage element; and a second substrate comprising a transfer transistor connecting the charge storage element to a floating diffusion, wherein the first substrate and the second substrate are stacked. The charge storage element comprises: a first electrode and a second electrode positioned adjacent to the first electrode and having a sidewall facing a sidewall of the first electrode, wherein the first electrodes and the second electrodes comprise at least one bonding pad formed in the first or second substrate; and a dielectric layer inserted between the sidewall of the first electrode and the sidewall of the second electrode, which face each other.

公开(公告)号：US10014430B2

公开(公告)日：2018-07-03

申请号：US14411542

申请日：2013-07-10

申请人： Siemens Aktiengesellschaft

发明人： Peter Hackenschmied ,  Edgar Göderer ,  Christian Schröter ,  Matthias Strassburg ,  Stefan Wirth

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/16 ,  H01L31/12 ,  H01L31/09 ,  H01L31/08 ,  H01L31/14 ,  G01N23/046 ,  A61B6/00 ,  G01T1/24

CPC分类号： H01L31/16 ,  A61B6/4208 ,  G01N23/046 ,  G01T1/24 ,  G01T1/244 ,  H01L27/14601 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14806 ,  H01L31/085 ,  H01L31/09 ,  H01L31/125 ,  H01L31/14

摘要： A method is disclosed for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector. A semi-conductor material used for detection purposes is irradiated with additional radiation with an energy level of at least 1.6 eV in order to produce additional charge carriers. A direct-converting X-ray radiation detector is disclosed for detecting X-ray radiation, at least including a semi-conductor material used for X-ray detection and at least one radiation source which irradiates the semi-conductor material with additional radiation, the radiation having an energy level of at least 1.6 eV. A CT system including an X-ray radiation detector is also disclosed.

公开(公告)号：US09929204B2

公开(公告)日：2018-03-27

申请号：US14660570

申请日：2015-03-17

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yong-Chan Kim ,  Seung-Sik Kim ,  Eun-Sub Shim ,  Moo-Sup Lim

IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N5/355

CPC分类号： H01L27/14683 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/3559

摘要： Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.

公开(公告)号：US20180069080A1

公开(公告)日：2018-03-08

申请号：US15679003

申请日：2017-08-16

申请人： ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY

发明人： Zhaoyu He ,  Yong-Hang Zhang

IPC分类号： H01L29/15 ,  H01L29/765 ,  H01L29/205 ,  H01L27/148

CPC分类号： H01L27/148 ,  H01L27/14806 ,  H01L29/157 ,  H01L29/205 ,  H01L29/765

摘要： A CCD with an internal heterostructure well to store the photogenerated carriers is realized by using barrier and absorber semiconductors with a type-II band alignment in nBn or pBp photodetectors to form a specific barrier configured to confine the depletion region and a well to trap and store the photogenerated minority carriers. Depending on the spectral regime, (InAs/InAsSb)/(InAs/AlGaSb) superlattices can be used in the infrared, Si/Ge or AlP/GaP in the visible portion of optical spectrum, and GaN/ZnO in the UV portion. The resulting device not only leverages the advantages of the conventional CCD (such as in-pixel signal integration to suppress the noise), but also boasts an advantageously low operational voltage, thereby ensuring the low power consumption and low band-to-band tunneling current/noise (in particular, for use as an infrared photodetector). In comparison with IR FPAs of related art, the cost of the device is reduced and no flip-chip mount on a read-out integrated circuit is required during the fabrication process.

公开(公告)号：US09905715B2

公开(公告)日：2018-02-27

申请号：US14093172

申请日：2013-11-29

申请人： Infineon Technologies AG

发明人： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

IPC分类号： H01L27/148 ,  H01L31/0352 ,  G01S7/491

CPC分类号： H01L31/035272 ,  G01S7/4914 ,  H01L27/14806

摘要： Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

公开(公告)号：US09818887B2

公开(公告)日：2017-11-14

申请号：US15182200

申请日：2016-06-14

申请人： KLA-Tencor Corporation

发明人： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC分类号： G01N21/88 ,  H01L31/0216 ,  G01N21/95 ,  G01N21/956 ,  H01L27/146

CPC分类号： H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

摘要： An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

公开(公告)号：US09768226B2

公开(公告)日：2017-09-19

申请号：US14132067

申请日：2013-12-18

申请人： Panasonic Corporation

发明人： Yusuke Sakata ,  Mitsuyoshi Mori ,  Yutaka Hirose ,  Hiroshi Masuda ,  Hitoshi Kuriyama ,  Ryohei Miyagawa

IPC分类号： H04N3/14 ,  H01L27/14 ,  H01L27/148 ,  H01L27/146 ,  H01L21/768 ,  H01L23/485

CPC分类号： H01L27/14806 ,  H01L21/76886 ,  H01L23/485 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14665 ,  H01L2924/00 ,  H01L2924/0002

摘要： A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

公开(公告)号：US09749561B2

公开(公告)日：2017-08-29

申请号：US14766788

申请日：2014-02-12

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Hisanori Suzuki ,  Masaharu Muramatsu

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H01L31/062 ,  H01L31/113 ,  H04N5/369 ,  H01L27/148 ,  H04N5/353 ,  H01L27/146

CPC分类号： H04N5/369 ,  H01L27/14683 ,  H01L27/14806 ,  H01L27/14812 ,  H01L27/14831 ,  H01L27/14856 ,  H04N5/353

摘要： A solid-state imaging device includes a light receiving section formed by such exposure as to stitch a plurality of patterns in a first direction on a semiconductor substrate. The light receiving section includes a plurality of pixels disposed in a two-dimensional array in the first direction and a second direction perpendicular to the first direction. Electric charges are transferred in the second direction in each of pixel columns consisting of a plurality of pixels disposed in the second direction, among the plurality of pixels.

公开(公告)号：US09724055B2

公开(公告)日：2017-08-08

申请号：US14201457

申请日：2014-03-07

申请人： Elwha LLC

发明人： Roderick A. Hyde ,  Edward K. Y. Jung ,  Jordin T. Kare ,  Tony S. Pan ,  Charles Whitmer ,  Lowell L. Wood, Jr.

IPC分类号： A61B6/14 ,  H01L27/146 ,  H01L27/148 ,  G21F1/08 ,  G03B42/04 ,  G01T1/24 ,  H01J37/244 ,  H01J37/304 ,  A61B5/00 ,  A61B6/06 ,  A61B6/00 ,  A61B6/10 ,  A61B90/00 ,  G21F1/02

CPC分类号： A61B6/145 ,  A61B5/0088 ,  A61B5/682 ,  A61B6/06 ,  A61B6/107 ,  A61B6/14 ,  A61B6/4035 ,  A61B6/4208 ,  A61B6/467 ,  A61B6/487 ,  A61B6/542 ,  A61B6/547 ,  A61B6/587 ,  A61B2090/0436 ,  A61B2090/0481 ,  A61B2562/164 ,  G01T1/24 ,  G01T1/244 ,  G03B42/042 ,  G03B42/047 ,  G21F1/026 ,  G21F1/08 ,  G21F1/085 ,  H01J37/244 ,  H01J37/3045 ,  H01L27/14601 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14658 ,  H01L27/14806 ,  H01L27/14818

摘要： Systems, devices, and methods are described for providing, among other things, an intra-oral x-ray imaging system configured to reduce patient exposure to x-rays, reduce amount of scatter, transmission, or re-radiation during imaging, or improve x-ray image quality. In an embodiment, an intra-oral x-ray imaging system includes an intra-oral x-ray sensor configured to communicate intra-oral x-ray sensor position information or intra-oral x-ray sensor orientation information to a remote x-ray source.