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    Pixel-array substrate and associated method
    3.
    发明授权
    Pixel-array substrate and associated method 有权

    公开(公告)号：US11784206B2

    公开(公告)日：2023-10-10

    申请号：US17080780

    申请日：2020-10-26

    申请人： OmniVision Technologies, Inc.

    发明人： Hui Zang ,  Gang Chen

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/14812

    摘要： A pixel-array substrate includes a floating diffusion region and a first photodiode formed in a semiconductor substrate. A top surface of the semiconductor substrate defines a trench 1A and a trench 1B each (i) extending into the semiconductor substrate away from a planar region of the top surface between the trench 1A and the trench 1B and (ii) having a respective distal end, with respect to the floating diffusion region, located between the floating diffusion region and the first photodiode. In a horizontal plane parallel to the top surface and along an inter-trench direction between the trench 1A and the trench 1B, a first spatial separation between the trench 1A and the trench 1B increases with increasing distance from the floating diffusion region.

    SOLID-STATE IMAGING APPARATUS AND ELECTRONIC DEVICE
    6.
    发明申请
    SOLID-STATE IMAGING APPARATUS AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20180166480A1

    公开(公告)日：2018-06-14

    申请号：US15889699

    申请日：2018-02-06

    申请人： Sony Corporation

    发明人： Mikiko Kobayashi ,  Kazuyoshi Yamashita

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14612 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14812

    摘要： Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.

    METHOD OF FORMING A SHALLOW PINNED PHOTODIODE
    8.
    发明申请
    METHOD OF FORMING A SHALLOW PINNED PHOTODIODE 审中-公开

    公开(公告)号：US20170250217A1

    公开(公告)日：2017-08-31

    申请号：US15595356

    申请日：2017-05-15

    申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    发明人： Eric G. STEVENS

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14643 ,  H01L21/2255 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14689 ,  H01L27/14806 ,  H01L27/14812 ,  H01L27/14831

    摘要： An image sensor with a pinned photodiode includes a photodiode formed in a substrate by implanting dopants of a first type through one or more dielectric layers formed over the substrate. A pinning layer for the photodiode may be formed by implanting dopants of a second type through the same one or more dielectric layers. The pinning layer may be formed over a photodiode region of the substrate. The concentration of dopants of the second type may have a maximum value in dielectric layers over the photodiode that exceeds the concentration of dopants of the second type in the substrate below. The photodiode and pinning layer may both be formed by implanting ions of the first and second type respectively through a dielectric layer formed after etching away a portion of another dielectric layer, having a different thickness, and having different optical transmission properties than the another dielectric layer.

    IMAGE SENSOR
    9.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20170221946A1

    公开(公告)日：2017-08-03

    申请号：US15488691

    申请日：2017-04-17

    申请人： STMicroelectronics (Crolles 2) SAS

    发明人： Francois Roy ,  Philippe Are

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14812

    摘要： An image sensor includes a control circuit and pixels. Each pixel includes: a photosensitive area, a substantially rectangular storage area adjacent to the photosensitive area, and a read area. First and second insulated vertical electrodes electrically connected to each other are positioned opposite each other and delimit the storage area. The first electrode extends between the storage area and the photosensitive area. The second electrode includes a bent extension opposite a first end of the first electrode, with the storage area emerging onto the photosensitive area on the side of the first end. The control circuit operates to apply a first voltage to the first and second electrodes to perform a charge transfer, and a second voltage to block charge transfer.