公开(公告)号：US12120897B2

公开(公告)日：2024-10-15

申请号：US17424582

申请日：2020-01-21

申请人： SONY GROUP CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Takushi Shigetoshi ,  Hideaki Togashi ,  Junpei Yamamoto ,  Shinpei Fukuoka ,  Moe Takeo ,  Sho Nishida

IPC分类号： H10K39/32

CPC分类号： H10K39/32

摘要： A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.

公开(公告)号：US12027565B2

公开(公告)日：2024-07-02

申请号：US17733809

申请日：2022-04-29

申请人： SONY GROUP CORPORATION

发明人： Hideaki Togashi ,  Fumihiko Koga ,  Tetsuji Yamaguchi ,  Shintarou Hirata ,  Taiichiro Watanabe ,  Yoshihiro Ando ,  Toyotaka Kataoka ,  Satoshi Keino ,  Yukio Kaneda

IPC分类号： H01L27/148 ,  H01L27/146 ,  H10K30/30 ,  H10K30/82 ,  H10K39/32

CPC分类号： H01L27/14812 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H10K30/353 ,  H10K30/82 ,  H10K39/32

摘要： An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

公开(公告)号：US11862655B2

公开(公告)日：2024-01-02

申请号：US17374586

申请日：2021-07-13

申请人： SONY GROUP CORPORATION

发明人： Hideaki Togashi

IPC分类号： H01L27/146 ,  H01L23/48 ,  H01L21/768 ,  H04N25/77 ,  H04N25/79 ,  H04N25/75

CPC分类号： H01L27/14636 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14647 ,  H04N25/77 ,  H04N25/79 ,  H01L21/7682 ,  H01L2924/0002 ,  H04N25/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.

公开(公告)号：US12027542B2

公开(公告)日：2024-07-02

申请号：US17053216

申请日：2019-04-19

申请人： SONY GROUP CORPORATION

发明人： Masahiro Joei ,  Kenichi Murata ,  Fumihiko Koga ,  Iwao Yagi ,  Shintarou Hirata ,  Hideaki Togashi ,  Yosuke Saito

IPC分类号： H01L27/146 ,  H01L29/41 ,  H04N25/771 ,  H10K39/32

CPC分类号： H01L27/14612 ,  H01L27/14636 ,  H01L27/14685 ,  H01L29/41 ,  H04N25/771 ,  H10K39/32

摘要： A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided. There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided stacked with the first photoelectric conversion unit and including a plurality of pixel transistors, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor made of an oxide semiconductor layer.

公开(公告)号：US12028612B2

公开(公告)日：2024-07-02

申请号：US17638318

申请日：2020-09-03

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION ,  SONY GROUP CORPORATION

发明人： Yusuke Murakawa ,  Hideaki Togashi ,  Yoshito Nagashima ,  Akira Furukawa ,  Yoshihiro Ando ,  Yasumasa Akutagawa ,  Taku Minoda ,  Hiroki Iwashita ,  Takahito Niwa ,  Sho Nishida ,  Mikio Ishimaru

IPC分类号： H04N23/67 ,  H01L27/146 ,  H04N25/704

CPC分类号： H04N23/672 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/1463 ,  H04N25/704

摘要： An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.

公开(公告)号：US11901382B2

公开(公告)日：2024-02-13

申请号：US17539956

申请日：2021-12-01

申请人： SONY GROUP CORPORATION

发明人： Akira Furukawa ,  Yoshihiro Ando ,  Hideaki Togashi ,  Fumihiko Koga

IPC分类号： H01L27/146 ,  H04N23/45 ,  H04N23/55 ,  H10K39/32 ,  H10K30/81 ,  H10K30/30

CPC分类号： H01L27/14614 ,  H01L27/1464 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14647 ,  H04N23/45 ,  H04N23/55 ,  H10K30/30 ,  H10K30/81 ,  H10K39/32 ,  Y02E10/549

摘要： Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nth photoelectric conversion unit segment is formed of an nth charge storage electrode segment, an nth insulating layer segment and an nth photoelectric conversion layer segment. As n increases, the nth photoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nth photoelectric conversion unit segment.