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1.
公开(公告)号:US20240297016A1
公开(公告)日:2024-09-05
申请号:US18662669
申请日:2024-05-13
IPC分类号: H01J37/304 , H01J37/20
CPC分类号: H01J37/304 , H01J37/20 , H01J2237/201
摘要: A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.
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公开(公告)号:US20240258068A1
公开(公告)日:2024-08-01
申请号:US18522313
申请日:2023-11-29
发明人: Josef Biberger
IPC分类号: H01J37/304 , H01J37/22 , H01J37/28
CPC分类号: H01J37/3045 , H01J37/222 , H01J37/28 , H01J2237/20214 , H01J2237/24578
摘要: The invention relates to a method for determining a position of an object in a beam apparatus which has a processor unit and which is used for processing, imaging and/or analyzing an object. The method has the following steps: (i) providing firstly a predefinable region of an object and secondly a marking in the beam apparatus, wherein the predefinable region has a first position in relation to the marking, and wherein the first position is given by a first distance and a second distance; (ii) rotating the object or rotating a capture device of the beam apparatus; (iii) determining a further second distance; and (iv) determining a second position of the predefinable region of the object in relation to the marking using the first distance, the second distance and the further second distance.
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公开(公告)号:US20240242931A1
公开(公告)日:2024-07-18
申请号:US18004018
申请日:2022-04-26
发明人: Haruyuki NOMURA
IPC分类号: H01J37/304 , H01J37/317
CPC分类号: H01J37/304 , H01J37/3177 , H01J2237/24507 , H01J2237/24585
摘要: According to one aspect of the present invention, a multiple charged particle beam writing includes: a dose representative value calculator unit configured to calculate, for each divided mesh region, a representative value of a plurality of doses of a plurality of beams with which an inside of the mesh region is irradiated as a dose representative value; a calculation processing unit configured to perform a calculation process of a rising temperature given to a mesh region of interest being one of the plurality of mesh regions by heat due to beam irradiation to each of the plurality of mesh regions in a processing region corresponding to the beam array region, the calculation process being performed by a convolution process using the dose representative value for each of the plurality of mesh regions and a thermal spread function representing thermal spread generated by the plurality of mesh regions; an effective temperature calculator unit configured to perform a repetitive process of repeating the calculation process while shifting a position of the processing region in the second direction on the stripe region and to calculate, as an effective temperature of the mesh region of interest, a representative value of a plurality of the rising temperatures obtained by performing the repetitive process a plurality of times until the mesh region of interest reaches, from one end of the processing region in the second direction, the other end; and a dose corrector unit configured to correct, using the effective temperature, doses of a plurality of beams with which each mesh region of interest is irradiated.
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4.
公开(公告)号:US20240221970A1
公开(公告)日:2024-07-04
申请号:US18004864
申请日:2021-07-01
申请人: UNIVERSITE D’AIX MARSEILLE , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , UNIVERSITE DE TOULON
发明人: Wilfried Vervisch
IPC分类号: G21K5/04 , G21K1/10 , H01J37/304
CPC分类号: G21K5/04 , G21K1/10 , H01J37/304 , H01J2237/24507
摘要: This method for manufacturing an irradiating head includes:—providing a gun emitting a primary beam of charged particles along a propagation axis, this primary beam having a spatial distribution of charged particles having a median density Dmed1 of charged particles located at a distance d1 from the propagation axis,—the design and manufacture of a sensor capable of measuring the intensity of a beam of charged particles, this sensor comprising:—an outlet face by means of which a secondary beam of charged particles results having a spatial distribution having a median density Dmed2 of charged particles, this median density Dmed2 being located at a distance d2 from the propagation axis, and—a semiconductor layer. The design of the sensor includes selecting a thickness for the semiconductor layer, wherein the distance d2 is twice as large as the distance d1.
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公开(公告)号:US20240194444A1
公开(公告)日:2024-06-13
申请号:US18524043
申请日:2023-11-30
发明人: Moriz Jelinek , Axel König , Bernhard Leitl
IPC分类号: H01J37/317 , H01J37/304
CPC分类号: H01J37/3171 , H01J37/304 , H01J2237/24405 , H01J2237/24528 , H01J2237/24535 , H01J2237/31703
摘要: An ion beam current measurement device includes a first Faraday cup having a first ion beam entrance slit of a first width W1. The first Faraday cup is configured to generate a first current signal. The device further includes a second Faraday cup having a second ion beam entrance slit of a second width W2. The second Faraday cup is configured to generate a second current signal. The slit widths are designed such that W2 is greater than W1.
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公开(公告)号:US12009177B2
公开(公告)日:2024-06-11
申请号:US17171939
申请日:2021-02-09
发明人: Ya-Chin King , Chrong-Jung Lin , Burn-Jeng Lin , Chien-Ping Wang , Shao-Hua Wang , Chun-Lin Chang , Li-Jui Chen
IPC分类号: H01J37/304 , G03F7/00 , H01J37/30 , H01L27/144 , H01L31/02 , H01L31/113 , H01L31/18
CPC分类号: H01J37/304 , G03F7/70516 , G03F7/7055 , G03F7/70616 , H01J37/3002 , H01L27/1446 , H01L31/02005 , H01L31/1136 , H01L31/18
摘要: A method includes applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detector unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detector unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.
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公开(公告)号:US12002656B2
公开(公告)日:2024-06-04
申请号:US18230722
申请日:2023-08-07
发明人: Andreas Schmaunz
IPC分类号: H01J37/32 , H01J37/145 , H01J37/244 , H01J37/28 , H01J37/304
CPC分类号: H01J37/32449 , H01J37/145 , H01J37/244 , H01J37/28 , H01J37/304 , H01J2237/006 , H01J2237/2065
摘要: Operating a gas feed device for a particle beam apparatus includes predetermining a flow rate of a precursor through an outlet of a precursor reservoir containing the precursor to be fed onto an object, loading a temperature of the precursor reservoir, the temperature being associated with the predetermined flow rate, from a database into a control unit, setting a temperature of the precursor reservoir to the temperature loaded from the database using a temperature setting unit, and determining at least one functional parameter of the precursor reservoir depending on the flow rate and the temperature, loaded from the database, using the control unit and informing a user of the gas feed device about the determined functional parameter. Informing the user of the gas feed device about the functional parameter may include displaying the functional parameter on a display unit, outputting an optical signal, or outputting an acoustic signal.
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公开(公告)号:US11923168B2
公开(公告)日:2024-03-05
申请号:US17937510
申请日:2022-10-03
申请人: FIBICS INCORPORATED
IPC分类号: H01J37/22 , H01J37/26 , H01J37/28 , H01J37/30 , H01J37/304 , H01J37/305
CPC分类号: H01J37/26 , H01J37/222 , H01J37/28 , H01J37/3005 , H01J37/304 , H01J37/3045 , H01J37/3056 , G06T2207/10061 , H01J2237/226 , H01J2237/2811 , H01J2237/3174 , H01J2237/31749
摘要: A method to compensate for drift while controlling a charged particle beam (CPB) system having at least one charged particle beam controllable in position. Sources of drift include mechanical variations in the stage supporting the sample, beam deflection shifts, and environmental impacts, such as temperature. The method includes positioning a sample supported by a stage in the CPB system, monitoring a reference fiducial on a surface of the sample from a start time to an end time, determining a drift compensation to compensate for a drift that causes an unintended change in the position of a first charged particle beam relative to the sample by a known amount over a period of time based on a change in the position of the reference fiducial between the start time and the end time, and adjusting positions of the first charged particle beam by applying the determined drift compensation during an operation of the CPB system.
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公开(公告)号:US11894214B2
公开(公告)日:2024-02-06
申请号:US17972292
申请日:2022-10-24
申请人: KLA CORPORATION
IPC分类号: H01J37/22 , H01J37/28 , H01J37/304 , G01N23/2251 , H01L21/66 , G06N20/00
CPC分类号: H01J37/304 , G01N23/2251 , G06N20/00 , H01J37/222 , H01L22/12 , H01J2237/221 , H01J2237/24475
摘要: Embodiments may include methods, systems, and apparatuses for correcting a response function of an electron beam tool. The correcting may include modulating an electron beam parameter having a frequency; emitting an electron beam based on the electron beam parameter towards a specimen, thereby scattering electrons, wherein the electron beam is described by a source wave function having a source phase and a landing angle; detecting a portion of the scattered electrons at an electron detector, thereby yielding electron data including an electron wave function having an electron phase and an electron landing angle; determining, using a processor, a phase delay between the source phase and the electron phase, thereby yielding a latency; and correcting, using the processor, the response function of the electron beam tool using the latency and a difference between the source wave function and the electron wave function.
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公开(公告)号:US11869746B2
公开(公告)日:2024-01-09
申请号:US16929395
申请日:2020-07-15
发明人: Hiroshi Matsumoto , Yasuo Kato
IPC分类号: H01J37/317 , H01J37/304
CPC分类号: H01J37/3177 , H01J37/3045 , H01J2237/30461 , H01J2237/31764
摘要: In one embodiment, a multi-beam writing method is for irradiating each of pixels defined on a substrate, placed on a stage, with each beam of a multi-beam to form a pattern. The method includes obtaining a position correction amount of the pattern by each of a plurality of sub-arrays into which an array of the multi-beam is divided at least in a predetermined direction, based on the positional deviation amount of each beam of each of the sub-arrays, which obtained by dividing an array of the multi-beam at least in the predetermined direction, calculating an dose of the each beam irradiated to each pixel for shifting the position of the pattern drawn for each of the sub-arrays based on the position correction, and performing multi-writing using at least a portion of each two or more of the sub-arrays with the calculated dose.
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