- 专利标题: APPARATUS AND TECHNIQUES FOR SUBSTRATE PROCESSING USING INDEPENDENT ION SOURCE AND RADICAL SOURCE
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申请号: US18662669申请日: 2024-05-13
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公开(公告)号: US20240297016A1公开(公告)日: 2024-09-05
- 发明人: Anthony RENAU , Joseph C. OLSON , Peter F. KURUNCZI
- 申请人: APPLIED Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED Materials, Inc.
- 当前专利权人: APPLIED Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01J37/304
- IPC分类号: H01J37/304 ; H01J37/20
摘要:
A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.
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