公开(公告)号：US20240194444A1

公开(公告)日：2024-06-13

申请号：US18524043

申请日：2023-11-30

申请人： Infineon Technologies AG

发明人： Moriz Jelinek ,  Axel König ,  Bernhard Leitl

IPC分类号： H01J37/317 ,  H01J37/304

CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24535 ,  H01J2237/31703

摘要： An ion beam current measurement device includes a first Faraday cup having a first ion beam entrance slit of a first width W1. The first Faraday cup is configured to generate a first current signal. The device further includes a second Faraday cup having a second ion beam entrance slit of a second width W2. The second Faraday cup is configured to generate a second current signal. The slit widths are designed such that W2 is greater than W1.

公开(公告)号：US09564292B2

公开(公告)日：2017-02-07

申请号：US14314448

申请日：2014-06-25

申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.

发明人： Noriyasu Ido ,  Kouji Inada ,  Kazuhiro Watanabe

IPC分类号： H01J37/304 ,  H01J37/317 ,  H01J37/244

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24535

摘要： An ion beam measuring device includes: a mask that is used for shaping an original ion beam into a measuring ion beam including a y beam part elongated in a y direction that is perpendicular to a traveling direction of the ion beam and an x beam part elongated in an x direction that is perpendicular to the traveling direction and the y direction; a detection unit that is configured to detect an x-direction position of the y beam part and a y-direction position of the x beam part; and a beam angle calculating unit that is configured to calculate an x-direction beam angle using the x-direction position and a y-direction beam angle using the y-direction position.

摘要翻译： 一种离子束测量装置，包括：掩模，其用于将原始离子束成形为测量离子束，所述测量离子束包括垂直于离子束的行进方向的ay方向延长的ay光束部分和在垂直于离子束的行进方向延伸的x光束部分 x方向垂直于行进方向和y方向; 检测单元，被配置为检测所述y光束部分的x方向位置和所述x光束部分的y方向位置; 以及射束角计算单元，被配置为使用y方向位置来计算x方向射束角度，并且使用y方向位置来计算y方向射束角度。

公开(公告)号：US20160189926A1

公开(公告)日：2016-06-30

申请号：US14978120

申请日：2015-12-22

申请人： Axcelis Technologies, Inc.

发明人： Andy M. Ray ,  Edward C. Eisner ,  Bo H. Vanderberg

IPC分类号： H01J37/304 ,  H01J37/317

CPC分类号： H01J37/304 ,  H01J37/3171 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30483 ,  H01J2237/31703

摘要： An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.

摘要翻译： 提供离子注入系统和方法，其中离子束被调谐到第一处理配方。 沿着扫描平面以第一频率扫描离子束，限定第一扫描离子束。 光束成像设备通过第一扫描离子束平移，并且跨越第一扫描离子的宽度测量第一扫描离子束的一个或多个特性，从而限定与第一扫描离子束相关联的第一光束轮廓。 然后以第二频率扫描离子束，从而限定第二扫描离子束，其中第二频率小于第一频率。 至少部分地基于第一光束轮廓确定与第二扫描离子束相关联的第二光束轮廓。 随后通过第二扫描离子束将离子植入工件。

公开(公告)号：US20160074003A1

公开(公告)日：2016-03-17

申请号：US14786098

申请日：2014-04-16

申请人： KONINKLIJKE PHILIPS N.V.

发明人： DIRK MANKE ,  CHRISTOPH KURZE ,  RICHARD JOHANNUS MARIA VAN DE VEN

IPC分类号： A61B6/00 ,  A61B6/08

CPC分类号： A61B6/587 ,  A61B6/0492 ,  A61B6/08 ,  A61B6/4405 ,  A61B6/461 ,  A61B6/547 ,  A61B6/585 ,  A61N5/1048 ,  A61N2005/105 ,  G02B7/005 ,  G02B27/64 ,  H01J37/22 ,  H01J2237/1501 ,  H01J2237/20292 ,  H01J2237/24528 ,  H01J2237/2482 ,  H04B10/22

摘要： The present invention relates to acquisition of medical image information of an object. In order to provide a user-friendly alignment of X-ray tube (18) and a detector (24), optionally combined with an anti-scatter grid, an alignment arrangement (200) is proposed, which comprises a tube attachment (26) with a first light projection device (28) and a detector attachment (34) with a second light projection device (36). The first and second light projection devices each generate a light pattern (30, 38) on a projection surface (32). The tube attachment (26) and the detector attachment (34) can be brought into a correct spatial arrangement relative to each other by bringing the first light pattern in a predetermined spatial relation with the second light pattern (38) on the projection surface.

摘要翻译： 本发明涉及获取对象的医学图像信息。 为了提供X射线管（18）和检测器（24）的用户友好的对准，任选地与防散射格栅组合，提出了一种对准装置（200），其包括管附件（26） 具有第一光投射装置（28）和具有第二光投射装置（36）的检测器附件（34）。 第一和第二光投射装置各自在投影表面（32）上产生光图案（30,38）。 通过使第一光图案与投影表面上的第二光图案（38）成预定的空间关系，可以使管附件（26）和检测器附件（34）相对于彼此进行正确的空间排列。

公开(公告)号：US20150262787A1

公开(公告)日：2015-09-17

申请号：US14656132

申请日：2015-03-12

申请人： SEN Corporation

发明人： Haruka Sasaki ,  Kazuhiro Watanabe ,  Hiroyuki Kariya

IPC分类号： H01J37/244 ,  H01J37/147 ,  H01J37/317

CPC分类号： H01J37/244 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/31703

摘要： A beam energy measuring device in an ion implanter includes a parallelism measuring unit that measures a parallelism of an ion beam at a downstream of a beam collimator of the ion implanter and an energy calculating unit that calculates an energy of the ion beam from the measured parallelism. The ion implanter may further include a control unit that controls a high energy multistage linear acceleration unit based on the measured energy of the ion beam so that the ion beam has a target energy.

摘要翻译： 离子注入机中的光束能量测量装置包括平行度测量单元，其测量在离子注入机的光束准直器的下游处的离子束的平行度，以及能量计算单元，其计算来自所测量的平行度的离子束的能量 。 离子注入机还可以包括控制单元，其基于所测量的离子束的能量来控制高能量多级线性加速单元，使得离子束具有目标能量。

公开(公告)号：US20140106521A1

公开(公告)日：2014-04-17

申请号：US14104289

申请日：2013-12-12

申请人： Panasonic Corporation

发明人： Kenji YONEDA

IPC分类号： H01L21/265

CPC分类号： H01L21/26513 ,  H01J2237/20207 ,  H01J2237/24528 ,  H01J2237/31701 ,  H01L21/26586 ,  H01L21/68764 ,  H01L21/68771 ,  H01L29/045 ,  H01L29/6656 ,  H01L29/6659

摘要： Provided is a method for manufacturing a semiconductor device which includes, on a wafer which has a notch, a plurality of transistors parallel with and perpendicular to a notch direction extending between the center of the wafer and the notch, the method including: preparing the wafer having the front surface which has Off angle of at least 2 degrees and at most 2.8 degrees from plane in a direction in which Twist angle relative to the notch direction is at least 12.5 degrees and at most 32.5 degrees; and doping impurities into the front surface of the wafer in a direction perpendicular to the front surface.

摘要翻译： 本发明提供一种制造半导体器件的方法，该半导体器件在具有凹口的晶片上包括与在晶片的中心和凹口之间延伸的切口方向平行并垂直的多个晶体管，该方法包括：准备晶片 其前表面在相对于切口方向的扭转角至少为12.5度且至多32.5度的方向上具有至少2度且至多2.8度的Off角度; 并且在垂直于前表面的方向上将杂质掺杂到晶片的前表面。

公开(公告)号：US08691700B2

公开(公告)日：2014-04-08

申请号：US13223977

申请日：2011-09-01

申请人： John J. Hautala ,  Michael Graf

发明人： John J. Hautala ,  Michael Graf

IPC分类号： H01L21/302

CPC分类号： H01L21/31122 ,  H01J2237/24528 ,  H01L21/32136

摘要： A method of etching a substrate is described. In one embodiment, the method includes preparing a mask layer having a pattern formed therein on or above at least a portion of a substrate, etching a feature pattern into the substrate from the pattern in the mask layer using a gas cluster ion beam (GCIB), and controlling a sidewall profile of the feature pattern etched into the substrate by adjusting a beam divergence of the GCIB.

摘要翻译： 描述蚀刻衬底的方法。 在一个实施方案中，该方法包括制备其中在基底的至少一部分上或之上形成的图案的掩模层，使用气体簇离子束（GCIB）从掩模层中的图案将特征图案蚀刻到衬底中， 并且通过调整GCIB的光束发散度来控制蚀刻到衬底中的特征图案的侧壁轮廓。

公开(公告)号：US20130327938A1

公开(公告)日：2013-12-12

申请号：US13915725

申请日：2013-06-12

申请人： JEOL Ltd.

发明人： Yuji Kohno

IPC分类号： H01J37/22

CPC分类号： H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0206 ,  H01J2237/0209 ,  H01J2237/06341 ,  H01J2237/24514 ,  H01J2237/24528 ,  H01J2237/2801 ,  H01J2237/2826

摘要： An electron microscope is offered which has a detector and a noise canceling circuit whose offset can be easily adjusted if any information about the offset of the detector is not available. Also, a method of adjusting this microscope is offered. The method of adjusting the electron microscope (1) starts with measuring the output voltage from a preamplifier (20) at given timing while blocking the electron beam transmitted through a sample (14) from hitting the detector (15) (step S140). An offset voltage to be set into the noise canceling circuit (30) is calculated based on the measured output voltage from the preamplifier (20) (step S150). The calculated offset voltage is set into the noise canceling circuit (30) (step S160).

摘要翻译： 提供具有检测器和噪声消除电路的电子显微镜，如果没有关于检测器的偏移的信息不可用，则可以容易地调整其偏移。 此外，还提供了一种调整该显微镜的方法。 调整电子显微镜（1）的方法从在给定时刻测量来自前置放大器（20）的输出电压开始，同时阻挡透过样品（14）的电子束撞击检测器（15）（步骤S140）。 基于来自前置放大器（20）的测量输出电压计算要设置到噪声消除电路（30）中的偏移电压（步骤S150）。 将计算出的偏移电压设定在噪声消除电路（30）中（步骤S160）。

公开(公告)号：US08309938B2

公开(公告)日：2012-11-13

申请号：US12568781

申请日：2009-09-29

申请人： Thomas A. Pandolfi

发明人： Thomas A. Pandolfi

IPC分类号： H01J37/08

CPC分类号： H01J37/317 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24528

摘要： In an ion implanter, a detector assembly is employed to monitor the ion beam current and incidence angle at the location of the work piece or wafer. The detector assembly includes a plurality of pairs of current sensors and a blocker panel. The blocker panel is disposed a distance away from the sensors to allow certain of the beamlets that comprise the ion beam to reach the sensors. Each sensor in a pair of sensors measures the beam current incident thereon and the incident angle is calculated using these measurements. In this manner, beam current and incidence angle variations may be measured at the work piece site and be accommodated for, thereby avoiding undesirable beam current profiles.

摘要翻译： 在离子注入机中，使用检测器组件来监测工件或晶片位置处的离子束电流和入射角。 检测器组件包括多对电流传感器和阻挡面板。 阻挡板与传感器隔开一段距离，以允许包含离子束的某些子束到达传感器。 一对传感器中的每个传感器测量入射在其上的束流，并且使用这些测量来计算入射角。 以这种方式，可以在工件位置处测量束电流和入射角变化，并且被容纳，从而避免不期望的束电流分布。

公开(公告)号：US20120181443A1

公开(公告)日：2012-07-19

申请号：US13428682

申请日：2012-03-23

申请人： Benjamin B. RIORDON ,  Nicholas P.T. Bateman ,  William T. Weaver ,  Russell J. Low

发明人： Benjamin B. RIORDON ,  Nicholas P.T. Bateman ,  William T. Weaver ,  Russell J. Low

IPC分类号： G01T1/17

CPC分类号： H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/266 ,  H01L31/0288 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.

摘要翻译： 在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。 离子电流测量装置通过离子束平移。 使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。 以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。