公开(公告)号：US08756021B2

公开(公告)日：2014-06-17

申请号：US12912312

申请日：2010-10-26

申请人： Russell J. Low ,  Kevin M. Daniels ,  Bon-Woong Koo ,  Richard M. White ,  James W. Blanchette

发明人： Russell J. Low ,  Kevin M. Daniels ,  Bon-Woong Koo ,  Richard M. White ,  James W. Blanchette

IPC分类号： G01B3/44

CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J37/242 ,  H01J2237/304

摘要： A method of controlling operation of an indirectly-heated cathode (IHC) ion source includes a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method includes receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.

摘要翻译： 控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率 。 确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。 另一种方法包括：在第一配置中接收用于阴极操作的最小源偏置功率值，测量第一配置中阴极的源极偏置功率的降低率，以及基于最小源计算阴极的寿命 偏置功率和源偏置功率的降低率。

公开(公告)号：US08455760B2

公开(公告)日：2013-06-04

申请号：US12983706

申请日：2011-01-03

申请人： Russell J. Low ,  Kasegn Tekletsadik ,  Anthony Renau ,  Piotr R. Lubicki ,  D. Jeffrey Lischer ,  Steve Krause ,  Eric Hermanson ,  Doug E. May

发明人： Russell J. Low ,  Kasegn Tekletsadik ,  Anthony Renau ,  Piotr R. Lubicki ,  D. Jeffrey Lischer ,  Steve Krause ,  Eric Hermanson ,  Doug E. May

IPC分类号： H01R4/02

CPC分类号： H05H7/00 ,  H01B17/66 ,  H01J37/241 ,  H01J37/3171 ,  H01J2237/038

摘要： Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.

摘要翻译： 公开了在高电压环境中部分接口的相关结构的方法。 一种方法包括：提供第一部分和第二部分; 以及接合所述第一部分和所述第二部分以在所述第一部分和所述第二部分之间的界面的第一外部范围处形成第一基本为零的电场区域，以及在所述界面的不同部分中的减小的电场区域。

公开(公告)号：US08164068B2

公开(公告)日：2012-04-24

申请号：US12845665

申请日：2010-07-28

申请人： Benjamin B. Riordon ,  Nicholas P. T. Bateman ,  William T. Weaver ,  Russell J. Low

发明人： Benjamin B. Riordon ,  Nicholas P. T. Bateman ,  William T. Weaver ,  Russell J. Low

IPC分类号： H01J37/317 ,  H01J37/244 ,  H01J3/07

CPC分类号： H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/266 ,  H01L31/0288 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.

摘要翻译： 在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。 离子电流测量装置通过离子束平移。 使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。 以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。

公开(公告)号：US08153466B2

公开(公告)日：2012-04-10

申请号：US12689605

申请日：2010-01-19

申请人： Russell J. Low ,  Julian G. Blake ,  Frank Sinclair

发明人： Russell J. Low ,  Julian G. Blake ,  Frank Sinclair

IPC分类号： H01L21/00

CPC分类号： H01L31/18 ,  C23C14/042 ,  C23C14/48

摘要： A method of fabricating a workpiece is disclosed. A material defining apertures is applied to a workpiece. A species is introduced to the workpiece through the apertures and the material is removed. For example, the material may be evaporated, may form a volatile product with a gas, or may dissolve when exposed to a solvent. The species may be introduced using, for example, ion implantation or gaseous diffusion.

摘要翻译： 公开了一种制造工件的方法。 将定义孔的材料施加到工件上。 通过孔将物质引入工件，并且去除材料。 例如，该材料可能被蒸发，可能与气体形成挥发性产物，或者当暴露于溶剂时可能会溶解。 可以使用例如离子注入或气体扩散来引入物种。

公开(公告)号：US20110180131A1

公开(公告)日：2011-07-28

申请号：US12694750

申请日：2010-01-27

申请人： James W. MULLIN ,  Russell J. Low

发明人： James W. MULLIN ,  Russell J. Low

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of implanting a substrate and the resulting apparatus are disclosed. The substrate, which may be a solar cell, is implanted with a p-type dopant. The p-type dopant may be, for example, boron, aluminum, gallium, or indium. Contacts are formed over the p-type region that is formed by the implant. An aluminum layer is formed around these contacts such that a surface of the contacts is still exposed. The implant may be a blanket implant across the entire surface of the substrate or a selective implant into a portion of the substrate. The substrate may be either n-type or p-type.

摘要翻译： 公开了一种植入衬底的方法和所得到的装置。 衬底（其可以是太阳能电池）注入p型掺杂剂。 p型掺杂剂可以是例如硼，铝，镓或铟。 触点形成在由植入物形成的p型区域上。 在这些触点周围形成铝层，使得触点的表面仍然露出。 植入物可以是穿过基底的整个表面的覆盖植入物或者选择性地植入到基底的一部分中。 衬底可以是n型或p型。

公开(公告)号：US07528391B2

公开(公告)日：2009-05-05

申请号：US11615386

申请日：2006-12-22

申请人： Russell J. Low

发明人： Russell J. Low

IPC分类号： G21K1/08

CPC分类号： H01J37/3171 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/024 ,  H01J2237/057 ,  H01J2237/31705 ,  H01J2237/31711

摘要： Techniques for reducing contamination during ion implantation is disclosed. In one particular exemplary embodiment, the techniques may be realized by an apparatus for reducing contamination during ion implantation. The apparatus may comprise a platen to hold a workpiece for ion implantation by an ion beam. The apparatus may also comprise a mask, located in front of the platen, to block the ion beam and at least a portion of contamination ions from reaching a first portion of the workpiece during ion implantation of a second portion of the workpiece. The apparatus may further comprise a control mechanism, coupled to the platen, to reposition the workpiece to expose the first portion of the workpiece for ion implantation.

摘要翻译： 公开了用于减少离子注入期间污染的技术。 在一个特定的示例性实施例中，可以通过用于减少离子注入期间的污染的装置来实现这些技术。 该装置可以包括用于通过离子束保持用于离子注入的工件的压板。 该设备还可以包括位于压板前面的掩模，以在工件的第二部分的离子注入期间阻挡离子束并且至少一部分污染物离子到达工件的第一部分。 该装置还可以包括耦合到压板的控制机构，以重新定位工件以暴露工件的第一部分用于离子注入。

公开(公告)号：US07482598B2

公开(公告)日：2009-01-27

申请号：US11567485

申请日：2006-12-06

申请人： Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

发明人： Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/09 ,  H01J37/15 ,  H01J37/18 ,  H01J37/302 ,  H01J37/3023 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/30488 ,  H01J2237/31705 ,  H01L21/266

摘要： Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.

摘要翻译： 公开了用于防止寄生子束影响离子注入的技术。 在一个特定的示例性实施例中，技术可以被实现为用于防止寄生子束影响离子注入的装置。 该装置可以包括配置成来回扫描点波束的控制器，从而形成横跨预定宽度的离子束。 该装置还可以包括孔机构，如果保持静止，则允许点束通过。 该装置还可以包括耦合到控制器和孔机构的同步机构，其被配置为使得孔径机构与扫描的点光束同步地移动，允许扫描的光束穿过但阻挡一个或多个寄生 与点光束相关的子束。

公开(公告)号：US20080073578A1

公开(公告)日：2008-03-27

申请号：US11527842

申请日：2006-09-27

申请人： Kasegn D. Tekletsadik ,  Russell J. Low

发明人： Kasegn D. Tekletsadik ,  Russell J. Low

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/09 ,  H01J37/16 ,  H01J2237/0206 ,  H01J2237/026 ,  H01J2237/038 ,  H01J2237/08

摘要： An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor. An ion implanter is also provided. The ion implanter includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulated conductor. The insulated conductor is disposed proximate an exterior portion of the terminal structure to modify an electric field about the terminal structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kV/inch disposed about a conductor.

摘要翻译： 一种装置包括导电结构和布置在导电结构的外部附近的绝缘导体，以修改围绕导电结构的电场。 绝缘导体具有介于绝缘体上的介电强度大于75千伏（kV）/英寸的导体周围。 还提供了离子注入机。 离子注入机包括被配置为提供离子束的离子源，限定空腔的端子结构，至少部分地设置在空腔内的离子源和绝缘导体。 绝缘导体设置在端子结构的外部附近以修改围绕端子结构的电场。 绝缘导体具有介于绝缘体上的介电强度大于75kV /英寸的导体周围。

公开(公告)号：US08768040B2

公开(公告)日：2014-07-01

申请号：US13006545

申请日：2011-01-14

申请人： Benjamin Riordon ,  Russell J. Low

发明人： Benjamin Riordon ,  Russell J. Low

IPC分类号： G06K9/00

CPC分类号： H01L31/0682 ,  G06K9/00577 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of identifying individual silicon substrates, and particularly solar cells, is disclosed. Every solar cell possesses a unique set of optical properties. The method identifies these properties and stores them in a database, where they can be associated to a particular solar cell. Unlike conventional tracking techniques, the present method requires no dedicated space on the surface of the silicon substrate. This method allows substrates to be tracked through the manufacturing process, as well as throughout the life of the substrate.

摘要翻译： 公开了一种识别单个硅衬底，特别是太阳能电池的方法。 每个太阳能电池都具有独特的光学特性。 该方法识别这些属性并将其存储在数据库中，并将其与特定的太阳能电池相关联。 与传统跟踪技术不同，本方法不需要硅衬底表面上的专用空间。 该方法允许通过制造过程以及在基板的整个寿命期间跟踪基板。

公开(公告)号：US08685846B2

公开(公告)日：2014-04-01

申请号：US12695729

申请日：2010-01-28

申请人： Russell J. Low ,  William T. Weaver ,  Nicholas P. T. Bateman ,  Atul Gupta

发明人： Russell J. Low ,  William T. Weaver ,  Nicholas P. T. Bateman ,  Atul Gupta

IPC分类号： H01L21/425

CPC分类号： H01L21/266 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/31711 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.

摘要翻译： 公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，该技术可以被实现为用于处理衬底的方法。 该方法可以包括离子注入在离子源的下游设置的离子，其离子在离子源中产生; 以及将掩模的第一部分设置在所述基板的前面以将所述掩模的所述第一部分暴露于所述离子，所述掩模由所述第一和第二掩模保持器支撑，所述掩模还包括缠绕在所述第一掩模保持器中的第二部分 。